UPC1675G Search Results

UPC1675G

Abstract: UPC1675B uPC1675 UPC1675P mmic case styles
Contextual Info: NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • WIDE BANDWIDTH: 1900 MHz TYP at 3 dB Point for UPC1675G 2100 MHz TYP at 3 dB Point for UPC1675B, UPC1675P

cd 4093 equivalent

Contextual Info: 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER UPC1675G UPC1675G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES WIDE BANDWIDTH: 19 0 0 M H z at 3 dB Point HIGH ISOLATION SINGLE POWER SUPPLY: V c c = 5 V CD INPUT/OUTPUT MATCHED TO 50 Q 12

UPC1675G-T1

Abstract: UPC1675G
Contextual Info: 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER UPC1675G UPC1675G NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE FEATURES • WIDE BANDWIDTH: 1900 MHz at 3 dB Point 5.5 V 5.0 V 4.5 V • HIGH ISOLATION Gain,GS dB • INPUT/OUTPUT MATCHED TO 50 Ω

SOT-26

Abstract: t06 sot 23 SOT26 upc2713t UPC1678G
Contextual Info: Wideband Amplifiers 'V - v î tigmr- U14mb ï* ' < *ttm • TTTV. - Vec V MIN | NF (dB) Icc (mA) TYP M A X TYP Gain (dB) MIN TYP M AX R L out (dB) (dB) TYP TYP PldB (dBm) TYP ISO L (dB) TYP «<* «04» ¿¡SSL 4 •1 * J ! '. UPC1675G 1900 5 12 17 22 5.5

PC1675G

Abstract: 1675P
Contextual Info: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G

UPC1675G-T1

Contextual Info: 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER FEATURES UPC1675G UPC1675G NOISE FIGURE AND GAIN v*. FREQUENCY AND VOLTAGE WIDE BANDWIDTH: 1900 MHz at 3 dB Point HIGH ISOLATION SINGLE POWER SUPPLY: Vcc - 5 V CO INPUT/OUTPUT MATCHED TO 50 Q AVAILABLE IN TAPE AND REEL

Contextual Info: NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE DIMENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • WIDE BANDWIDTH: 1900 MHz TYP at 3 dB Point for UPC1675G 2100 MHz TYP at 3 dB Point for UPC1675B, UPC1675P

UPC1675G-T1

Contextual Info: UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON M M IC AMPLIFIER UPC1675G NOISE FIGURE AND INSERTION POWER GAIN vs. FREQUENCY FE A T U R E S WIDE BANDWIDTH: 1900 MHz at 3 dB Point for UPC1675G 2 00 MHz at 3 dB Point for UPC1675B, UPC1675P

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

transistor t06

Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX

mmic a08

Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18

C1A MARKING

Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10