PARAMETERS Search Results

Contextual Info: y U IM IT R O D E UC161A UC161B UC161C • Direct CMOS Logic Compatibility • Low Power • Direct Wire-OR of Outputs The UC161 family of quad comparators feature programmable DC and AC parameters. A single external resistor can set the comparators to operate in the microwatt region for battery applications, or higher cur­

SN62088

Contextual Info: LINEAR INTEGRATED TYPES SN62Q88. SN72Q88 CHOPPER-STABILIZED OPERATIONAL AMPLIFIERS CIRCUITS B U L L E T I N N O . D L -S 7 3 1 2 0 5 1 , S E P T E M B E R 1 973 Very Low Input Offset Parameters High Slew Rates Very Low Input Bias Currents High Gain-Bandwidth Product

TL2829Z

Abstract: 31AY
Contextual Info: TL2829Z, TL2829Y HIGH-TEMPERATURE QUADRUPLE OPERATIONAL AMPLIFIERS SLOSQ67A - APRIL 1991 - REVISED MARCH 1993 Free-Air Operating Temperature Range -40°C to 150°C Low Input Bias and Offset Parameters at 25°C input Offset Voltage . . . 3 mV Typ Input Offset Current. . . 2 nA Typ

Contextual Info: SPECIFICATIONS PARAMETERS RATED INPUT POWER MAX INPUT POWER IMPEDANCE OUTPUT SPL @ 1W/1M AT 0.8, 1.0, 1.2, 1.5 kHz DISTORTION (MAX.) RESONANT FREQUENCY FREQUENCY RANGE HOUSING MATERIAL CONE MATERIAL MAGNET MATERIAL OPERATING TEMPERATURE WEIGHT VALUES UNITS

ul1571

Abstract: IP57 ul1571 AWG Omni Electronics 665-POW1644LLWC50BR 51021-0200
Contextual Info: SPECIFICATIONS PARAMETERS DIRECTIVITY SENSITIVTY STANDARD OPERATING VOLTAGE MAX OPERATING VOLTAGE CURRENT CONSUMPTION MAX IMPEDANCE SIGNAL TO NOISE RATIO (MIN.) OPERATING TEMPERATURE TERMINAL INTERNAL CAPACITOR VALUES UNITS OMNI -44 ± 3 2 10 0.5 2.2 60

Contextual Info: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS

DS4191

Contextual Info: DS2012SF MITEL @ Rectifier Diode S E M IC O N D U C T O R Supersedes August 1995 version, DS4191 - 2.3 DS4191 - 2.4 APPLICATIONS • Rectification. ■ Freewheel Diode. ■ DC Motor Control. ■ Power Supplies. March 1998 KEY PARAMETERS VRRM 6000V I F a v ,

15514

Contextual Info: SiB410DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

0066E

Abstract: 014e1
Contextual Info: NONLINEAR MODEL NE68518 SCHEMATIC Q1 CCBPKG CCB LCX LBX LB Collector LC Base CCE LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 Parameter time capacitance inductance resistance

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1

Contextual Info: IRFZ44S_RC, IRFZ44L_RC, SiHFZ44S_RC, SiHFZ44LL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFP21N60L_RC, SiHFP21N60L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: IRFIBC40G_RC, SiHFIBC40G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

60E-12

Abstract: NE68719 40E15
Contextual Info: NONLINEAR MODEL SCHEMATIC NE68719 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 8.0e-17 MJC 0.53 BF 128 XCJC 0.27 NF 1.0 CJS 0.75 VAF 17 VJS IKF 0.18 MJS ISE 3.3e-15 FC 0.37

si2366

Contextual Info: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

diode fr 307

Abstract: 5SDF0131Z0400 ABB 12 30 01 ABB 14 11 09 DC-20000
Contextual Info: PRELIMINARY 5SDF 0131Z0400 5SDF 0131Z0400 High Frequency Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications  Welding equipment  High current application up to 10 kHz Key Parameters

NE68118

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: NONLINEAR MODEL UPA844TC BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 8e-17 3.7e-17 MJC 0.53 0.18 BF 128 81 XCJC 1 0.5 NF 1 0.9944 CJS VAF 17 27.7 VJS 0.75 0.75 IKF 0.18 0.98 MJS ISE 3.3e-15 2.53e-10 FC 0.37 0.5 5e-12 NE 1.48 30 TF

Contextual Info: IRLR024_RC, IRLU024_RC, SiHLR024_RC, SiHLU024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

Contextual Info: Si4202DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFZ48R_RC, SiHFZ48R_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

14093

Abstract: 75431
Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,