VPT09050
Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3
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spd08p06pspu08p06pvpt09050vpt09051+6p-t0252q67040-s4153-a2p-t0251-3-1q67040-s4154-a208p06ptransistor smd 352
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transistor marking smd 7c
Abstract: TRANSISTOR SMD MARKING CODE ag VPT09050 X7N60S5
Contextual Info: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 VPT09D51 • Avalanche rated • dWdf rated • 150°C operating temperature Type SPUX7N60S5 Vbs 600 V 1 2 3
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spux7n60s5spdx7n60s5vpt09d51vpt09050+5x7n60s5p-t0251-3-1p-t0252transistor marking smd 7ctransistor smd marking code ag
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VPT09050
Contextual Info: SIEMENS SPUX7N60S5 SPDX7N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09050 V P T 0905 1 • Avalanche rated • dv/dt rated • 150°C operating temperature Type SPUX7N60S5 ^bs 600 V 0.8 A
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spux7n60s5spdx7n60s5vpt09050x7n60s5+2p-t0251-3-1p-t0252
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VPT09050
Abstract: VPT09051
Contextual Info: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A
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spux5n60s5spdx5n60s5vpt09051vpt09050+3x5n60s5p-t0251-3-1p-t0252
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Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A
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spd02n60spu02n60vpt09050p-t0252+3q67040-s4133p-t0251q67040-s4127-a2
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VPT09051
Abstract: transistor ag qs VPT09050
Contextual Info: SIEMENS SPUX2N60S5 SPDX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type SPUX2N60S5 Vds 600 V to 4.5 A
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spux2n60s5spdx2n60s5vpt09051vpt09050+4x2n60s5p-t0251-3-1p-t0252transistor ag qs
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P-T0251
Abstract: spd08n
Contextual Info: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.
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spd08n10spu08n10p-t0252p-t0251+2q67000-spd08n
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Siemens DIODE E 1220
Abstract: VPT09050
Contextual Info: SPD28N03L SPU28N03L SIEMENS SIPMOS Power Transistor • N-Channel /X • Enhancement mode • Avalanche rated VPT09050 VPT09051 • Logic Level • dvld t rated • 175°C operating temperature Type ^DS b SPD28N03L 30 V 28 A SPU28N03L ffDS on (5) VGS
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spd28n03lspu28n03lvpt09050vpt09051+5p-t0252q67040-s4139-a2p-t0251q67040-s4142-a2siemens diode e 1220
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SPUX3N60S5
Abstract: on semiconductor marking code dpack VPT09050
Contextual Info: SIEM EN S SPUX3N60S5 SPDX3N60S5 Target data sheet Cool MOS Power Transistor • Worldwide best ffos 0n> in D-Pack • N-Channel • Enhancement mode VPT09D51 VPT09050 • Ultra low gate charge • Avalanche rated • d v/d t rated 1 2 3 • 150°C operating temperature
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spux3n60s5spdx3n60s5vpt09d51vpt09050+4x3n60s5p-t0251-3-1p-t0252on semiconductor marking code dpack
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Diode smd code sm 97
Abstract: VPT09051 SPD09P06PL SPU09P06PL Q67042-S4020 VPT09050
Contextual Info: Infineon SPD09P06PL SPU09P06PL Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage '/ ds -60 V • Enhancement mode Drain-source on-state resistance ^DS on 0.25 Q • Avalanche rated Continuous drain current
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spd09p06plspu09p06plvpt09050vpt09051+5p-t0252q67042-s4007p-t0251-3-1q67042-s4020diode smd code sm 97
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