2SJ383 Search Results

2SJ382

Abstract: 2SJ383
Contextual Info: Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B [2SJ383] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 0.8

144MQ

Abstract: Ib23 2SJ383
Contextual Info: O rd e rin g num ber: EN 5297A 2SJ383 N0.5297A SMtYO i P-Channel MOS Silicon FET Ultrahigh-Speed Switching Applications Features • Low ON resistance. • Ultrahigh-speed switching. • 2.5V drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage

2SJ382

Abstract: 2SJ383
Contextual Info: Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2083B [2SJ383] 2.3 1.5 6.5 5.0 0.5 5.5 7.0 4 1.2 7.5 1.6 0.8

2SK2153

Abstract: 2SJ332S
Contextual Info: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^

2SJ383

Abstract: ITR00485 ITR00486 ITR00487 ITR00488 ITR00489
Contextual Info: 注文コード No. N 5 2 9 7 A 2SJ383 No. 5 2 9 7 A 52599 新 開発速報 No. ※ 5297 とさしかえてください。 2SJ383 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

2SK2637

Contextual Info: • LD Series Lineup Type No. Package V OSS * * - V (V) *0 o Pd m Electrical characteristics at Ta = 25°C « tm » 'iifflP. Absolute maximum 1 VDss = 12 V, P-channel m Vostofl) min to max M 2SJ316 2SJ335 1.0 ±15 PCP ±10 XP5 FX601 XP6 ±15 Vg s = 4V VfigstOV

2sk3436

Abstract: 2Sa1872 2sc6093 2SC4943 2sa1970 2SK3850 2SK1597 TT2084 2sc5267 2sk3744
Contextual Info: Ordering number : E I 0 1 3 8 Announcement Regarding Discontinuation and Limited Availability of Discrete Devices Thank you for using SANYO semiconductor products. The following SANYO semiconductor products will be available to existing customers on a limited basis

Contextual Info: • Overview Currently, battery-operated portable equipment sucn as notebook computers, portable telephones, video cameras n office a ./'j :v -■ equipment and AV equipment are becoming increasingly common. Accordingly, many devices are required witn low-voltage C" ve:- ar 3

2SJ468

Abstract: 2SJ191 2SJ271 2SJ260 2SJ189 2SJ192 2SJ194 2SJ195 2SJ281 2SJ336
Contextual Info: Continued from previous page Electrical characteristics Ta = 25 V Absolute maximum ratings Type No. Package type Applications Rds(<w) @ Id •VGS VOSS (V) VGSS (V) ID (A) PD (W) Tdi OC) |Yfi|@ VDS ■ID RDS(mi) max(Q) Id (A) VGS (V) JA VDS (V) (A) 2S JI8 8

2sk3436

Abstract: 2sc6093 2Sa1872 2SK1597 2SK3850 2SC5269 TT2084 2SC4943 2SC5793 2sa1970
Contextual Info: 注文コード No. I 0 1 3 8 ディスクリートデバイス製品 保守品・廃止品に関するお知らせ いつも半導体製品をご使用いただきまして誠にありがとうございます。 このたび、下記三洋半導体製品を保守品または廃止品と致します。