2SJ419 Search Results
2SJ419 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| 2SJ419 | Sanyo Semiconductor | Ultrahigh-speed switching | Original | 101KB | 4 | ||
| 2SJ419 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| 2SJ419 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 111.2KB | 1 | ||
| 2SJ419 | Sanyo Semiconductor | Ultra High Speed Switching MOSFET | Scan | 187.23KB | 1 | ||
| 2SJ419 | Sanyo Semiconductor | Medium Power Output MOSFETs | Scan | 512.11KB | 3 |
2SJ419 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
2SJ419Contextual Info: Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SJ419] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0 |
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en5313a2sj419 | |
DC11-4
Abstract: 2SJ419 ITR00524 ITR00525 ITR00526 ITR00527 ITR00528 ITR00529 ITR00530
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Original |
2sj4191200mm2itr00531itr00530+9 | |
2SJ419
Abstract: qa25 x1cv
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OCR Scan |
en5313a2sj4191200mm2qa25+1 | |
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Contextual Info: Ordering number:EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SJ419] 5 4 3 : Source 4 : Gate 5 : Drain 6 : Drain |
Original |
en5313a2sj419 | |
2SK2153
Abstract: 2SJ332S
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2sj3812sj3822sj3832sj419+8 | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
IRF 850 mosfet
Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
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sc-63t0-126lpt0-220cit0-220ml+16 | |
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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device2176r14153cr108/dirf9310+9 | |
2SK2637Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV |
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2sj3162sj3352sj381fx207+7 | |
FW201
Abstract: 2SJ469
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2sk2557fw103fw201fw202+7 | |
2sk3436
Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
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tnd023ffx504cph5504mch5805+16 | |
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Contextual Info: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3 |
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2sj381fx2072sj3822sj383+6 | |
2SJ468
Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
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2sji882sj1892sj1912sj192+9 | |
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