UPC2712 Search Results

am tuners

Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

pt 7313

Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Contextual Info: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:

upc2709 upc2712

Abstract: UPC2712T UPC2709 UPC2709T UPC2709T-E3 UPC2712 UPC2712T-E3 t06 94 CIH-UPC2712T T0642
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T GAIN vs. FREQUENCY FEATURES 30 • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T 25 Gain, Gs (dB) • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) 00 • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

MMIC SOT 363 marking 850

Contextual Info: 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: V cc = 4.5 to 5.5 V • W IDEBAND RESPONSE:

marking c1g

Abstract: marking c1h UPC2712TB pt 7313
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

UPC2709

Abstract: UPC2712 upc2709 upc2712 UPC2709T UPC2709T-E3 UPC2712T UPC2712T-E3 UPC2709T-E3-A
Contextual Info: UPC2709T, UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES GAIN vs. FREQUENCY • WIDE FREQUENCY RESPONSE: 2.5 GHz 30 • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) 25 Gain, Gs (dB) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

upc 1185 h

Abstract: uPC 1185 2709T UPC 1208
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: + 11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

CIH-UPC2712T

Abstract: CIE-UPC2709T UPC2709T t06 93
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE

CIE-UPC2709T

Abstract: upc2712t
Contextual Info: 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2709T UPC2712T FEATURES WIDE FREQUENCY RESPONSE: 2.5 GHz HIGH GAIN: 23 dB UPC2709T SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) m •o INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE O Ç ‘«j

Contextual Info: a :? '> í SEC UPC2709T UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES_ • WIDE FREQUENCY RESPONSE: 2.5 GHz • HIGH GAIN: 23 dB UPC2709T • SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SMALL PACKAGE

C1H mmic

Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
Contextual Info: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V

pt 7313

Abstract: nec marking power amplifier upc
Contextual Info: ” 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH D EN SITY SUR FA CE M O UNTING: 6 pin super m inim old or SO T- 363 package GAIN vs. FREQUENCY • SUPPLY VO LTAG E: V c c = 4.5 to 5.5 V

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

marking C3Z

Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 2 7 0 8 T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2708T is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C is packaged in minimold package.

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

uaf4000

Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP