2SC5179
Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639r2sc51792sc5180+72sc5181ne68618ne68619ne68630ne68633s21etransistor nec cel
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408
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84t MARKING
Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10
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ne68039rne68139rne68539rne68639r+9ne68739rne68839rne85639r84t markingmarking 83ttransistor marking 68tmarking 84tmarking 28r1817 transistor
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2SC5181
Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ne68618-t1ne68619-t1ne68630-t1+13ne68633-t1ne68639-t1ne68639r-t124-hour2sc51812sc51792sc5180ne68618ne68619ne68630s21eupa807t73300
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NE68018
Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10
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PJ 0349
Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z
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ne686ot-143ne68618-t1ne68619-t1+14ne68630-t1ne68633-t1ne68639-t1ne68639r-t1pj 0349cd 888 cbpj 0266 ivpj 0399pj 1126 1vnt 9989pj 1126sic sot343ic hs 8108pj 0159
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marking 269-3 sot23
Abstract: NE68618-T1-A IC ua 741 T 0599
Contextual Info: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639rne68618-t1-ane68619-t1-a+7ne68630-t1ne68633-t1ne68639-t1ne68639r-t1marking 269-3 sot23ic ua 741t 0599
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NE68019
Abstract: NE68839 NE68018 NE68719
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817
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cd 1691 cp
Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ot-143ne68618-t1ne68619-t1+10ne68630-t1ne68633-t1ne68639-t1cd 1691 cpcp 8888sj 6344cp8888nt 99891691 aibt 67600
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508
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sot 326
Abstract: 338 sot-23 NE68530 NE02139
Contextual Info: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71
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20323
Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639r20323marking 269-3 sot23+7s21e2sc51792sc51802sc5181ne68618ne68619ne68630
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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marking 269-3 sot23
Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ne68618-t1ne68619-t1ne68630-t1+13ne68633-t1ne68639-t1ne68639r-t124-hourmarking 269-3 sot23ne68618sot-143 marking 5572sc51792sc51802sc5181ne68619ne68630ne68633
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C1A MARKING
Abstract: c1a c1b c1c marking C1C NE68139 NE02139 NE68839 MARKING r4 ne85639 R47 marking NE68039
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 LEADS 2, 3, 4 2 2.9 ± 0.2 0.95 3 1.9 0.85 4 1 +0.10 0.6 -0.05 +0.2 1.1 -0.1 0.8 0.16 +0.10
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ne02139ne68039ne68139ne68539+11ne68639ne68739ne68839ne85639upc1675gupc1676gc1a markingc1a c1b c1cmarking c1cmarking r4r47 marking
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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x10679ejhv0sg00free transistor equivalent book 2scupa1556ahthe japanese transistor manual 1981+7samsung uhf/vhf tv tunermosfet cross-reference 2skpd431000a-xupper arm digital sphygmomanometer circuit diagrampd72001upc1237upc 2002
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transistor IR 324 C
Abstract: transistor selection guide
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
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ne46134ne85634ne46734ne68018-t1+2transistor ir 324 ctransistor selection guide
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ne666
Abstract: 21421 Series ic 74600 NE686
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz
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is21ei2ne686ot-143ne68618-t1+5ne68619-t1ne68630-t1ne66621421 seriesic 74600
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tt 18934
Abstract: 30i sot23 5140 SN 74500
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z
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is21el2is21ei2ne686ne68618-t1+7ne68619-t1ne68630-t1ne68633-t1tt 1893430i sot235140sn 74500
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NE68018
Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89
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