d2422
Abstract: P-TO252 SPD08N10 SPU08N10
Contextual Info: SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Ω P-TO252 Q67000-. . . - . . SPU08N10 100 V 8.4 A
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spd08n10spu08n10p-to252q67000-+3p-to25123/jan/1998d2422
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P-T0251
Abstract: spd08n
Contextual Info: SIEMENS SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel n. • Enhancement mode x • Avalanche-rated 1 2 ^ cr VPT09050 Pin 1 G Pin 2 Pin 3 D S Type ^DS fc *DS(on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Q, P-T0252 Q67000-.
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spd08n10spu08n10p-t0252p-t0251+2q67000-spd08n
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8
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615nvbsp318sbuz mosfetmosfet buz 326+8buz mosfet 334spd14n05mosfet buz 349mosfet buz 90abuz 100 mosfetbup202buz mosfet 102sbuz mosfet 111s
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620
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08N10
Abstract: P-TO252 SPD08N10 SPU08N10 A16H
Contextual Info: Preliminary Data SPD 08N10 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated
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08n10spd08n10p-to252q67040-s4126-a2+4spu08n10p-to251q67040-s4118-a2a16h
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Contextual Info: SPD 08N10 I nf ine on te ch no lo g iai Preliminary Data S IP M O S P o w e r T ra n s is to r Product Summary Features Drain source voltage • N channel Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated
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08n10spd08n10p-t0252q67040-s4126+6spu08n10p-t0251q67040-s4118-a2s35bq5q133777sqt-89
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BUZ MOSFET
Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package
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615nvot-22320iemensb152-h6493-g5-x-7600+10buz mosfetmosfet buz 326bup 312bss 130bup 304bup 313615n60buz 840sgu06n60bup 307d
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BUZ90af
Abstract: hv82 MGF4919G-01 MGF4919G MGF2407A-01 BUZ80AF1 6n60 MGF1302-15 SSP 50N06 2n10l
Contextual Info: МИКРОСХЕМЫ 1 ПОЛЕВЫЕ ТРАНЗИСТОРЫ ИМПОРТНЫЕ Наименование 2SJ 103 2SJ 200 2SJ 306 2SJ 307 2SJ 449 2SJ 79 2SK 1023 2SK 1058 2SK 1060 2SK 107 2SK 1082 2SK 1102 2SK 1117 2SK 1118 2SK 1120 2SK 1162 2SK 118 2SK 1198
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o-251aao-247aco-220abpowerso-20+10buz90afhv82mgf4919g-01mgf4919gmgf2407a-01buz80af16n60mgf1302-15ssp 50n062n10l
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P-TO252
Abstract: SPD08N10 SPU08N10
Contextual Info: SPD 08N10 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 100 V • Drain-Source on-state resistance RDS on 0.3 Ω Continuous drain current ID 8.4 A Enhancement mode • Avalanche rated • dv/dt rated
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08n10spd08n10p-to252q67040-s4126+3spu08n10p-to251q67040-s4118-a2
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