IRFD014 Search Results

Contextual Info: IRFD014_RC, SiHFD014_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRFD120

Contextual Info: PD- 95920 IRFD014PbF • Lead-Free 10/27/04 Document Number: 91125 www.vishay.com 1 IRFD014PbF Document Number: 91125 www.vishay.com 2 IRFD014PbF Document Number: 91125 www.vishay.com 3 IRFD014PbF Document Number: 91125 www.vishay.com 4 IRFD014PbF Document Number: 91125

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

C289

Abstract: C285 IRFD014
Contextual Info: PD - 9.700A International XâR Rectifier IRFD014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleing Simple Drive Requirements VDSS = 60V

IRFD014

Abstract: PD-9700
Contextual Info: International Kjg Rectifier PD-9.700A IRFD014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS = 6 0 V

Contextual Info: PD- 95920 IRFD014PbF • Lead-Free 10/27/04 Document Number: 91125 www.vishay.com 1 IRFD014PbF Document Number: 91125 www.vishay.com 2 IRFD014PbF Document Number: 91125 www.vishay.com 3 IRFD014PbF Document Number: 91125 www.vishay.com 4 IRFD014PbF Document Number: 91125

IRFD014PbF

Abstract: IRFD120 P-CHANNEL
Contextual Info: PD- 95920 IRFD014PbF • Lead-Free www.irf.com 1 10/27/04 IRFD014PbF 2 www.irf.com IRFD014PbF www.irf.com 3 IRFD014PbF 4 www.irf.com IRFD014PbF www.irf.com 5 IRFD014PbF 6 www.irf.com IRFD014PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

IRFD120

Abstract: HexDIP Package HEXDIP
Contextual Info: PD- 95920 IRFD014PbF • Lead-Free 1 IRFD014PbF 2 IRFD014PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE

IRFD014

Abstract: PD-9700 PD9700
Contextual Info: PD-9.700A International E g g R e c tifie r IRFD014 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Description

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

Contextual Info: |I N R International ligi Rectifier PD-9.700A IRFD014 INTERNATIONAL RE C T IF IE R HEXFET Power MOSFET Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements bSE D

IRFD014

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

IRFD014

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

Contextual Info: IRFD014 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.7 I(DM) Max. (A) Pulsed I(D)1.2 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ

IRFD014

Abstract: S10 diode VISHAY MARKING S10 vishay body marking IRFD014
Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

IRFD014

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

MO-001

Abstract: TO-251 Outline TO-251AA
Contextual Info: International j«»|Rectifier HEXFET Power M O SFE T s Plastic Insertable Package HEXDIP N-Channel Part Number Vos Draln Source Voltage Volts IRFD015 IRFD014 IRFD025 IRFD024 60 IRFD1Z3 IRFD113 IRFD123 80 IRFD1Z0 IRFD110 IRFD120 100 IRFD213 IRF0223 IRFD210

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

Contextual Info: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGH-SPEED MOSFET DRIVERS SLVS132D – NOVEMBER 1995 – REVISED NOVEMBER 1997 D D D D D D TPS2811, TPS2812, TPS2813 . . . D, P, AND PW PACKAGES TOP VIEW Industry-Standard Driver Replacement 25-ns Max Rise/Fall Times and 40-ns Max

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
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1N2074A

Abstract: h bridge inverter using ir2112 mosfet driver power inverter schematic diagram ir2110 ic 555 timer gate drive scr inverter schematic PWM IR2112 IRF540 LN4148 full bridge ir2110 h bridge irf740 inverter h bridge ir2110 555 igbt driver IR2117
Contextual Info: APPLICATION NOTE AN978 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA HV Floating MOS-Gate Driver ICs HEXFET is a trademark of International Rectifier Topics Covered: Gate drive requirements of high side devices Block diagram of a typical MGD