BF1005W Search Results

BF1005W Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF1005W		Infineon Technologies	Silicon N-Channel MOSFET Tetrode	Original	PDF	255.57KB	5

BF1005W Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BF1005 Abstract: BF1005R BF1005W BFP181 BFP181R Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005 BF1005R BF1005W BFP181 BFP181R	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. BF1005 BF1005R OT143 OT143R	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 BF1005R BF1005W* OT143 OT143R OT343 BF1005,	PDF
Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC RF Input G2 G1 RF Output + DC GND ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005W* OT343	PDF
BF1005 Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 Drain AGC RF Input	Original	BF1005. BF1005 OT143 BF1005R OT143R BF1005	PDF
BF1005 Abstract: BF1005R BF1005W Contextual Info: BF1005. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network Drain AGC HF Input G2 G1 GND HF Output + DC EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BF1005. EHA07215 BF1005 OT143 BF1005R OT143R BF1005W* OT343 Feb-18-2004 BF1005 BF1005R BF1005W	PDF