GG01 Search Results

Contextual Info: ADVANCED POWER TECHNOLOGY b3E Í • GSSTTDT GG01132 SST HAVP A d van ced PO W ER Te c h n o l o g y APT5040BNF 500V 16A 0.40Í2 APT5050BNF 500V 14A 0.50Í2 POWER MOS IV< FAST RECOVERY MOSFET FAMILY N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS

Contextual Info: AMERICA N/E LECTRON IC b3E » Gb?b7M3 GG01075 W «EDI MINIBRIDGE 50 ns. ULTRA-FAST RECOVERY 8 AMPERES* SINGLE-PHASE, FULL-WAVE BRIDGES HEAT SINK • CHASSIS • PC BOARD MOUNTING INTEGRALLY MOLDED HEAT SINK PROVIDES LOW THERMAL RESISTANCE SPACE SAVING IN-LINE DESIGN

VB025-16A02

Abstract: VB025-16N02 DIODE RECTIFIER BRIDGE VB025-12N02 VB025-06N02 16A02 E72873M VB025 GG01
Contextual Info: HbE D • t4 b ô b 2 5 b GG01S73 S MIXY I X Y S CORP □IXYS November 1991 Datasheet No. 911013A Single-Phase Diode Rectifier Bridge VB025 • Avalanche Rated Parts Available ■ Isolated Direct Copper Bond Base Plate

M3135

Abstract: Unicorn Microelectronics lcd UM3135 UM313S lcd 162 abc lcd solar calculator 8 digit 8 digit lcd calculator display b6730 H3885 Unicorn Microelectronics
Contextual Info: UNICORN MICR O EL EC TR ONI CS 5ME D • T27fl7flfi GG015Û4 1 ■ ¡ 3 s § V ^ U M = ^ = a 3 1 3 5 8 -Digit Calculator Features ■ Number of digits — 8 digits rough estimate calculation possible . ■ Calculations — Standard four functions (+, - , x,-f).

BG5556K

Abstract: AY5556K
Contextual Info: S T ANLEV ELECTRIC CO LTD 55E D • HbTßlSfl GG01bl2 bSb « I I S T S C H LE I ^ SUPER BRIGHT LED LAMP 2 3 rectang le type 2.5X5 mm 5546K/5556K SERIES ■ FEATURES • • • • • • ■ Package Dimension A V A IL A B L E IN 4 C O L O R S ; R E D , G R E E N ,

PRG5114S1

Abstract: PRG5114S
Contextual Info: STANLEY ELECTRIC CO LT] SSE T> m i4L,7fllSfl GG01bS3 17^ « I I S T SlÄNLEI SUPER BRIGHT LED LAMP BICOLOR TYPE <f>5 T-1 3 /4 ) 5114S-1 SERIES • FEATURES • • • • • • Package Dimension AVAILABLE IN 2 BICOLORS; RED/GREEN AND RED/YELLOW 2 LEADS WITH REVERSED POLARITY

T157WG

Abstract: S-MOS navnet A138G2 t177 4-bit full adder using nand gates and 3*8 decoder 6 input or gate SLA1024 T161RE
Contextual Info: S-M 0 S S Y S T E M S INC 5bE J> m 7 ci3 Z eÏQ'l GG01522 fc.35 H S I 1 0 SLA1 OOOO Series HIGH SPEED CMOS GATE ARRAYS • DESCRIPTION The S-MOS SLA10000 series is a channel-less gate array manufactured on S-MOS’ state-of-the-art 0.8 micron double-metal SiCMOS process. The series consists of 11 arrays ranging from 9,000 to 101,800 usable gates and

DIODE B12 41

Contextual Info: ÛUALITY SEMIC ONDUCT OR INC bSE D • 7MbfciöD3 GG013H3 TÔ4 QSFCT16244T, QSFCT162244T Advanced Information Ô High Speed CMOS 16-Bit Buffers QS74FCT16244T QS74FCT162244T FEATURES/BENEFITS • • • • 16-bit Function compatible to the 74F244 74FCT244 and 74FCT244T

Contextual Info: D TbE • b34 bfl05 GG0137b T71 CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.

Contextual Info: D TbE • b34 bfl05 GG0137b T71 OTHER RATINGS Electrical Life: 100,000 cycles min. ST1-1 and ST2-1 only - other models 40,000 cycles min. resistive. Initial Contact Resistance: 3 milliohms max. at 3 VDC, 0.1 Amp. Insulation Resistance: Greater than 200,000 megohms between terminals and case ground.

Contextual Info: D TbE • b34 bfl05 GG0137b T71 CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.

SE014

Abstract: t17c
Contextual Info: SE014 i a COLLMER SEMICONDUCTOR INC 4flE D 52307*15 GG0173T 575 • C O L ■ O u tlin e Drawings SCHOTTKY BARRIER DIODE ■ Features • Surface m ou nt device • Low V F « Super high speed sw itchin g. « H igh reliability by planer d e s ig n . JEDEC

90T03P

Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn

VS248X

Abstract: VS048X VS648X VS248 VS148X VS448X GQG1302 VS1048X VS848X
Contextual Info: MICROSEMI CORP/ MICRO EBR SbE D • bllS'iü? GG01301 T77 ■ H 2L MICRQ QUALITY / SEMICONDUCTOR INC 2 Amp Fast Recovery Time Epoxy Bridge Rectifiers 200 Nanosecond Maximum Reverse Recovery 50V, 100V, 200V, 400V, 600V, 800V, and 1000V VRRM Ratings 35 Amps Peak One Half Cycle Surge Current

BS212

Abstract: GG01 BS192
Contextual Info: I T T CORP/ I T T CMPNTS 41E D B 4bfi2bñ4 GG01403 b H I T O 'T '- 'll- 'L 'S VMOS TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETs featuring high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown,

Contextual Info: D TbE • b34 bfl05 GG0137b T71 CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.

MOSFET Modules

Abstract: 2MI100F-025 "MOSFET Modules" 2MI50S-050 2M150F-050 2MI100F-050 2MI50F-050 M210 2MI100F
Contextual Info: COLLMER SEMICONDUCTOR INC 34E I> 2 2 3 â 7 cia GG01553 T ' 3 ^ BICOL - i 5 FUJI MOSFET M odules 250V 500V MOSFET Module advantages: • Increase carrier frequencies • Improve control accuracy MOSFET Modules are used on: • Switch-mode power supplies SMPS

Contextual Info: DAICO INDUSTRIES INC blE D • EbDHTBO GG01753 S4T ■ DAI FEA TU R ES & ■ 2 0 - 7 0 0 MHz ■ 0.4 mA, +5 VDC ■ 22 nSec Switching Speed MODEL NO. DATI 5015 GaAs 1 Section Attenuator ■ 10 nSec Rise Time ■ 10, 20, or 30 dB Steps ■ TTL Driver A A F LU S H WITH S A M E S U R F A C E

Contextual Info: D TbE • b34 bfl05 GG0137b T71 CONTACT RATINGS Q Power models - 6 Amps at 125 VAC, 3 Amps at 250 VAC or 7 Amps at 30 VDC resistive loads . B Dry Circuit models - 0.4 Volt-Amps (VA) max. at 20 V max. (AC or DC). UL models - 6 Amps at 125 VAC or 3 Amps at 250 VAC (75% power factor). UL file no. E66367.

Contextual Info: 5bE D 3030 ^0^ GG01070 fi Ï fi HVCT VTP12 50 , 1250S VTP Process Photodiodes E Hit, T-41-51 VACTEC PACKAGE DIMENSIONS inch (mm PRODUCT DESCRIPTION CASE 12 Planar silicon photodiode mounted on a two lead ceramic header. These diodes have a filter incorporated into the pack­

VTB5040B

Abstract: VTB5041B photodiode vtb 5041
Contextual Info: SbE D aGSObOT GG0103Ô V T B 5 0 4 0 B , 5041 B VTB Process Photodiodes £ g & G DTD » V C T V A C T E C PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 14 Planar silicon photodiode in a "flat" window, dual lead TO-5 package. The package incorporates an infrared rejec­

cm8870 dtmf decoder circuit diagram

Abstract: cm8870 dtmf decoder pin diagram of CM8870 cm8870 dtmf decoder ic CM8870 IC 16dtmf generator DTMF cm8870 CM8870 cm8870 DTMF CM8870C
Contextual Info: C M » / S E M I C O N D U C T O R »IV 3ÜE » I fiBlbMD GG01b5G 4 «CAL T -7S-Z 1-01 A CM8870 CMD Microcircuits CMOS DTMF Integrated Receivers FEATURES GENERAL DESCRIPTION • Full DTM F receiver • Less than 35 mW power consumption • Industrial temperature range

Contextual Info: ADVANCE INFORMATION I FIBRE CHANNEL INTERFACE CONTROLLER FEATURES • Compliant with ANSI X3T11 Fibre Channel FC-1 and FC-2 layer functionality • Supports Fibre Channel data transmission rates of 1062.5, 531.25, and 265.625 Mbit/s • Full duplex operation

MB86686A

Contextual Info: MB86683B Edition 1.0 1. OVERVIEW The NTC is a full duplex device which can be used to provide broadband termination functions in a variety of applications. Its primary use is for terminating the user or network ends of a user-network interface based on ITU-T,