| BF998 |
|
Infineon Technologies
|
Single Non Biased; Package: PG-SOT143-4; ID (max): 30.0 mA; Ptot (max): 200.0 mW; gfs (typ): 24.0 mS; Gp (typ): 20.0 dB; F (typ): 1.8 dB; |
Original |
PDF
|
90.38KB |
9 |
| BF998 |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode |
Original |
PDF
|
91.97KB |
6 |
| BF998 |
|
Infineon Technologies
|
Silicon N-Channel MOSFET Tetrode in SOT-143 package. For low noise, gain controlled input stages up to 1GHz. |
Original |
PDF
|
76.58KB |
7 |
| BF 998 |
|
Infineon Technologies
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143 |
Original |
PDF
|
130.9KB |
7 |
| BF998 |
|
NXP Semiconductors
|
BF998 - Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS |
Original |
PDF
|
121.33KB |
15 |
| BF998 |
|
Philips Semiconductors
|
Silicon N-Channel MOSFET Tetrode |
Original |
PDF
|
77.78KB |
12 |
| BF998 |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
Original |
PDF
|
223.08KB |
9 |
| BF998 |
|
Siemens
|
Cross Reference Guide 1998 |
Original |
PDF
|
27.35KB |
7 |
| BF998 |
|
Siemens
|
RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
Original |
PDF
|
465.63KB |
37 |
| BF998 |
|
Siemens
|
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Original |
PDF
|
184.19KB |
8 |
| BF998 |
|
Vishay Telefunken
|
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
Original |
PDF
|
158.64KB |
9 |
| BF998 |
|
Vishay Telefunken
|
TRANS MOSFET N-CH 12V 0.03A 4SOT-143 |
Original |
PDF
|
223.35KB |
8 |
| BF998 |
|
Unknown
|
Shortform Datasheet & Cross References Data |
Short Form |
PDF
|
83.98KB |
1 |
| BF998 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
101.25KB |
1 |
|
|
| BF998 |
|
Unknown
|
Shortform IC and Component Datasheets (Plus Cross Reference Data) |
Short Form |
PDF
|
105.31KB |
1 |
| BF998 |
|
Unknown
|
Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
|
30.6KB |
1 |
| BF998 |
|
Philips Semiconductors
|
Silicon n-channel dual gate MOS-FET |
Scan |
PDF
|
220.51KB |
9 |
| BF998 |
|
Philips Semiconductors
|
Silicon N-Channel Dual Gate MOS-FET |
Scan |
PDF
|
290.75KB |
10 |
| BF998,215 |
|
NXP Semiconductors
|
BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-4, FET RF Small Signal |
Original |
PDF
|
121.33KB |
15 |
| BF998,215 |
|
NXP Semiconductors
|
Silicon N-channel dual-gate MOS-FETs - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 21 mS; Package: SOT143R (SC-61B); Container: Tape reel smd |
Original |
PDF
|
77.79KB |
12 |
