NE85600 Search Results

Contextual Info: NE85600 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)100m Absolute Max. Power Diss. (W)700m Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

LB 122 transistor To-92

Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

transistor NEC D 882 p

Abstract: transistor c 1349 Transistor BF 479 NE85630-T1-A
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

transistor NEC D 882

Abstract: 56E-18 0107 NA SILICON TRANSISTORS transistor Bf 966 XO 202 na tq55
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST DESCRIPTION

UPA802T

Abstract: BD304 NE02132
Contextual Info: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -

2SC3357

Abstract: 2sc3355 NE8563S
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • LOW COST 00 CHIP 35 (MICRO-X) DESCRIPTION f The NE856 series of NPN epitaxial silicon transistors is

NE8563S

Abstract: 2SC 2625 transistor 321 CJ 7121 SL 0380 R E8560 ic SL 1626 NE85634-F ic 7442 2sc 1027 transistor transistor 2SC 1222
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: iT = 7 G H z • LOW NOISE FIGURE: 1.1 dB at 1 G H z • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 C H IP • LOW COST

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

NE99532

Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
Contextual Info: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

UPC2712B

Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Contextual Info: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E

BJT BF 331

Abstract: NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85600 NE85618 NE85619 NE85630
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

973-120

Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST

016p

Abstract: NE85633-T1B-A NEC NE85635 transistor NEC b 882 p NEC 2501 LE 737 NE85600 mje 1303 NE AND micro-X 2SC5006 2SC5011
Contextual Info: NPN SILICON RF TRANSISTOR NE856 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 00 CHIP

MJE 1532

Abstract: transistor bf 760 sot-89 Marking LB 931 NE85630 NE85635 packaging schematic NE AND micro-X NEC NE85635 2SC4226 2SC5006 2SC5011
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST

BA 5982

Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X

uPA63

Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening

NE856

Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e

SMD M05 sot

Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Contextual Info: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial

NEC NE85635

Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is