BF502 Search Results

BF5020

Abstract: BF5020R BF5020W BFP181
Contextual Info: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 2 4 • Integrated gate protection diodes 1 • Excellent noise figure • High gain, high forward transadmittance

Contextual Info: BF5020. Silicon N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 4 • Integrated gate protection diodes 1 2 • Excellent noise figure • High gain, high forward transadmittance

AF4505

Abstract: transistor BF 502 Q U 31U transistor s250
Contextual Info: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .

transistor 502

Abstract: transistor BF 502 transistor BF 506 BF502
Contextual Info: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF

BF5020W

Abstract: BF5020 BF5020R BFP181 120K14 MOSFET BF5020W p 1S marking SOT143
Contextual Info: BF5020. Silicon N-Channel MOSFET Tetrode Preliminary data • Low noise gain controlled input stages of UHF- and 3 VHF - tuners with 3 V up to 5 V supply voltage 2 4 • Integrated gate protection diodes 1 • Excellent noise figure • Improved cross modulation at gain reduction

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

MPF102 spice model

Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Contextual Info: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

bf223

Abstract: PE210C BF311 PE210B 2SC1293 bfy88 BF330 nec RF package SOT89 2SC1260 BF497
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

TLE4957C

Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!

BF540

Abstract: BF-5000622 BF-5001222 BF-5002422 BF-5004822 BF-5010622 BF-5011222 BF-5014822 BF-5020622 2388
Contextual Info: FUTUREBUS FUTUREBUS CONNECTORS M a l e Ve r t i c a l P r e s s F i t 5 - R o w ● ● ● ● 5-Row. 2mm pitch permit high signal density Modular design guarantees flexibility Stackable end to end without loss of position Insertion tooling available. Contact Technical Sales

MRF472

Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293