000137S Search Results

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

L3840

Abstract: L5568 XL78C800 L1S24 L5760 L6240 ls376 L-1344 L6354 78c30
Contextual Info: R OHN CORP/ EXEL NELECS 3SE • 7ÖET014 0001353 'r'a b 1°1 07 M ICROELECTRONICS ExetUtnc» D fo E* S ■ REM XL78C800 Multi-Level E2PLDs PIN CO NFIGU RATIO N FEATURES ■ 600-800 Gate Equivalent Logic Com plexity 24 Pin Skinny DIP Type "P 3” Package ■

Contextual Info: YELLOW T -1 3/4 In G a A lP U ltra B rig h t LED Ultra Bright LED s High Perfo rm ance T L Y E 1 5 7 AP Product Features • InGaAlP Technology • T-13/* 5 mm Package • High Intensity Yellow Light (Xp = 590 nm) Emission | • Water Clear Lens • Narrow Radiation Pattern

HP STEP RECOVERY DIODES

Abstract: construction of varactor diode varactor diode application "Step Recovery Diode" M92A DVA6735-12 DVA6735-18 DVA6735-24 DVA6736-06 DVA6736-12
Contextual Info: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips - ALPHA INI/ S E U I C O N D U C T O R USE J 05A5443 DDQ1374 Gc14 • ALP Features ■ High Efficiency ■ High Power Handling ■ High Reliability Description Alpha A-Mode diodes are oxide passivated, epitaxial

S2026

Contextual Info: ADVANCE INFORMATION HIPPI SERIA L XMUX AND XDEMUX CIRCUITS S2026/S2027 HIPPI port. Architected and designed by Broadband Communications Products, the S2026 and S2027 of­ fer full compliance with Serial-HIPPI specifications, generating data transfer rates up to 800 Mbit/s 100