ND8J80W Search Results

Contextual Info: ND8J80W1T Diodes Continuous-Wave IMPATT Diode P o Min.(W) Output Power.15 Frequency Min. (Hz)70G Frequency Max. (Hz)87G Efficiency Min.4.5 V(Oper.) Nom.(V) Oper. Voltage16 I(Oper.) Typ.(A) Oper. Current160m Semiconductor MaterialSilicon Package StyleScrew

impatt diode

Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
Contextual Info: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

impatt diode

Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz