2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
|
Original
|
f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
|
PDF
|
2SC2570
Abstract: 2sc2570 transistor NE02132
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
|
OCR Scan
|
ne021ne02107packageoutune33ot-23+5b42752500b5b072sc25702sc2570 transistorne02132
|
PDF
|
Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
|
OCR Scan
|
2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
|
PDF
|
SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
|
OCR Scan
|
an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
|
PDF
|
8F157
Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s
|
Original
|
ne021ne02135ne0213907/07b+9ne021338f1573fd7d76be9f795396e6f54d4430-sep-20108f157relay 3500 1210 241ne02133t1bne02133 markingne021-33amplifier micro-x "marking code" d
|
PDF
|
2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
|
Original
|
2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861
|
PDF
|
UPA802T
Abstract: BD304 NE02132
Contextual Info: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -
|
OCR Scan
|
upa800tupa801tupa802tupa806t+7upa807tupa808tupa809tupa810tot-363bd304ne02132
|
PDF
|
nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
|
Original
|
ne68018ne680upa801tcupa808tc+16upa821tcupa826tcupa861tdupa831tcupa862tdupa835tcnec b1007t79 code markingc3206marking s16marking code c1hqfn marking t88c3h markingne02107t79 markingc3206g
|
PDF
|
MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
|
OCR Scan
|
1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
|
PDF
|
73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
|
OCR Scan
|
ne46134ne85634ne46734ne85619+11ne6811973412ne64535chip transistor 348fvh 38p08cne68039ne889ne02135ne64500ne24318
|
PDF
|
NE02136
Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
|
OCR Scan
|
b427414000137sne0213l-17+10ne021362sc2570ne02135 equivalent2sc2570 transistorne02103k4272sc15602sc2351 equivalentlm5741ghz micro-x package
|
PDF
|
2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
|
OCR Scan
|
bm27414qddb354t3v-23ne021+102sc25702sc2570 transistortransistor 2sc2570ne02103ne021332sc1560ic 2sc2570ne02132ne02100ne02135
|
PDF
|
Micro-X Marking 865
Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION
|
Original
|
ne021ne02107ne2100ne02107/ne02107b+9ne02130-t1ne02133-t1bne02135ne02139-t1micro-x marking 865amplifier micro-x marking 865ne02133 markingic 1875235 micro-x package marking code f
|
PDF
|
UPC2712B
Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Contextual Info: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E
|
OCR Scan
|
get-30698ne89400upb584b10cycies+15page31ne02100page35/37upc1677p1678pupc2712bupb1509bupc2709bne85608-lne68108ne73408upb1508bne85608ne41607ne02103
|
PDF
|
|
|
s-parameter s11 s12 s21
Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s
|
Original
|
ne021ne02135ne02139ne02100+11ne02107/ne02107bne02133-t1bne02139-t1s-parameter s11 s12 s212sc2351ghz micro-x packageic 748marking k "micro xmicro-xne02107sot-23 marking code 431
|
PDF
|
JF11
Abstract: NE02133-T1B
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression
|
OCR Scan
|
ne021ne02107ot-23ne2100+4ne02107/ne02107bne02130-t1ne02133-t1bjf11
|
PDF
|
SAA 1006
Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
|
OCR Scan
|
ne021ne02107ot-23saa 1006+7si 18752k 1723ne021322sc2570 transistorsaa 1058saa 50000958k
|
PDF
|
NE02135
Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION
|
Original
|
ne021ne02107ne2100ne02107/ne02107b+11ne02133-t1bne02135ne02139-t124-hourne021 microwave oscillator2sc21492sc2351ne02100ne02133ne02139microwave transistor
|
PDF
|
transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
|
OCR Scan
|
transistor cross referencempt3n40westinghouse scr handbooklt 8224 zener diode+6sje389n9602nnpn transistor rca 467tfk 7 segment displaysput 2n6027delco 466
|
PDF
|
NE021 microwave oscillator
Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION
|
Original
|
ne021ne02107ot-2334-6393/fax+10ne021 microwave oscillator2sc2570ne02132ic 18752ic 2sc2570ne021302sc2570 transistorne02100k 17232sc4225
|
PDF
|
NE02107
Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION
|
Original
|
ne02107/07bne02100ne02107/ne02107b+10ne02133-t1bne02135ne02139-t1ne021072sc21492sc2351ne02133ne021391875260s12
|
PDF
|
NE021 microwave oscillator
Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_
|
OCR Scan
|
ne021ne02107ot-236393/fax+6ne021 microwave oscillator2sc2570si 18752xj-05transistor 2sc25701a12 nec
|
PDF
|
uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
|
OCR Scan
|
upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
|
PDF
|
transistor IR 324 C
Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
|
OCR Scan
|
ne46134ne85634ne46734ne68018-t1+2transistor ir 324 ctransistor selection guide
|
PDF
|
