2SC3355 SPICE MODEL
Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness
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f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101
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Application Notes
Abstract: catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016
Contextual Info: APPLICATION NOTE APN1016: A Low Phase Noise VCO Design for PCS Handset Applications Introduction The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: The VCO design in a PCS handset must satisfy a number of
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apn1016application notescatv distribution network diagrammqe920+6catv distribution networkcolpitts vco designaeroflex pn9000mqe523datasheet series and parallel resonance circuithyperabrupt tuned oscillator
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2SC5179
Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639r2sc51792sc5180+72sc5181ne68618ne68619ne68630ne68633s21etransistor nec cel
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77
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2SK2396
Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数
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x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711
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uPD16305
Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943
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nf025
Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920
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x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408
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Colpitts VCO design
Abstract: MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu
Contextual Info: Application Note A Low Phase Noise VCO Design for PCS Handset Applications APN1016 The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: Introduction The VCO design in a PCS handset must satisfy a number
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apn1016apn1004apn1006apn1005+13apn1007apn1012apn101311/99acolpitts vco designmqe920rdiv-3protel pcb layoutcolpittsmurata vco mqe523varactor diode q factor measurementloop gain of colpitts vco designsimu
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2SC5181
Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ne68618-t1ne68619-t1ne68630-t1+13ne68633-t1ne68639-t1ne68639r-t124-hour2sc51812sc51792sc5180ne68618ne68619ne68630s21eupa807t73300
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NE68018
Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10
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PJ 0349
Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z
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ne686ot-143ne68618-t1ne68619-t1+14ne68630-t1ne68633-t1ne68639-t1ne68639r-t1pj 0349cd 888 cbpj 0266 ivpj 0399pj 1126 1vnt 9989pj 1126sic sot343ic hs 8108pj 0159
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2
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marking 269-3 sot23
Abstract: NE68618-T1-A IC ua 741 T 0599
Contextual Info: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639rne68618-t1-ane68619-t1-a+7ne68630-t1ne68633-t1ne68639-t1ne68639r-t1marking 269-3 sot23ic ua 741t 0599
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transistor marking T79 ghz
Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority
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pu10015ej04v0pftransistor marking t79 ghzmarking code c1h mmicmarking code c3e sot-89+7upb1507marking code c1g mmicmarking code c1e mmicdata book transistors 2saupc2712pc3215transistor 2sa data book
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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ne68018ne680upa801tcupa808tc+16upa821tcupa826tcupa861tdupa831tcupa862tdupa835tcnec b1007t79 code markingc3206marking s16marking code c1hqfn marking t88c3h markingne02107t79 markingc3206g
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CR10-101J-T
Abstract: colpitts oscillator using 741 Colpitts VCO design APN1010 varactor diode for Colpitts oscillator kyocera sot 23-5 Tuner Applications APN1006 meander-line VCO circuit diagram 1.2 ghz tuner
Contextual Info: Application Note A VCO Design for WLAN Applications in the 2.4–2.5 GHz ISM Band APN1010 Introduction The increased demand for mobile network connections has lead to the establishment of RF interface standards for Wireless Local Area Networks WLANs . The
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apn101011-bitapn1007apn1012+13apn1013apn1015apn10164/00acr10-101j-tcolpitts oscillator using 741colpitts vco designvaractor diode for colpitts oscillatorkyocera sot 23-5tuner applications apn1006meander-linevco circuit diagram1.2 ghz tuner
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NE68019
Abstract: NE68839 NE68018 NE68719
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Contextual Info: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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p14740ee5v0pf00marking code c1e smd transistortransistor smd marking code s01fmcw radar+7transistor smd c1yne92039g2b 6-pin smdne582m03ne3210so1smd transistor g1-lsmd code marking nec 817
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cd 1691 cp
Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz
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m33 tf 130
Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP
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ne68039ne68139ne68539ne85639+14ot-143ne68000ne68100ne85600upa862tdne894m33 tf 130nesg204619nesg2046nesg2030m042nesg2101m05ne68030ne68033ne68133
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508
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sot 326
Abstract: 338 sot-23 NE68530 NE02139
Contextual Info: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100
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2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
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p10100ej6v0sg002sk2396anec 2sk2396ak2396a+6pc16582sc2407uaa 1006k2396k2597marking code saw mos transistor
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