SIPMOS Search Results

smd diode marking 271

Abstract: SIPMOS N-channel Small-Signal-Transistor
Contextual Info: BSP89 Rev. 2.1 SIPMOS Ò Small-Signal-Transistor Feature Product Summary • N-Channel VDS RDS on · Enhancement mode ID · Logic Level 240 V 6 W 0.35 A PG-SOT223 · dv/dt rated • Pb-free lead plating; RoHS compliant 4.5V rated lead plating; RoHS compliant

SPP80P06P H

Abstract: SPP80P06PH spp80p06p PG-TO22
Contextual Info: SPP80P06P H SIPMOS  Power-Transistor Features Product Summary • P-Channel • P-Channel Drain source voltage • Enhancement mode · Enhancement mode Drain-source on-state resistance • Avalanche rated · Avalanche rated Continuous drain current • dv/dt rated

BUZ30AH

Abstract: BUZ30a
Contextual Info: BUZ 30A H SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS on Package Pb-free BUZ 30A H 200 V 21 A 0.13 Ω PG-TO-220-3 Yes S Maximum Ratings

bss84

Abstract: BSS84 E6327 marking BSs sot23 siemens BSS84 siemens
Contextual Info: SIEMENS BSS84 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Pin 1 Pin 2 G Type BSS84 Vos -50 V Type BSS84 BSS84 Ordering Code Q62702-S568 Q67000-S243 b -0.13 A WDS(on) 10Q Pin 3 S Package Marking

SPD31N05

Contextual Info: SIEMENS SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS h RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 f ì P-T0252

BSP320

Contextual Info: SIEMENS BSP 320 S SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • W = 2-1 - 4 0 V Type Vos k) R DS on) Package BSP 320 S 60 V 2.9 A 0.12 Q SOT-223 Marking Ordering Code Q67000-S4001 Maximum Ratings Parameter Symbol

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

VPT09050

Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3

fr diode

Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V

BSP 76

Contextual Info: BSP 170 P SIEMENS Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated • dv/df rated Type BSP 170 P VDS 60 V b -1.9A ^DSioni 0.3 0 Package fS> VGS UGS = -1 0 V SOT-223 Ordering Code Q67041-S4018 Maximum Ratings , at Tj = 25°C, unless otherwise specified

bss 97 transistor

Abstract: ss 297 transistor
Contextual Info: SIEMENS BSS 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • '/GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 297 ^DS 200 V Type BSS 297 BSS 297 Ordering Code Q67000-S118 Q67000-S292 b 0.48 A ffDS<on) 2Q Pin 3 D Package

BSS284

Abstract: marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 284 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-1.6 V Pin 2 Pin 1 G Type Vbs BSS 284 -50 V Type BSS 284 Ordering Code Q62702-S299 b -0.13 A flbS(on} 100 Pin 3 D S Package Marking SOT-23

2SK1385-01

Abstract: n mosfet 1400 v
Contextual Info: 2SK1385-01 SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F A P - I I S E R I E S lOutline Drawings • Features • High speed sw itching • Lo w on-resistance • No second ary breakdow n • Lo w driving p o w er • High voltage • V GSs = ± 3 0 V G uarantee

Contextual Info: In fin eon SPD30P06P SPU30P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current

Contextual Info: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings

BUZ54

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3

Contextual Info: SIEMENS SIPMOS Power Transistor BUZ 53 A • N channel • Enhancement mode Type BUZ 53 A 1000 V /d Ä|js on Package 1> Ordering Code 2.5 A 5.0 n TO-204 AA C67078-A1009-A3 Maximum Ratings Parameter Symbol Continuous drain current r c = 25 'C íí 2.5 Pulsed drain current, Tc = 25 'C

s4025 equivalent

Abstract: Q67041-S4025
Contextual Info: Preliminary data BSO 215 C SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage • Drain-Source on-state Enhancement mode • Logic Level resistance • Avalanche rated Continuous drain current N P VDS

C67078-S3129-A2

Abstract: tp 312 transistor
Contextual Info: BUZ 312 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 312 1000 V 6A 1.5 Ω TO-218 AA C67078-S3129-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ104S

Abstract: 104S E3045 Q67040-S4007-A2 12J8
Contextual Info: BUZ 104S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175 ˚C operating temperature

BUZ36

Abstract: transistor buz 36 C67078-S1018-A2 din 982 SiEMENS PM 350 98 88 diode C160
Contextual Info: SIEM EN S SIPMOS Power Transistor BUZ 36 • N channel • Enhancement mode • Avalanche-rated Type VDS h ^O S {on Package 1> Ordering Code BUZ 36 200 V 22 A 0.12Í2 TO-204 AE C67078-S1018-A2 Maximum Ratings Parameter Symbol Continuous drain current, Tc = 33 “C

BSS97

Abstract: BSS 97 bss 97 transistor LC-R121R3P GPT05576 transistor bss
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor VDS I D = 200 V = 1 .5 A ^ D S o n • • • BSS 97 = 2.0 Q N channel Enhancement mode Package: TO-202 ’ > Not for new design! Type O rdering code for version in bulk • BSS 97 Q 62702-S463 Maxim um Ratings

DIODE S4 74

Abstract: s4 74 g1
Contextual Info: SIEMENS BUZ 100SL-4 Preliminary data SIPMOS Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type ^DS BUZ 100SL-4 55 V 7.4 A ffDS on Package Ordering Code 0.023 £1 P-DSO-28 C67078-S. . . . . . .

s4014

Abstract: Q67041-S4014 BSO 315 C
Contextual Info: Preliminary data BSO 315 C SIPMOS  Small-Signal-Transistor Features Product Summary • Dual N- and P -Channel Drain source voltage VDS • Drain-Source on-state Enhancement mode • Logic Level resistance • Avalanche rated Continuous drain current N