FW202 Search Results

FW202

Contextual Info: Ordering number : EN5318A N-Channel Silicon MOSFET FW202 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting.

FW202

Contextual Info: Ordering number : EN5318A N-Channel Silicon MOSFET FW202 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance • Ultrahigh-speed switching. unit: mm • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting.

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

2SJ437

Abstract: 2SK244
Contextual Info: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

FW201

Abstract: 2SJ469
Contextual Info: il- i •*'iti i -*•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

2SK1731

Abstract: 2SK2637 2SK1871 2SK2626 2sk2636 2SK2438 2SK2153 2sk2406 2SK1474 2SK1920
Contextual Info: Continued from previous page Absolute maximum ratings Applications M VGSS Id V (A) (W) VDSS Electrical characteristics (Ta • 25 C ) RDSCmO @ ID PD Teh (1C) VGSS (off) (V) ID ■V6S ves (V) & |Yfs| 0 VDS ' ID slif Type Mo. Package type (A) 2SK1474 TP Ultrahigh-speed switching

Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

6HN04MH

Abstract: 3LN02M 3LN04MH 3LP02M 3LP04MH 5HN02M 5HP02M 5LN02M 5LP02M 6HP04MH
Contextual Info: Ordering number : E I 0 0 4 2 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis or discontinued.

FW406

Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

FW407

Abstract: FW509 MT28F128J3RG-15 ET flash fw206 fw406 sus material 304 FQ510 fw209 MT28F128J3 MT28F320J3
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)