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SPD02N60 Datasheets (12)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPD02N60	Siemens		Original	PDF	1.09MB	7
SPD02N60	Siemens	SIPMO Power Transistor	Original	PDF	85.47KB	9
SPD02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPD02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A	Original	PDF	164.83KB	11
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	147.1KB	13
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	297.76KB	12
SPD02N60C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK	Original	PDF	619.96KB
SPD02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 600.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25Â°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25Â°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF	727.13KB	11
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	263.71KB	10
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	253.15KB	10
SPD02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPD02N60S5BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252	Original	PDF	714.96KB

SPD02N60 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPD02N60S5BTMA1 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPD02N60S5BTMA1		12,500		656	1 - 10 - 100 - 1000 $0.53 10000 $0.47	Buy Now
	SPD02N60S5BTMA1		870		656	1 - 10 - 100 - 1000 $0.53 10000 $0.47	Buy Now
Rochester Electronics	SPD02N60S5BTMA1		13,370		1	1 - 10 - 100 $0.51 1000 $0.42 10000 $0.38	Buy Now
Infineon Technologies AG SPD02N60C3 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPD02N60C3		1,253			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SPD02N60C3		1,190			1 $2.79 10 $2.79 100 $2.79 1000 $1.05 10000 $1.05	Buy Now
ComSIT USA	SPD02N60C3		445			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD02N60C3		47,320			1 - 10 - 100 - 1000 $0.41 10000 $0.37	Buy Now
Infineon Technologies AG SPD02N60S5 Trans MOSFET N-CH 600V 1.8A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPD02N60S5		292			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SPD02N60S5		1,340			1 $1.74 10 $1.74 100 $1.74 1000 $0.70 10000 $0.61	Buy Now
Chip 1 Exchange	SPD02N60S5		19			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD02N60C3BTMA1 MOSFET N-Channel 600V 1.8A (Tc) TO-252-3 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	SPD02N60C3BTMA1		6		1	1 - 10 - 100 $0.51 1000 $0.42 10000 $0.38	Buy Now
Vyrian	SPD02N60C3BTMA1		8,012			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD02N60C3BTMA1		47,318			1 - 10 - 100 - 1000 $0.41 10000 $0.37	Buy Now

SPD02N60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	spd02n60 spu02n60 p-to252 p-to251 +3q67040-s4133 q67040-s4127-a2 sp*02n60	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 gpt09051 02n6	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 02n60s5 02n60	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251 +2q67040-s4226 02n60s5	PDF
SP*02N60 Abstract: transistor smd hq Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	spd02n60 spu02n60 p-t0251 q67040-s4133 +5q67040-s4127-a2 p-t0252 135ical sp*02n60 transistor smd hq	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu02n60s5 spd02n60s5 p-to251-3-1 q67040-s4226 +5p-to252 q67040-s4213 02n60s5 gpt09051 transistor 02n60s5	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
DD35 Abstract: 02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 dd35	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +5p-to252 02n60s5 q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 q67040-s4213 02n60s5 smd 0306 package 02n60	PDF
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +2q67040-s4226 02n60s5	PDF
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 eas50 diode marking code 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +8q67040-s4226 02n60s5 transistor 02n60s5 02n60 pg-to252-3-11 transistor smd marking code transistor smd marking code 1a transistor smd marking code 42	PDF

02N60C3 Abstract: SPD02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
02N60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	spd02n60 spu02n60 vpt09050 p-t0252 +3q67040-s4133 p-t0251 q67040-s4127-a2	PDF
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +402n60s5 q67040-s4226 p-to252 02n6	PDF
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-t0251 +402n60s5 q67040-s4226 p-t0252 smd transistor marking 02n	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 marking code v6 73 diode	PDF
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +6spux5n60s5/spdx5n60s5 q67040-s4226 02n60s5 02n60 diode marking code 623 smd diode 44a	PDF
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +502n60s5 q67040-s4226 p-to252 02n6 diode marking code 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 02n60s5 transistor 02n60s5 02n60 02n60s	PDF
02N60C3 Abstract: 02n60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF

SPD02N60 Search Results

SPD02N60 Datasheets (12)

SPD02N60 Price and Stock

Infineon Technologies AG SPD02N60S5BTMA1

Infineon Technologies AG SPD02N60C3

Infineon Technologies AG SPD02N60S5

Infineon Technologies AG SPD02N60C3BTMA1

SPD02N60 Datasheets Context Search

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