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Boyd Corporation 14986-39 REV K-G THM,14986-39 REV K-G - Bulk (Alt: 034014)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	14986-39 REV K-G	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
VPG Foil Resistors Y4078639R000F0L Ultra-High Precision Resistor Metal Foil 639Ohm 1% Bulk - Bulk (Alt: Y4078639R000F0L)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	Y4078639R000F0L	Bulk		20 Weeks	25	1 - 10 - 100 $39.95 1000 $35.95 10000 $35.95	Buy Now
YAGEO Corporation RC1210JR-0710KL Thick Film Resistors - SMD General Purpose Chip Resistor 1210, 10kOhms, 5%, 1/2W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	RC1210JR-0710KL	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.02	Buy Now
Vishay Intertechnologies SMBJ8.5A-E3/52 ESD Protection Diodes / TVS Diodes 8.5V 1000W UniDir TransZorb 5% Tol
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SMBJ8.5A-E3/52	Reel	5,250		750	1 - 10 - 100 - 1000 $0.07 10000 $0.06	Buy Now
Vishay Intertechnologies CRCW06036K65FKEA Thick Film Resistors - SMD 1/8 Watt 6.65Kohms 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	CRCW06036K65FKEA	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.00	Buy Now

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8639R Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC5179 Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	ne686 8639r 2sc5179 2sc5180 +72sc5181 ne68618 ne68619 ne68630 ne68633 s21e transistor nec cel	PDF
marking 269-3 sot23 Abstract: NE68618-T1-A IC ua 741 T 0599 Contextual Info: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	ne686 8639r ne68618-t1-a ne68619-t1-a +7ne68630-t1 ne68633-t1 ne68639-t1 ne68639r-t1 marking 269-3 sot23 ic ua 741 t 0599	PDF
Mys 99 178 Abstract: MYS 99 cj1w-cort21 NT31C-ST143-Ev3 MYS 99 133 E5CS-R1KJ 8203-M TL-X1R 4503m st MYS 99 102 Contextual Info: Product Code Description AA994896G 537.019.200 E2A 7033A 02A-M18KS08-WP-C1 5M OMC PF 1234C 11PFA PF 1235A 14PFA VAP 1001D 1VAP-1W VAP21001C 1VAP2-1 VAP21004H 1VAP2-2 VAP21015C 1VAP2-6 VE 2001G 1VE-10CA-11 VE 2002E 1VE-10CA-12 VE 2003C 1VE-10CA-13 VE 3001B	Original	aa994896g 2a-m18ks08-wp-c1 1234c 11pfa +1614pfa 1001d vap21001c vap21004h vap21015c 2001g mys 99 178 mys 99 cj1w-cort21 nt31c-st143-ev3 mys 99 133 e5cs-r1kj 8203-m tl-x1r 4503m st mys 99 102	PDF
20323 Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: \|S21E\|2 = 12 dB @ 2 V, 7 mA, 2 GHz \|S21E\|2 = 11 dB @ 1 V, 5 mA, 2 GHz	Original	ne686 8639r 20323 marking 269-3 sot23 +7s21e 2sc5179 2sc5180 2sc5181 ne68618 ne68619 ne68630	PDF