FW201 Search Results

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

w201 mosfet

Abstract: FW201
Contextual Info: FW 201 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, N channel MOSFET in one package.

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

FW201

Abstract: FW203 LA5621M LA5621V MFP14 SSOP16
Contextual Info: Ordering number :EN5640A Monolithic linear IC LA5621M, 5621V Lithium-Ion Battery Charge Control IC Overview The LA5621M and LA5621V are external charge control ICs for lithium-ion batteries. These ICs are ideally suited for on/off control of external power MOSFETs in systems

IRF9310

Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional

2SJ437

Abstract: 2SK244
Contextual Info: il ucakon Examples lUsing a Schotfky Barner diode AC a d a p te r Using a power MOSFET) ; •>- - ■►! — ■-* A C a d a p te r o u tp u t o - o u tp u t Battery Battery ■ Device Lineup ♦ Schottky Barrier Diodes Package SB20W03P PCP SB40W03T TP-FA

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

FW201

Abstract: 2SJ469
Contextual Info: il- i •*'iti i -*•» ■ Overview ^R H p r Currently, portable information equipment such as notebook computers, video cam eras and portable telephones are rapidly o e c e r ig more compact and lightweight. In particular, iarge-capacity, high-performance battery-pack supplies nave become essential. S A N Y O -;as

smoke detection using microcontroller

Contextual Info: Ordering number :EN5640A Monolithic linear IC LA5621M, 5621V Lithium-Ion Battery Charge Control IC Overview The LA5621M and LA5621V are external charge control ICs for lithium-ion batteries. These ICs are ideally suited for on/off control of external power MOSFETs in systems

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

KSS-210A

Abstract: KSS210A sanyo SF90 SH1106 SOAD70A KSS150A PEA1030 KSS210B SOALP1200 cdm12.1
Contextual Info: Manufacturer Model Pickup AIWA CAB500 KSS150A AIWA CADW500 KSS150A AIWA CNX400 KSS210A AIWA CSDEX1 KSM2101BA AIWA CSDEX1 KSS210B AIWA CSDEX210 KSM2101BA AIWA CSDEX210 KSS210B AIWA CSDEX310 KSM2101BA AIWA CSDEX310 KSS210B AIWA CVDZ93W KSS150A AIWA CX810Z KSS210A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

Contextual Info: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3

fw209

Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。

FW406

Abstract: FW509 FW407 MT28F128J3FS-12 MET MT28F640J3RG-12 MT28F128J3RG-15ET flash fw206 FW206 MT28F128J3RG-15 FW510
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY TM MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

FW407

Abstract: FW509 MT28F128J3RG-15 ET flash fw206 fw406 sus material 304 FQ510 fw209 MT28F128J3 MT28F320J3
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3, MT28F640J3, MT28F320J3 TM Q-FLASH MEMORY Features Figure 1: 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)