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BF1005W Datasheets (1)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF1005W		Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF	255.57KB	5

BF1005W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF1005 Abstract: BF1005R BF1005W BFP181 BFP181R Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	bf1005 ot143 bf1005r ot143r +3bf1005w bfp181 bfp181r	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 eha07215 bf1005r bf1005w +3ot143 ot143r ot343	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 bf1005r ot143 ot143r	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 eha07215 bf1005r bf1005w +3ot143 ot143r ot343	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 eha07215 bf1005r bf1005w +3ot143 ot143r ot343	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 ot143 bf1005r ot143r +2bf1005w ot343	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	bf1005 ot143 bf1005r ot143r	PDF
BF1005 Abstract: BF1005R BF1005W Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	bf1005 eha07215 ot143 bf1005r +4ot143r bf1005w ot343 feb-18-2004	PDF