E6327
Abstract: Q67000-S220
Contextual Info: SIPMOS Small-Signal Transistor BSP 17 ● VDS 50 V ● ID 3.2 A ● RDS on 0.1 Ω ● N channel ● Enhancement mode ● Avalanche rated Type BSP 17 Ordering Code Tape and Reel Information Pin Configuration 1 2 3 4 Q67000-S220 G D S D E6327: 1000 pcs/reel
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Diode BAx
Abstract: E6327 Q67000-S280 DIN IEC 68-1
Contextual Info: SIEMENS BAX 280 FRED Diode Preliminary Data • • • VRRM 1000 V ^FRMS 5.5 A t„ 55 ns Soft recovery characteristics Type Ordering Code BAX 280 Q67000-S280 Pin Config uratio n Tape and Reel Information 1 2 3 4 E6327: 1000 pcs/reel not con A nected
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q67000-s280e6327ot-22350-hz+323sbdsdiode baxdin iec 68-1
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TH 298
Abstract: E6327 L6327
Contextual Info: BSP 298 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS th = 2.1 . 4.0 V • Pb-free lead plating; RoHS compliant Pin 1 G Pin 2 D Type Package Tape and Reel Information Marking BSP 298 P-SOT-223 E6327 BSP 298
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p-sot-223e6327pg-sot-223l6327+2ot-223th 298
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marking BAX
Abstract: BAX marking E6327 Q67000-S280 DIN IEC 68-1 Diode BAx
Contextual Info: FRED Diode BAX 280 Preliminary Data ● VRRM 1000 V ● IFRMS 5.5 A ● trr 55 ns ● Soft recovery characteristics Type Ordering Code Tape and Reel Information BAX 280 Q67000-S280 E6327: 1000 pcs/reel Pin Configuration 1 2 3 4 not con- A nected C A Marking
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q67000-s280e6327ot-22350-hz+4marking baxbax markingdin iec 68-1diode bax
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c 129 transistor
Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
Contextual Info: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel
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q67000-s073e6327ot-223c 129 transistor+3transistor c 129sipmosbsp129
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E6327
Abstract: E7941 Q62702-S612 Q67000-S221 STS SOT
Contextual Info: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 139 VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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Q67000-S067
Abstract: E6327 BSP296
Contextual Info: SIPMOS Small-Signal Transistor BSP 296 ● VDS 100 V ● ID 1A ● RDS on 0.8 Ω ● VGS(th) 0.8 V … 2.0 V ● N channel ● Enhancement mode ● Logic level Type Ordering Code Tape and Reel Information BSP 296 Q67000-S067 Pin Configuration E6327: 1000 pcs/reel
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STS 75 SOT23
Abstract: marking BSs sot23 E6327 Q62702-S612 STS SOT
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● VDS 250 V ● ID 0.04 A ● RDS on 100 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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q62702-s612e6327ot-23sts 75 sot23+2marking bss sot23sts sot
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Contextual Info: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327
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e7941
Abstract: Q67000-S221 E6327 Q62702-S612
Contextual Info: BSS 139 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 250 V ID 0.04 A RDS on 100 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 139 Q62702-S612 E6327: 3000 pcs/reel;
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deviation sheet
Contextual Info: BFP620 Deviation Sheet E6327 vs. E7764 NPN Silicon Germanium RF Transistor 3 High gain low noise RF transistor 4 Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications 2 Outstanding noise figure F = 0.7 dB at 1.8 GHz
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e6327e7764bfp620vps05605+2aug-01-2002deviation sheet
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deviation sheet
Abstract: BFP620 acs BFP620 applications note
Contextual Info: BFP620 Deviation Sheet E6327 vs. E7764 and L7764 NPN Silicon Germanium RF Transistor 3 High gain low noise RF transistor 4 Provides outstanding performance for a wide range of wireless applications Ideal for CDMA and WLAN applications 2 Outstanding noise figure F = 0.7 dB at 1.8 GHz
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e6327e7764l7764bfp620+5vps05605aug-01-2002deviation sheetbfp620 acsbfp620 applications note
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324 sot
Abstract: E6327 Q67000-S215
Contextual Info: SIPMOS Small-Signal Transistor BSP 324 ● VDS 400 V ● ID 0.17 A ● RDS on 25 Ω ● N channel ● Enhancement mode Type Ordering Code Tape and Reel Information BSP 324 Q67000-S215 Pin Configuration E6327: 1000 pcs/reel 1 2 3 4 G D S D Marking Package
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TRANSISTOR BSP 149
Abstract: sot 223 marking code BSP SIPMOS Q67000-S071 C 029 Transistor E6327 35GN
Contextual Info: BSP 149 SIPMOS Small-Signal Transistor ● VDS 200 V ● ID 0.48 A ● RDS on 3.5 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 149 Q67000-S071 E6327: 1000 pcs/reel
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q67000-s071e6327ot-223transistor bsp 149+4sot 223 marking code bspsipmosc 029 transistor35gn
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Q62702-S654
Abstract: E6327 Q67000-S284 k 1094 transistor
Contextual Info: SIPMOS Small-Signal Transistor BSP 125 ● VDS 600 V ● ID 0.12 A ● RDS on 45 Ω ● N channel ● Enhancement mode Type Ordering Code Tape and Reel Information Pin Configuration Marking BSP 125 Q62702-S654 E6327: 1000 pcs/reel BSP 125 Q67000-S284
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q62702-s654e6327q67000-s284ot-223+2e6433k 1094 transistor
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smd marking code ybs
Abstract: q67041-s1417 SP000082879 BSS84P E6327 marking YBs sot-23 YBs 98 BSS84P E6327 L6327 YBs 70
Contextual Info: BSS 84 P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated VDS RDS on ID -60 V 8 W -0.17 A PG-SOT-23 3 2 1 Type Package Ordering Code Marking BSS84P - E6327 PG-SOT-23
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pg-sot-23q67041-s1417bss84pl6327+8sp000082879e6327vps05161smd marking code ybsbss84p e6327marking ybs sot-23ybs 98ybs 70
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XPOSYS
Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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bgb707l7esd726-bgb707l7esde6327707l7esde6327+3xposysgermanium transistorx-gold
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bav99
Abstract: BAV-99S-E6327 bav99 infineon
Contextual Info: BAV99. Silicon Switching Diode • For high-speed switching applications • Series pair configuration • BAV99S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV99 BAV99W
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XPOSYS
Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.
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bfp640esdot343ot343-poot343-fp+14ot323-tp726-bfp640esde6327640esde6327xposysgummel poon model parameter hbtx-goldcolossusdiodes transistor marking k2 dualtrimblegermanium transistoragilent adssensonor2.4ghz lnb
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726-BGB741L7ESDE63
Abstract: MMIC marking code R bgb741l7esd e6327 BGB741L7 BGB741 GAIN/S21
Contextual Info: D a t a S h e e t , R e v . 1 . 0 , A p r i l 2 00 9 BGB741L7ESD E S D - R o b u s t a n d E a s y - T o - U s e B r o a d b a nd L N A MMIC RF & Protection Devices Edition 2009-04-17 Published by Infineon Technologies AG, 85579 Neubiberg, Germany Infineon Technologies AG 2009.
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bgb741l7esdcpsg9506726-bgb741l7esde63741l7esd+6e6327mmic marking code rbgb741l7esd e6327bgb741l7bgb741gain/s21
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bss84
Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking
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BSS284
Abstract: marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23
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E6327
Abstract: Q67000-S311
Contextual Info: SIEM ENS Mini Smart BSP 550 Prelim inary Data • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load
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Contextual Info: BSP 316 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level •'/GS th = -°-8 - - 2-0 V Type ^DS BSP 316 -100 V Type BSP 316 Ordering Code Q67000-S92 -0.65 A ^DS(on) Package Marking 2.2 Q SOT-223 BSP 316 Tape and Reel Information
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