2SC135 Search Results

2SC1358

Contextual Info: SavantIC Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING See Fig.2

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1359 TRANSISTOR NPN 1. EMITTER FEATURES z Optimum for RF Amplification of FM/AM Radios. z High Transition Frequency fT. 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SC1358

Abstract: TRANSISTOR HORIZONTAL NPN Transistor VCEO 1000V 2SC1520 fbt tv NPN Transistor VCEO 30A 1000V C14A triple pulse transformer horizontal transistor
Contextual Info: '> y =3 > / \ ° 7 Silicon P o w e r Transistor 2SC1358 NPN = M ÎÉ iM H t S v U 3 > h 7 > v X ^ ^3 ^ “ i r U fcfTM FUjlÉJiii^ïÆ NPN Silicon Triple Diffused Transistor Horizontal Deflection Output for Color TV 0 2 0 -i y f - 90° # ^ — r ^ O u t l i n e U n i t ! mm

2SC1359 C

Abstract: ic CD4081 pin diagram datasheet 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

2SC1359 C

Abstract: 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC1359 C

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C Collector-emitter voltage Base open Emitter-base voltage (Collector open) Collector current

2SC137

Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135

Contextual Info: Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Optimum for RF amplification of FM/AM radios • High transition frequency fT 0.7±0.2 M Di ain sc te on na

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SC1353 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)90 I(C) Max. (A)700m Absolute Max. Power Diss. (W)650m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1359

Abstract: 2SC1359 C 2SA838
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter

2SA838

Abstract: 2SA838 TRANSISTOR equivalent TRANSISTOR 2sa838 2SC1359 2SC135
Contextual Info: Transistor 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 High transition frequency fT. Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V Collector to emitter voltage

2SC1358

Abstract: 1400v npn
Contextual Info: Inchange Semiconductor Product Specification 2SC1358 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·High speed switching APPLICATIONS ·Designed for use in large screen color deflection circuits PINNING See Fig.2

2SA838

Abstract: 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm 5.0±0.2 4.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 0.7±0.2 ● • Absolute Maximum Ratings 12.9±0.5

NPN Transistor VCEO 1000V

Contextual Info: 2SC1358 NPN POWER TRANSISTOR Colour TV Horizontal Output Applications j* — B ——j o-JU UJ cc < if z O C/5 Z ÜJ 5 DIM A B C D E F G H J K L M MtN - - 6,35 0,96 - 29,90 10,69 5,20 16,64 11,15 - 3,84 MAX 39,37 22,22 8,50 1.09 1.77 30,4 11,18 5,72 17,15

Contextual Info: 2SC1354 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0mØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SC1359 C

Abstract: 2SA733 2SC1359
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SA0838 2SA838 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC1359 Unit: mm 5.0±0.2 5.1±0.2 • Features 0.7±0.2 High transition frequency fT. ■ Absolute Maximum Ratings 12.9±0.5 0.7±0.1 (Ta=25˚C)

2sc1424

Abstract: SC-5-1 2SC1457 2SC1507 2SC1324 2SC1336 2SC1345K 2SC1326 2SC1449 2SC1318A
Contextual Info: - 104 - m% * * Æ Î § Ta=25tC, ♦ EP(iTc=25‘C fi -t¡ m toi . *^fSU (V) 2SC1318A 2SC1324 2SC1326 2SC1336 2SC1342 2SC1343H 2SC1344 2SC1345 2SC1345K 2SC1359 2SC1360 2SC1360A 2SC1383 2SC1384 2SC1387 2SC1393 2SC1394 2SC1398 2SC1398A 2SC1413 2SC1413A 2SC1413AH

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA0838 2SA838 Unit: mm 5.0±0.2 Optimum for RF amplification of FM/AM radios. High transition frequency fT. • Absolute Maximum Ratings (Ta=25˚C) Parameter

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 • High transfer ratio fT 0.7±0.2 • Features ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l

2SC1507

Abstract: MS1B
Contextual Info: SEC SILICON POWER TRANSISTOR EUCTIUN DEVICE 2SC1358 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV NPN SILICON TRIPLE DIFFUSED MESA TRANSISTOR PACKAGE DIMENSIONS {Unit : mm 4,22.22MAX. • Suitable for Horizontal Deflection Output Applications o f 20", 90° Color TV Receivers.

Contextual Info: 2SC1359 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)100m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.220 h(FE) Max. Current gain.

2SC1359

Abstract: 2SC1359 C
Contextual Info: ST 2SC1359 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.