NE681 Search Results

NE68135

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68135 Q1 CCB_PKG 0.11pF 0.07pF LC 0.96 nH CCB RB_PKG LB_PKG LB 0.15nH 0.45nH RC_PKG COLLECTOR 0.1 ohms CCE 0.01pF BASE 0.1 ohms LC_PKG 0.15nH CCE_PKG 0.2pF LE_PKG 0.38nH CBE_PKG 0.05pF RE_PKG 0.1 ohms CBEX_PKG CCEX_PKG 0.2pF 0.1pF

NE68118

Contextual Info: NONLINEAR MODEL SCHEMATIC NE68118 Q1 CCBPKG CCB LC LBX LCX Collector LB Base CCE LC LE CBEPKG CCEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 2.7e-16 MJC 0.56 BF 185 XCJC NF 1.02 CJS VAF 15 VJS 0.75 IKF 0.055 MJS ISE 1.77e-11

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

ic 741 free

Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

Contextual Info: NE68130 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150 I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

Contextual Info: SILICON TRANSISTOR UPA812T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS Units in mm FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz

ic 741 free

Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz 2.1 HIGH GAIN: IS21 EI2 = 12 dB TYP at 1 GHz

Transistors BF 494

Abstract: Transistor BJT 547 b transistor kf 469
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 00 CHIP 35 (MICRO-X) 18 (SOT 343 STYLE)

NE66100

Abstract: transistor c 6073 Transistor C 1279 h16101 NE68139 ic 17806
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr - 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP

transistor npn c 6073

Abstract: 433 SOT-23 transistor npn d 2078 944 1L2 NE68139
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fx= 8 GHz • LOW NOISE FIGURE: 1,2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz 00 CHIP 35 (MICRO-X) 33 (SOT 23 STYLE) 39 (SOT 143 STYLE)

Contextual Info: NE68137 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

Contextual Info: NE68133 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

Contextual Info: NE68100 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)10 V(BR)CBO (V)20 I(C) Max. (A)65m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)10

2SC3583

Abstract: kf 203 transistor BJT BF 167 marking 855 sot 353 2SC4227 2SC5007 2SC5012 NE681 NE68139 NE68118
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

NE681M03

Abstract: m03 transistor BJT IC Vce af1rc bf 239 NE AND micro-X 2SC5433 NE681 S21E 2SC543
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

c 5929 transistor

Abstract: transistor k 2541 Transistor C 4927 741 LEM UPA802T 2955 transistor lem 723 733 transistor c 5299
Contextual Info: SILICON TRANSISTOR UPA802T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz HIGH GAIN BANDWIDTH: fT = 7 GHz

1820 0944

Abstract: NE68135 ca 4558 NE68130 BJT BF 167 bjt 522 BJT IC Vce 2SC4227 2SC5007 NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) s

NE68019

Abstract: NE68839 NE68018 NE68719
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA812T OUTLINE DIMENSIONS Units in mm FEATURES SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN:

bjt npn m03

Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M03 OUTLINE DIMENSIONS um ts in mm FEATURES • PACKAGE OUTLINE M03 NEW M03 PACKAGE: pi • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance

UPA802T

Abstract: 10 ghz transistor npn dual emitter RF Transistor NE681 S21E UPA802T-T1 2 ghz transistor
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • UPA802T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE681 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.4 dB TYP at 1 GHz HIGH GAIN: |S21E|2 = 12 dB TYP at 1 GHz

2SC5650

Abstract: NE681 NE681M23 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height

2SC5615

Abstract: NE681 NE681M13 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M13 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –