NE894 Search Results

5E12

Contextual Info: NONLINEAR MODEL SCHEMATIC NE894M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.3 nH LCPKG 0.05 nH Collector Base CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC 0.24

kf 13002

Abstract: 2SC5787 TRANSISTOR 9642 NE894M13 NE894M13-A NE894M13-T3-A S21E rf npn power transistor c 10-12 ghz s-1125
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05

TRANSISTOR 9642

Abstract: transistor s11 s12 s21 s22
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

PARAMETERS

Abstract: ne894m03 65E-12
Contextual Info: NONLINEAR MODEL NE894M03 CCBPKG SCHEMATIC 0.35 pF CCB 0.12 pF LBPKG LB 0.55 nH 0.01 nH Base LCPKG 0.60 nH Collector CCE Q1 0.18 pF LE 0.01 nH CCEPKG 0.07 pF LEPKG 0.95 nH CBEPKG 0.005 pF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 100e-18

C 5478 transistor

Abstract: 12205 transistor RF TRANSISTOR K 2191 IC AT 6884 transistor 7929 TRANSISTOR NPN 6822
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

KF 13002 F

Abstract: TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13 NE894M13-A NE894M13-T3-A S21E Q1 k 1821
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low

kf 13002

Abstract: TRANSISTOR 9642 mje 3055 KF 13002 F 2SC5787 NE894M13 S21E transistor BR 13002
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05

Contextual Info: NPN SILICON RF TRANSISTOR NE894M13 / 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Ideal for 3 GHz or higher OSC applications • Low noise, high gain fT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz

transistor c 6073

Abstract: 0809 af kf 982 c 4235 transistor npn BF 6591 2SC5786 BJT BF 331 SiS 671 AN1026 NE894M03
Contextual Info: NEC's NPN SILICON TRANSISTOR NE894M03 FEATURES • OUTLINE DIMENSIONS Units in mm MINIATURE M03 PACKAGE: – Small transistor outline – Low profile / 0.59 mm package height – Flat lead style for better RF performance • IDEAL FOR > 3 GHz OSCILLATORS

kf 13002

Abstract: TRANSISTOR 9642 KF 13002 F NE894M13 transistor k 2723 2SC5787 S21E transistor x 13002 mje 3055 transistor bf 393
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline – 1.0 X 0.5 X 0.5 mm – Low profile / 0.50 mm package height – Flat lead style for better RF performance

Transistor NEC K 3654

Abstract: transistor on 4409 3019 Transistor NEC k 3654
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: C1 E1 6 5 2 C2 3 B1 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

NF024

Abstract: transistor on 4409 Transistor NEC K 3654 NE687 S21E UPA861TD UPA861TD-T3-A 024BF
Contextual Info: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 0.8 +0.07 -0.05 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1

marking code C1E SMD Transistor

Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

transistor on 4409

Abstract: Transistor NEC K 3654 NEC k 3654
Contextual Info: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 3 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1

UPC2712B

Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Contextual Info: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE