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    NE68119 Search Results

    NE68119 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NE68119
    NEC Semiconductor Selection Guide Original PDF 3MB 399
    NE68119
    NEC NPN silicon high frequency transistor. Original PDF 220.07KB 20
    NE68119-A
    California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF 20
    NE68119-T1
    NEC NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF 200.29KB 20
    NE68119-T1
    NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF 220.07KB 20
    NE68119-T1-A
    California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 1GHZ SMD Original PDF 20

    NE68119 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE68119

    Abstract: 140E-12
    Contextual Info: NE68119 NONLINEAR MODEL SCHEMATIC Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185.0 XCJC NF 1.02 CJS VAF 15.0 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11 FC


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    ne681197e-1677e-110e-12+518e-1221e-1219e-92e-12140e-12 PDF

    NE68519

    Abstract: NE68019 NE68119 NE85619
    Contextual Info: Noise Figure and Associated Gain vs. Frequency 25 4.0 24 VCE = 2.5 V IC = 3.0 mA 23 22 3.0 NE85619 20 NE68119 NE68519 19 18 NE68019 17 16 15 2.0 14 13 12 11 10 1.0 9 NE68119 NE85619 Associated Gain, GA dB Noise Figure, NF (dB) 21 NE68519 8 7 NE68019 6 5


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    ne85619ne68119ne68519ne68019+124-hour PDF

    kf 203 transistor

    Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


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    ne681ne68100ne68118-t1ne68119-t1+12ne68130-t1ne68133-t1bne68135kf 203 transistor08e-12ic 2030 pin connectionsbjt 522datasheet of bjt 547ne and micro-x2sc42272sc5007bf 194 npn transistor PDF

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


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    f2002f2003f20042sc3355 spice model+9transistor c2003c319bmgf1412rf transistor 10ghzmrf134 rf model .lib file2sk571mgf1402mrf9331pb_hp_at41411_19921101 PDF

    Application Notes

    Abstract: catv DISTRIBUTION NETWORK diagram MQE920 CATV DISTRIBUTION NETWORK Colpitts VCO design Aeroflex PN9000 MQE523 datasheet series and parallel resonance circuit hyperabrupt tuned oscillator APN1016
    Contextual Info: APPLICATION NOTE APN1016: A Low Phase Noise VCO Design for PCS Handset Applications Introduction The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: The VCO design in a PCS handset must satisfy a number of


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    apn1016application notescatv distribution network diagrammqe920+6catv distribution networkcolpitts vco designaeroflex pn9000mqe523datasheet series and parallel resonance circuithyperabrupt tuned oscillator PDF

    Application Notes

    Abstract: Colpitts VCO design varactor 650 manual APN1007 SMP1320-079 spice Tuner Applications APN1006 diode SPICE model varactor diode q factor measurement C146P SMV1320-079
    Contextual Info: APPLICATION NOTE APN1015: A Dual-Band Switchable IF VCO for GSM/PCS Handsets Introduction Many of today’s handset cellular telephones are multifunctional, multiband units. They are complex RF systems with frequency plans requiring multiple RF sources. To accomplish this, the


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    apn1015apn1007application notescolpitts vco design+7varactor 650 manualsmp1320-079 spicetuner applications apn1006diode spice modelvaractor diode q factor measurementc146psmv1320-079 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    r09cl0001ej0100px10727ej02v0pffet marking code g5dpg2179tb+8marking code c3e sot-89marking code c1e mmicmarking code c1g mmic2sc3357/ne85634pg2163t5nsot-23 g6gpc8230tumarking code c1h mmic PDF

    Colpitts VCO design

    Abstract: saw Colpitts circuit design Colpitts VCO Alpha Industries APN1003 PN Junction Diode varactor Colpitts APN1002 m6 transitor varactor diode for Colpitts oscillator
    Contextual Info: Application Note VCO Designs for Wireless Handset and CATV Set-Top Applications APN1012 Introduction Voltage Controlled Oscillators VCOs have come to the forefront of RF designs together with the first PLL circuits. In the era before the PLL, oscillators were mostly free


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    apn1012apn1005apn1007apn1001+11apn10028/99acolpitts vco designsaw colpitts circuit designcolpitts vcoalpha industriesapn1003pn junction diode varactorcolpittsm6 transitorvaractor diode for colpitts oscillator PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    g0706px10727ej02v0pfnec mosfet marked v75nec ga fet marking code t79+8fet marking code g5dmarking code c1g mmiclga 1155 pin diagrampb1507marking code c1e mmicmarking code c1h mmicpc8230tummic sot 363 marking code 77 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器(µ PCx×××,µPG××××) 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


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    x13769xj2v0cd00pc8119tpc8120tpc8130ta+16pc8131tapg175tapc2723tpc3206grpc2748pc27452sk2396pc2763pc1658ne272832sc35452sc33572sc2757ne932392sc2570apc2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Contextual Info: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


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    pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd16305upd63724aupc5024upc50232sc1940upc1237upd65656upc458upc2710upd65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


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    x13769xj2v0cd00950mhz500mhzpc2794+13pc1687pc2744pc2775/nf025ne27283upc27x-band power transistor 100wne42484p147d2sk2396upg508nf025db2sc5408 PDF

    Colpitts VCO design

    Abstract: MQE920 RDIV-3 protel PCB LAYOUT APN1016 Colpitts murata vco MQE523 varactor diode q factor measurement loop gain of Colpitts VCO design simu
    Contextual Info: Application Note A Low Phase Noise VCO Design for PCS Handset Applications APN1016 The factors that have significant impact on the primary VCO electrical specifications may be summarized as follows: Introduction The VCO design in a PCS handset must satisfy a number


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    apn1016apn1004apn1006apn1005+13apn1007apn1012apn101311/99acolpitts vco designmqe920rdiv-3protel pcb layoutcolpittsmurata vco mqe523varactor diode q factor measurementloop gain of colpitts vco designsimu PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    p462-ndp463-ndlng295lfcp2ulng395mftp5u+11us2011schematic diagram atx power supply 500wpioneer pal 012a1000w inverter pure sine wave schematic diagram600va numeric ups circuit diagramswinbond bios 25064tle 9180 infineonsmsc mec 1300 nutbe schematic diagram inverter 2000wdk55circuit diagram of luminous 600va ups PDF

    Transistors BF 494

    Abstract: Transistor BJT 547 b transistor kf 469
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)


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    ne681ne68100ne68118-t1ne68119-t1+6ne68130-t1ne68133-t1bne68135transistors bf 494transistor bjt 547 btransistor kf 469 PDF

    NE66100

    Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP


    OCR Scan
    ne681ne66100transistor c 6073transistor c 1279+3h16101ne68139ic 17806 PDF

    transistor npn c 6073

    Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)


    OCR Scan
    ne681ot-23transistor npn c 6073433 sot-23+3transistor npn d 2078944 1l2ne68139 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


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    gp-20fsq510 equivalentbta12 6008bta16 6008+7zigbee interface with avr atmega16precision triac control thermostatthyristor t 558 f eupecgw 5819 diodetransistor a564a564 transistorbsm25gp120 b2 PDF

    avx CR10

    Abstract: APN1005 varactor diode notes semiconductors catalogue reverse biasing a varactor diode NE68119 SMV1265 SMV1265-011 NEC k 2134 transistor x band varactor diode
    Contextual Info: APPLICATION NOTE APN1005: A Balanced Wideband VCO for Set-Top TV Tuner Applications Introduction VCO Model Modern set-top TV DBS tuner systems require more channel coverage, while maintaining competitive prices. This situation creates tough design goals: to improve performance and simplify


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    apn1005smv1265-011avx cr10varactor diode notes+6semiconductors cataloguereverse biasing a varactor diodene68119smv1265nec k 2134 transistorx band varactor diode PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


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    2013/4msmd m05 sot23ne5531ne352+4a3 smd sot-343transistor smd m05smd transistor m05transistor smd code 404 PDF

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


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    07/2m847indiana/kentuckyne3511s02 s2pne3512s02 s2p+8smd m05 sotsmd transistor m05s06 smdupg2162t5nne3210s01ne321000qfn2020upg2250t5n PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


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    pu10015ej04v0pftransistor marking t79 ghzmarking code c1h mmicmarking code c3e sot-89+7upb1507marking code c1g mmicmarking code c1e mmicdata book transistors 2saupc2712pc3215transistor 2sa data book PDF

    2SC3583

    Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION


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    ne68124-hour2sc3583kf 203 transistor+7bjt bf 167marking 855 sot 3532sc42272sc50072sc5012ne68139ne68118 PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    24ghzbf517bf770abf771+16bf775bf799bf799wbfp181bfp181rbfp182xm0830sjsmd code marking 162 sot23-5marking v14 sot23-5rf transistor selectionsmd code marking rf ft sot23smd code marking nec rf transistorsot-363 infsmd marking d3 sot363xm0860shmga51563 PDF