B427414 Search Results

UPB585B

Abstract: UPB585G BF08 UPB585 UPB585P VLN 2003 pm 532 "power supply"
Contextual Info: NEC/ 5bE T> CALIFORNIA NEC b427414 QGGEbOG ÔCH H N E C C ' UPB585B UPB585G UPB585P 2.5 GHz DIVIDE-BY-4 PRESCALER OUTLINE DIMENSIONS FEATURES 'T * 4 S - \0 i- i3 Units in mm OUTLINE BF08 • H IG H FREQ UENC Y OPERATION: 2.5 GHz • W ID E BAND APPLICATION: 0.5 to 2.5 GHz

ND587T-3B

Abstract: diode RU 3B n058 MONOLITHIC DIODE ARRAYS ND587R-3C ND587R-3P ND587R-3R ND587T-3P ND587T-3R 3p-01
Contextual Info: t 1SE NEC N E C / CALIFORNIA D • b427414 DDOnHS T - o i- m T G aA s S C H O T T K Y B A R R IE R D IO D E A R R A Y ND587 S E R IE S FEATURES ABSO Ll TE MAXIMUM RATINGS Ta = 25°C • MONOLITHIC ARRAYS SYMBOLS RATINGS Vr • WIDEBAND OPERATION « SMALL SIZE

ND4151-3A

Abstract: ND4151-3D
Contextual Info: N E C / CALIFORNIA 1SE D • b427414 0001=145 S SEC K-BAND SILICON MIXER-DETECTOR SCHOTTKY DIODE ND4151-3A ND4151-3D OUTLINE DIMENSIONS FEATURES Units in mm • HIGH SENSITIVITY OUTLINE 3A • LOW DRIVE LEVEL • SMALL SIZE ' 4.0 MIN. - — • LOW COST

nec d 588

Abstract: UPC1677C UPC1677 UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586
Contextual Info: E C/ CALIFORNIA SbE D b427414 DDDSbSM TÒT * N E C C NEC UPC1677B UPC1677C UPC1677P 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER =T-1H-6-Ol OUTUNE DIMENSIONS FEATURES • HIGH POWER OUTPUT + 1 9 .5 d B m Units in mm O U T U N E B08 • EXCELLENT FREQUENCY RESPONSE:

NE98203

Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
Contextual Info: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high

ND3000

Abstract: ND3138 3A ND3048 ND3049 ND3050 3A diode green T 3D 24 DIODE varactor diode high frequency GHz
Contextual Info: NEC/ CALIFORNIA 1SE D NEC b427414 Q00n02 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • H IG H C U T O F F F R E Q U E N C Y ; fc -6 = 250 G H z ND3048 fc -6 = 270 G H z ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.

2SC2037

Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Contextual Info: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable

20PM4

Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)

NE202 circuit

Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Contextual Info: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)

impatt diode

Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
Contextual Info: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

NE02136

Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Contextual Info: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

2SC4087

Abstract: 2SC4090 NE73439 NE73439B
Contextual Info: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)

2SK281

Abstract: sl2109
Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

varactor ghz

Abstract: gaas varactor diodes ND3139-5M ND3139-5N ND3139-5S GaAs varactor diode power varactor
Contextual Info: i N E C / CALIFORNIA 1SE D NEC T-oi~n b427414 O O O n Q b b MM WAVE GaAs VARACTO R D IO DE OUTLINE D IM EN SIO N S FEATURES ND3139-5S ND3139-5M ND3139-5N Units In mm O UTLINE S S • LOW C O N V ER SIO N LO SS: Lo = 7.5 dB TYP at f = 20 GHz to 40 GHz, P in = +16 dBm

impatt diode

Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

2SC3660A

Abstract: nec 2sc3660A diode gp 426 2SC3660 NEM060C69-28 NEM080C69-28 NEM080CC9-28 NEM080CM-28 4a7m1 J11J
Contextual Info: NEC/ CALIFORNIA SbE D b427414 0002550 NEC CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR 7 44 « N E C C NEM060C69-28 NEM080C69-28 OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E 69 • HIGH P O W E R A N D H IGH GAIN: Vcc = 28 V, C lass A B N EM 080C69-28: Po = 49.6 dBm, G p = 5.6 dB (TYP)

PJ 3139

Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
Contextual Info: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “

2SC1593

Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Contextual Info: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is

m28 transistor

Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Contextual Info: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z

Contextual Info: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S

2SA1424

Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Contextual Info: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and

UPB584B

Contextual Info: NEC/ CALIFORNIA 5bE D NEC b427414 GQGEST? 4*14 M N E C C UPB584B UPB584G UPB584P 2.5 GHz DIVIDE-BY-2 PRESCALER ! "T-MS-l0! -\3 OUTLINE DIMENSIONS FEATURES • HIGH FREQUENCY OPERATION: 2.5 GHz Units in mm OUTLINE BF08 • WIDE BAND APPLICATION: 0.5 to 2.5 GHz

1S1855

Abstract: diode 5f NEC 1s1855 1S1857 1S1856 snap-off diode ND1551-7F ND1561-5F ND1571-5F
Contextual Info: NEC / 1SE D CALIFORNIA NEC b427414 0001*134 V - 0 7 't f ND1 5 5 1 -7 F ND1 5 6 1 -5 F ND1 5 7 1 -5 F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES • U L T R A S H O R T R E V E R S E TU R N O N TIME Units in mm OUTLINE 5F • H IG H RELIABILITY • LO W C O S T