1000MM2 Search Results

Contextual Info: 2SK3535-01 500 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E AV =f(starting Tch):Vcc=48V,I(AV)<=25A Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch):Vcc=48V 2SK3535-01 FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET

2SK244

Abstract: 49842 2SK2441 25K24
Contextual Info: Ordering number: EN 4984A 2SK2441 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features •Low ON resistance. ■Ultrahigh-speed switching. • 2.5V drive. A bsolute M axim um R atings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage

smd transistor 26

Abstract: KTS2005
Contextual Info: IC IC SMD Type Liquid Crystal Display Backlight Drive Applications KTS2005 TSSOP-8 Unit: mm Features Low ON resistance. Ultrahigh-speed switching. Mounting height 1.1mm. 1,5,8: Drain 2,3,6,7: Source 4: Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit

SC70-8

Abstract: TSOT-23 junction case 3008 so8 lt08 1388A IC OP AMP for piezoelectric microphone LT3008 3008 LT3008EDC LT3008ETS8
Contextual Info: LT3008 3µA IQ, 20mA, 45V Low Dropout Linear Regulator FEATURES DESCRIPTION n The LT 3008 is a micropower, low dropout voltage LDO linear regulator. The device supplies 20mA output current with a dropout voltage of 300mV. No-load quiescent current is 3 A. Ground pin current remains at less than 5% of

KTD2005

Contextual Info: IC IC SMD Type Ultrahigh-Speed Switching Applications KTD2005 TSSOP-8 Unit: mm Features Low ON resistance. 2.5V drive. Mounting height 1.1mm. Composite type, facilitating high-density mounting. 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2

lift control

Abstract: FF-PSZS1030 rubber detection
Contextual Info: FF-SM SERIES CHART 1 M FF-SM - FIBER OPTIC C A B L E LENGTH: 5:5 m SPECIFICATIONS L COATING: 1. ALUMINIUM BULB PLATE 2. NITRILE BUTADIENE RUBBER DIMENSIONS: 075050: 750 X 500m m 2 / 100050: 1000 x 500m m 2 / 150050: 1500 x 500m m 2 / 075075: 7 50 x 750m m 2 /

Contextual Info: Ordering number : ENA2243 ECH8697R N-Channel Power MOSFET 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance • 2.5V drive • Common-Drain Type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch

LT3080Q

Abstract: RS/3080 ic 8 pin 3080 ic 8 pin lt3080iq 11AIl 3080 MARKING ltcbm
Contextual Info: LT3080 Adjustable1.1A Single Resistor Low Dropout Regulator Description Features Outputs May be Paralleled for Higher Current and Heat Spreading n Output Current: 1.1A n Single Resistor Programs Output Voltage n 1% Initial Accuracy of SET Pin Current n Output Adjustable to 0V

Contextual Info: i T u v m _ LT1762 Series TECHNOLOGY 150mA, Low Noise, LDO M icropower Regulators F€flTUR€S D C S C R IP TIO n • ■ ■ ■ ■ The LT 1762 series are micropower, low noise, low dropout regulators. The devices are capable of supplying 150mA of output cu rrent with a dropout voltage of 300mV.

diode FR 105

Abstract: 2SK3613-01
Contextual Info: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof

SAE AS33671

Abstract: SAE AS33681 AS23190 AS33681 AS33671 mixer ems 505 MS90387-1 SAE AS23190 POLYOL foam density 94v-0 lcd display
Contextual Info: Cable Ties/Wiring Accessories Catalog—WW-CTCB03 replaces SA-101N275C-WC Table of Contents Cable Ties and Installation Tooling Available Styles PAN-TY Locking Cable Ties, Locking Lashing Ties, Releasable Ties, Releasable Lashing Ties, Clamp Ties, Marker and Flag Ties, Winged Push Mount Ties, Push Mount Ties,

A1324

Abstract: a1324 application note D7010 FTD7010
Contextual Info: FTD7010 Ordering number : ENA1324 SANYO Semiconductors DATA SHEET FTD7010 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • 1.8V drive. Mount heigt 1.1mm. Coposite type, facilitating high-density mounting. Specifications

3090F

Contextual Info: LT3090 –36V, 600mA Negative Linear Regulator with Programmable Current Limit Description Features n n n n n n n n n n n n n n n n n Output Current: 600mA Single Resistor Sets Output Voltage 50µA SET Pin Current: ±1% Initial Accuracy Programmable Current Limit

LT1964-BYP

Abstract: LT1964 BYP LT1964 LT1761 LT1964ES5-5 LT1964ES5-BYP LT1964ES5-SD LT1964BYP
Contextual Info: LT1964 200mA, Low Noise, Low Dropout Negative Micropower Regulator in ThinSOT U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Profile 1mm ThinSOTTM Package Low Noise: 30µVRMS (10Hz to 100kHz) Low Quiescent Current: 30µA Low Dropout Voltage: 340mV

G1347

Abstract: D45H11 LT1573 LT1573C LT1573CS8 LT1573I LT1573IS8
Contextual Info: LT1573 Low Dropout PNP Regulator Driver U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1573 is a regulator driver IC designed to provide a low cost solution for applications requiring high current, low dropout and fast transient response. When combined

LT1963

Abstract: LT1963A LT1963A-X 963A33 LT1963AES8-3.3 LT1963AEQ LT1963AET 10000U
Contextual Info: LT1963A Series 1.5A, Low Noise, Fast Transient Response LDO Regulators U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Optimized for Fast Transient Response Output Current: 1.5A Dropout Voltage: 340mV Low Noise: 40mVRMS 10Hz to 100kHz

DAC IC 0804

Abstract: LT3071EUFD 4.7uF 110V X7R
Contextual Info: LT3071 5A, Low Noise, Programmable Output, 85mV Dropout Linear Regulator with Analog Margining Features n n n n n n n n n n n n n n n n n Description Output Current: 5A Dropout Voltage: 85mV Typical Digitally Programmable VOUT : 0.8V to 1.8V Analog Output Margining: ±10% Range

D1498TS

Abstract: TA1283 FW213
Contextual Info: Ordering number:EN5908 P-Channel Silicon MOSFET FW213 DC-DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2129 [FW213] 5 4 Specifications 0.595 1.27 0.43 0.1 1.5 5.0 1:Source1 2:Gate1 3:Source2 4:Gate2 5:Drain2

FR 309 diode

Contextual Info: 2SK3535-01 FUJI POWER MOSFET 200304 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern

Contextual Info: TND524VS Ordering number : EN9053 SANYO Semiconductors DATA SHEET TND524VS ExPD Excellent Power Device Single-phase High Side Drive Application Features • • • • Single-phase high side drive Allows simplified configuration of driver circuit Fully compatible input to LSTTL/CMOS

Contextual Info: SBS811 Ordering number : ENN8254 SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers . Features • • Small Switching noise. Low forward voltage (IF=2A, VF max=0.40V).

vec8

Contextual Info: SBS811 Ordering number : EN8254A SANYO Semiconductors DATA SHEET SBS811 Schottky Barrier Diode 30V, 2.0A Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • Small Switching noise Low forward voltage (IF=2A, VF max=0.40V)

ic 74373

Abstract: 74371 IC 74374 74372
Contextual Info: TND027SW, 027TD Ordering number : EN7437B SANYO Semiconductors DATA SHEET TND027SW TND027TD ExPD Excellent Power Device Lowside Power Switch Lamp-, Solenoid-, and Motor-Driving Applications Features • • • • • N-channel MOSFET built in. Overheat protection. (Self recovery type)

Contextual Info: LT3021/LT3021-1.2/ LT3021-1.5/LT3021-1.8 500mA, Low Voltage, Very Low Dropout Linear Regulator DESCRIPTION FEATURES n n n n n n n n n n n n n n VIN Range: 0.9V to 10V Dropout Voltage: 160mV Typical Output Current: 500mA Adjustable Output VREF = VOUT(MIN = 200mV)