VTP12 Search Results

VTP1220FBH

Contextual Info: D A T A S H E E T O Preliminary Data Sheet VTP1220FBH IR Blocking Silicon Photodiode Description This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good

Contextual Info: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection

Photodiode vactec

Abstract: EG*G Vactec VTP1232
Contextual Info: VTP1232 VTP Process Photodiodes P A C K A G E DIMENSIONS inch mm 2 4 0 ( 6 .1 0 ) M IN IM U M .05-0 ( t . 2 7 ) , .030 (0 .7 6 ) .2 2 0 (5 .5 9 ) . 3 4 (8 . 6 ) .1 7 (4 . 3 ) ^<t£)nom- .026 (0 .6 6 ) [.0 1 7 .2 0 0 ( 5 . 0 8 ) .1 8 0 ( 4 . 5 7 ) c JL (0 .4 3 )

nf 0036 diode

Abstract: VTP1232H sr100 SR 100 NF1100
Contextual Info: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection

VTP1232F

Contextual Info: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range

IR photodiode

Abstract: VTP1220FBH IR block photodiode photodiode eyes response photodiode eyes response application Silicon Photocells silicon photodiode silicon photodiode human eye Ir blocking filter
Contextual Info: D A T A S H E E T Optoelectronics Preliminary Data Sheet VTP1220FBH IR Blocking Silicon Photodiode Description Featur es This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good

IR photodiode

Abstract: Silicon Photocells perkin VTP1220FB silicon photodiode silicon photocell 100-FC silicon photodiode human eye
Contextual Info: D A T A S H E E T Optoelectronics Preliminary Data Sheet VTP1220FB IR Blocking Silicon Photodiode Description Featur es This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3⁄4 flat end-looking package. These diodes contain an integral IR rejection filter, offering good

Contextual Info: SILICON PHOTODIODE VTP1232F PRELIMINARY ENGINEERING DATA SHEET FEATURES PRODUCT DESCRIPTION • Low dark current • Fast response This VTP processed P on N planar silicon photodiode is housed in a clear, T-1 3/4 endlooking package. • Blue to IR spectral range

Contextual Info: VTP Process Photodiodes VTP1232H PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection

Contextual Info: VTP1232 VTP Process Photodiodes PACKAGE DIMENSIONS inch mm MINIMUM , .34 (8.6) .17 (4.3) .050 (1 .27 ) .030 (0.76 ) 240 (6 .10 ) .220 (5 .59 ) k — ~ ^ -N O M . (1 .52 ) .026 (0 .66 ) [ . 0 1 7 (0 .4 3 ) JL .200 (5 .08 ) .180 (4 .57 ) Also available in infrared transmitting/

Contextual Info: 5bE D 3030 ^0^ GG01070 fi Ï fi HVCT VTP12 50 , 1250S VTP Process Photodiodes E Hit, T-41-51 VACTEC PACKAGE DIMENSIONS inch (mm PRODUCT DESCRIPTION CASE 12 Planar silicon photodiode mounted on a two lead ceramic header. These diodes have a filter incorporated into the pack­

VTP1250

Abstract: VTP1250S
Contextual Info: T> 5bE WM a GBO büT DDD1D7Q VTP Process Photodiodes E 6 & G ilTb « V C T VTP1250, 1250S VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm .300 (7 .6 2 ) ! ’ UINIUUU T .0 76 (1.9 1) .0 70 (1.7 8) ♦ .3 32 (8 .+3 ) .320 (8 .1 3 ) ( _ „ /I/" I V j „ -

VTP1232

Abstract: OPTO-52
Contextual Info: VTP Process Photodiodes VTP1232 PACKAGE DIMENSIONS inch mm (Also available in infrared transmitting visible blocking version) PRODUCT DESCRIPTION CASE 26 T-1¾ CHIP ACTIVE AREA: .0036 in2 (2.326 mm2) ABSOLUTE MAXIMUM RATINGS This photodiode features the largest detection

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

269EG

Abstract: UR620
Contextual Info: OFF-LINE SWITCH MODE TRANSFORMERS Indicated Parts are UL1950 & CSA-950 Recognized under UL File# E162344 * Designed for Use with Power Integrations IC's. * Designed to Meet UL1950/IEC950 Safety Standards. * Design Engineering Support Available. * Multiple Configurations.

UR620

Abstract: TOP259EN 257EN PMCE-0330
Contextual Info: OFF-LINE SWITCH MODE TRANSFORMERS Indicated Parts are UL1950 & CSA-950 Recognized under UL File# E162344 * Designed for Use with Power Integrations IC's. * Designed to Meet UL1950/IEC950 Safety Standards. * Design Engineering Support Available. * Multiple Configurations.

BSW17

Abstract: VCO Og VTP120 TA1267AF TP10 TP20 VR13 VTP122
Contextual Info: TA1267AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1267AF MULTISTANDARD PIF / SIF SYNCHRONOUS DEMODULATOR IC FEATURES PIF CIRCUIT • True synchronous PIF demodulator • 3-stages gain controlled PIF amplifier • High speed response PIF AGC detector

VTP8651

Abstract: VTP1112 VTP4085 VTP1188S VTP11188S VTP1232 silicon photodiode array VTP1012 VTP7840 VTP100
Contextual Info: VTP Process Photodiodes VTP100 PACKAGE DIMENSIONS inch mm CASE 52 FLAT SIDELOOKER CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic sidelooker package. The package material is infrared transmitting (blocking visible light).

BMA140

Abstract: integral starter is 2000 diagram GC0251K triaxial acceleration sensors circuit diagram DS51519 930k DS51284 GC0251K-ND PIC32 mplab pm3 schematic
Contextual Info: MPLAB Starter Kit for PIC24H Microcontrollers User’s Guide 2008 Microchip Technology Inc. DS51780A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

100K VARIABLE RESISTOR

Abstract: BLM21A102SPT TAJC106M016 c38 transistor
Contextual Info: 19-1420; Rev 1; 6/00 MAX3867 Evaluation Kit Features ♦ Fully Assembled and Tested The EV kit is composed of two independent sections on the PC board. The output of the electrical evaluation section is interfaced to an SMA connector, which can be connected to a 50Ω terminated oscilloscope. The

philips sub woofer circuit diagram

Abstract: TA1304F toshiba v16s sub woofer circuit diagram woofer ct GLPF100 GLPF125 GLPF170 GLPF210 TA1304N
Contextual Info: TA1304F/N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1304F,TA1304N TV-SOUND PROCESSOR FEATURES Sound processor l 2 ch inputs L-ch, R-ch l 3 ch outputs (L-ch, R-ch, W-ch) l Volume, balance, treble, bass and woofer level control l Built-in woofer low-pass filter

100K VARIABLE RESISTOR

Abstract: 503 Variable Resistor variable resistor 104 pin configuration 1K variable resistor DIODE R40 Variable Resistors 503 15K variable resistor maxim TOP MARKING SOT23 MARKING SB6 3296W104-ND
Contextual Info: 19-2363; Rev 0; 4/02 MAX3850 Evaluation Kit Features ♦ Fully Assembled and Tested The EV kit is composed of two independent electrically isolated sections on the PC board. The output of the electrical evaluation section is interfaced to an SMA connector, which can be connected to a 50Ω terminated

Contextual Info: TA1267AF TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA1267AF MULTISTANDARD PIF / SIF SYNCHRONOUS DEMODULATOR IC FEATURES PIF CIRCUIT Weight: 0.27 g Typ. • True synchronous PIF demodulator · 3-stages gain controlled PIF amplifier · High speed response PIF AGC detector

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1