4H74
Abstract: NE68337 S21E
Contextual Info: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS
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varactor ghz
Abstract: GaAs varactor diode gaas varactor diodes ND3140-5M ND3140-5N ND3140-5S power varactor varactor diode high frequency GHz
Contextual Info: LT SE C N E C / CALIFORNIA 1SE b457414 D MM WAVE GaAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES T + 7 -/I GOOnOÔ T • LOW CONVERSION LOSS: Lo = 5 dB TYP at f = 10 GHz to 20 GHz ND3140-5S ND3140-5M ND3140-5N Units In mm OUTLINE 5S • HIG H CUTOFF FREQUENCY: fo = 240 GHz TYP
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b457414nd3140-5snd3140-5mnd3140-5n+7b427m143140-5mvaractor ghzgaas varactor diodegaas varactor diodespower varactorvaractor diode high frequency ghz
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Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Contextual Info: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
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fa4274mnd6000t-07-/snd6261+14nd6361nd6461nd6481nd6651microwave pin dioden06271sv858542a1sv36nd6361-3fnd6371-5et07 marking1sv26marking 8542a
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NEC NE85635
Abstract: 2SC3356 to 92 NE85634 NEC 2501 MF 216 TRANSISTOR NEC B77 NE85834 2sc3356 NE856 sot23 41 NE85635
Contextual Info: NEC NE C / CALIFORNIA 5 L .E J> b457414 000240^ NPN SILICON HIGH FREQUENCY TRANSISTOR 437 M N E C C NE856 S ER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH P R O D U C T : fr = 7 G H z The N E856 series of NPN epitaxial silicon transistors is
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ne856nec ne856352sc3356 to 92ne85634+6nec 2501 mf 216transistor nec b77ne858342sc3356sot23 41ne85635
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NE644
Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Contextual Info: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors
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ne644ne64-124ne6440834-6393or+42sc2272ne64400ne64480nec microwave semiconductors
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PD1712
Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Contextual Info: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich
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bm27mmdivide-by-128/136upb568upb568ha+10ipb568cpb568hajjpb568gjjpd1700/jpd1709pd1711pd1712nec sip 8pinjpb568gp8ha-254b
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NE202
Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN
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20PM4
Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)
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h42741400015bne985ne985100+3ne985200ne98540020pm4
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881-1 nec
Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S
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b4s7414g001s37ne345ne3451600+12ofsioz/sins72s22-s21s12ne345100881-1 necne345l-20bnes1417-20bcd 17821la 7687 asit 16250ne72084nes1417-10bnes1723-20b
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NE250
Abstract: NE25000 dual-gate
Contextual Info: I SEC N E C / CALIFORNIA 15E I • bM574m HIGH PERFORMANCE DUAL-GATE G aAs MESFET FEATURES • V E R Y HIGH fM Ax: 60 GHz • TWO IN DEPEN DENT G A T E S FO R DESIGN F L E X IB IL IT Y Ta = 25°C) SYM BO LS PA R A M ETER S UNITS RATINGS Vos Drain to Source Voltage
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2SC2570
Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
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bm27414qddb354t3v-23ne021+102sc25702sc2570 transistortransistor 2sc2570ne02103ne021332sc1560ic 2sc2570ne02132ne02100ne02135
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PC1675G
Abstract: 1675P
Contextual Info: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G
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al 232 nec
Abstract: NE64400 NE644 NE64408 S21E
Contextual Info: N E C / C A L IF O R N I A SbE ]> • bM2741M 0QD2417 2MD H N E C C -r r -3 l NPN SILICON HIGH FREQUENCY TRANSISTOR 7 NE64400 NE64408 FEATURES DESCRIPTION AND APPLICATIONS • LO W N O IS E F IG U R E : 2.7 d B at 4 GHz The NE644 is the latest in a series of NPN silicon transistors
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b427414ne64400ne64408ne644+3gain60al 232 necs21e
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NEL230153
Abstract: GG01 NEL2300 transistor k42 3500 2301 151 k424 LARGE SIGNAL IMPEDANCES transistor T330 NEL2301-53 NEL2303
Contextual Info: NE C / CALIFORNIA NEC 1SE D h 427 414 0001275 T 'S h 't l T - 3 3 -Ö ? Ö NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS jta = 2 5 °q RATINGS • HIGH GAIN: G mb = 6.5 dB
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h427414t-33-t-nel2300v3301+10nel230353nel230153gg01transistor k423500 2301 151k424large signal impedancestransistor t330nel2301-53nel2303
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