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SPU02N60 Datasheets (14)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPU02N60	Siemens	Sipmo Power Transistor	Original	PDF	85.47KB	9
SPU02N60	Siemens		Original	PDF	1.09MB	7
SPU02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPU02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF	164.83KB	11
SPU02N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF	297.77KB	12
SPU02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	147.1KB	13
SPU02N60C3BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A IPAK	Original	PDF	619.96KB
SPU02N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF	124.82KB	9
SPU02N60S5	Infineon Technologies	Cool Mos Power Transistor	Original	PDF	253.15KB	10
SPU02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; V_DS (max): 600.0 V; Package: IPAK (TO-251); R_DS(ON) @ T_J=25Â°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25Â°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF	727.13KB	11
SPU02N60S5	Infineon Technologies	Cool MOS Power Amp., 600V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF	263.7KB	10
SPU02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPU02N60S5BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-251	Original	PDF	714.96KB
SPU02N60S5XK	Infineon Technologies	SPU02N60 - 600V COOLMOS N-CHANNE	Original	PDF	903.99KB

SPU02N60 Price and Stock

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Rochester Electronics LLC SPU02N60S5BKMA1 POWER FIELD-EFFECT TRANSISTOR, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60S5BKMA1	Bulk	23,717		296	1 - 10 - 100 - 1000 $1.01 10000 $1.01	Buy Now
Infineon Technologies AG SPU02N60C3BKMA1 MOSFET N-CH 650V 1.8A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60C3BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.56	Buy Now
Avnet Americas	SPU02N60C3BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	SPU02N60C3BKMA1	Bulk			1	1 $1.81 10 $1.64 100 $1.33 1000 $0.94 10000 $0.89	Buy Now
EBV Elektronik	SPU02N60C3BKMA1			40 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vyrian	SPU02N60C3BKMA1		5,130			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPU02N60S5BKMA1 MOSFET N-CH 600V 1.8A TO251-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPU02N60S5BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 $0.47	Buy Now
Verical ()	SPU02N60S5BKMA1		21,000		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		2,970		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		1,493		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		1,117		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
Rochester Electronics	SPU02N60S5BKMA1		26,580		1	1 - 10 - 100 $0.81 1000 $0.67 10000 $0.60	Buy Now
Vyrian	SPU02N60S5BKMA1		9,743			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPU02N60C3 POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 600V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPU02N60C3		429			1 $0.81 10 $0.81 100 $0.49 1000 $0.38 10000 $0.38	Buy Now
Others SPU02N60S5 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SPU02N60S5		6,300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SPU02N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5	PDF
SP*02N60 Abstract: transistor smd hq Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3	PDF
DD35 Abstract: 02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5	PDF
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 02N60S5 smd 0306 package 02N60	PDF
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5	PDF
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42	PDF

02N60C3 Abstract: SPD02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3	PDF
02N60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60	PDF
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2	PDF
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5	PDF
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE	PDF
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5	PDF
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5	PDF
02N60C3 Abstract: 02n60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02n60	PDF

SPU02N60 Search Results

SPU02N60 Datasheets (14)

SPU02N60 Price and Stock

Rochester Electronics LLC SPU02N60S5BKMA1

Infineon Technologies AG SPU02N60C3BKMA1

Infineon Technologies AG SPU02N60S5BKMA1

Infineon Technologies AG SPU02N60C3

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