BFP181R Search Results

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • Pb-free RoHS compliant 2 4 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 package 1) • Qualified according AEC Q101 * Short term description

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

Contextual Info: SIEMENS BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz RFs 1=E Q62702-F1685 2=C 3=E Package 03 BFP181R II ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

BFP181R

Abstract: marking code RFs
Contextual Info: BFP181R NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA • fT = 8 GHz, F = 0.9 dB at 900 MHz 2 4 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

BFP181R

Contextual Info: BFP181R NPN Silicon RF Transistor
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP181R

infineon AN077

Abstract: BCR401R AN066 AN077 AN159 BCR402R BFP181R
Contextual Info: BCR401R LED Driver Features • LED drive current of 10mA 3 • Output current adjustable up to 60mA with external resistor 2 4 1 • Supply voltage up to 18V • Easy paralleling of drivers to increase current • Low voltage overhead of 1.2V • High current accuracy at supply voltage variation

BF5020

Abstract: BF5020R BF5020W BFP181
Contextual Info: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 2 4 • Integrated gate protection diodes 1 • Excellent noise figure • High gain, high forward transadmittance

Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain G2 G1 AGC RF Input RG1 RF Output + DC GND VGG

Contextual Info: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 4 • Integrated gate protection diodes 1 2 • Excellent noise figure • High gain, high forward transadmittance

Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC RF Input RG1 G2 G1 RF Output + DC GND VGG ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF5030. Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and 3 VHF-tuners with AGC function 2 4 • Supporting 5 V operations and 1 power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance

ST194

Abstract: BFP181R marking code g1s 3G1 transistor ST194E
Contextual Info: ST194E6716 Silicon N_Channel MOSFET Tetrode • Short-channel transistor 3 with high S / C quality factor 2 4 • For low-noise, gain-controlled 1 input stage up to 1 GHz • Pb-free RoHS compliant package1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V • Pb-free RoHS compliant package • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BF1005SR

Contextual Info: BF1005S. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BCR402R LED Driver
Supplies stable bias current even at low battery voltage
Low voltage drop of 0.75V
Ideal for stabilizing bias current of LEDs
Negative temperature coefficient protects LEDs against thermal overload 4 1 3 2 EHA07188 Type Marking BCR402R

Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BF1005

Abstract: BF1005R BF1005W BFP181 BFP181R
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input

TRANSISTOR mosfet BF998

Abstract: BF998 bf998 mosfet tetrode application note BF998 marking code BF998R BFP181 BFP181R 3G1 transistor
Contextual Info: BF998. Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!

sot143 marking code G2

Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
Contextual Info: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF2040W

Contextual Info: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040