Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    bfp620 Datasheets

    bfp620 datasheet (30)

    Part ECAD Model Manufacturer Description Type PDF
    BFP620 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP620 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP620 Infineon Technologies SiGe70 GHz RF-Bipolar NPN Type Transistors Original PDF
    BFP620 Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-SOT343-4; VCEO (max): 2.3 V; IC(max): 80.0 mA; Ptot (max): 185.0 mW; fT (typ): 65.0 GHz; F (typ): 0.7 dB; Original PDF
    BFP620 Infineon Technologies NPN Silicon Germanium RF Transistor, high gain low noise RF transistor Original PDF
    BFP 620 Infineon Technologies SiGe70 GHz RF-Bipolar NPN Type Transistors Original PDF
    BFP620 Unknown Shortform Transistor Datasheet Guide Scan PDF
    BFP620 Unitra Cemi Transistor Scan PDF
    BFP620E6327 Infineon Technologies TRANS GP BJT NPN 2.3V 0.08A 4 Original PDF
    BFP620E6359 Infineon Technologies TRANS GP BJT NPN 2.3V 0.08A 4 Original PDF
    BFP620E6806 Infineon Technologies TRANS GP BJT NPN 2.3V 0.08A 4 Original PDF
    BFP620_E7764 Infineon Technologies TRANS GP BJT NPN 2.3V 0. Original PDF
    BFP620E7764 Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP620E7764 Infineon Technologies RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR RF NPN 2.3V SOT-343 Original PDF
    BFP620E7764BTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANSISTOR RF NPN 2.3V SOT-343 Original PDF
    BFP620F Infineon Technologies NPN Silicon Germanium RF Transistor Original PDF
    BFP620F Infineon Technologies NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in NEW thin small flatlead package TSFP-4 Original PDF
    BFP620F Infineon Technologies Si, SiGe RF Transistors, fT = 24 to 70 GHz; Package: PG-TSFP-4; VCEO (max): 2.3 V; IC(max): 80.0 mA; Ptot (max): 185.0 mW; fT (typ): 65.0 GHz; F (typ): 0.7 dB; Original PDF
    BFP620F Infineon Technologies SiGe70 GHz RF-Bipolar NPN Type Transistors Original PDF
    BFP 620F Infineon Technologies SiGe70 GHz RF-Bipolar NPN Type Transistors Original PDF
    SF Impression Pixel

    Search Stock

    Infineon Technologies AG BFP620H7764XTSA1

    RF TRANS NPN 2.8V 65GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP620H7764XTSA1 Reel 9,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.21001
    Buy Now
    BFP620H7764XTSA1 Cut Tape 3,942 1
    • 1 $0.63
    • 10 $0.543
    • 100 $0.4055
    • 1000 $0.24622
    • 10000 $0.24622
    Buy Now
    BFP620H7764XTSA1 Digi-Reel 1
    • 1 $0.63
    • 10 $0.543
    • 100 $0.4055
    • 1000 $0.24622
    • 10000 $0.24622
    Buy Now
    Avnet Americas BFP620H7764XTSA1 Reel 4 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27963
    Buy Now
    New Advantage Corporation BFP620H7764XTSA1 90,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6194
    Buy Now

    Infineon Technologies AG BFP620FH7764XTSA1

    RF TRANS NPN 2.8V 65GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP620FH7764XTSA1 Cut Tape 1,757 1
    • 1 $0.62
    • 10 $0.527
    • 100 $0.3934
    • 1000 $0.23883
    • 10000 $0.23883
    Buy Now
    BFP620FH7764XTSA1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.20371
    Buy Now
    BFP620FH7764XTSA1 Digi-Reel 1
    • 1 $0.62
    • 10 $0.527
    • 100 $0.3934
    • 1000 $0.23883
    • 10000 $0.23883
    Buy Now
    Avnet Americas BFP620FH7764XTSA1 Reel 12 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27125
    Buy Now
    Chip1Stop BFP620FH7764XTSA1 Cut Tape 2,044 5
    • 1 -
    • 10 $0.288
    • 100 $0.218
    • 1000 $0.186
    • 10000 $0.186
    Buy Now
    New Advantage Corporation BFP620FH7764XTSA1 24,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6
    Buy Now

    Rochester Electronics LLC BFP620E7764

    RF BIPOLAR TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP620E7764 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Infineon Technologies AG BFP 620F E7764

    RF TRANS NPN 2.8V 65GHZ 4TSFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP 620F E7764 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.35114
    Buy Now

    Infineon Technologies AG BFP620E7764BTSA1

    RF TRANS NPN 2.8V 65GHZ SOT343-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BFP620E7764BTSA1 Cut Tape 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.87
    • 1000 $0.87
    • 10000 $0.87
    Buy Now
    BFP620E7764BTSA1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.35114
    Buy Now
    BFP620E7764BTSA1 Digi-Reel 1
    • 1 $0.87
    • 10 $0.87
    • 100 $0.87
    • 1000 $0.87
    • 10000 $0.87
    Buy Now

    bfp620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2009 - Not Available

    Abstract: No abstract text available
    Text: BFP620 Low Noise SiGe:C Bipolar RF Transistor • Highly linear low noise RF transistor 3 â , ) sensitive device, observe handling precaution! Type Marking BFP620 R2s Pin Configuration 1=B 2=E 3=C 1 4=E - Package - SOT343 2013-09-13 BFP620 Maximum Ratings at TA = , (Thermal Resistance Calculation) 2 2013-09-13 BFP620 Electrical Characteristics at TA = 25 °C , 0.1 MHz to 6 GHz 1G 3 2013-09-13 BFP620 Total power dissipation P tot = ƒ(TS


    Original
    PDF BFP620

    2009 - BFP620 applications note

    Abstract: BFP620 BFP620 r2s gummel AN077 BFP620 spice infineon AN077 BGA420 GMA marking RF Power Transistor spice
    Text: BFP620 NPN Silicon Germanium RF Transistor · Highly linear low noise RF transistor 3 · , discharge) sensitive device, observe handling precaution! Type Marking BFP620 R2s Pin Configuration 1=B 2=E 3=C 1 4=E - Package - SOT343 2010-09-21 BFP620 Maximum , calculation of RthJA please refer to Application Note AN077 Thermal Resistance 2 2010-09-21 BFP620 , 2010-09-21 BFP620 Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp) 10 3


    Original
    PDF BFP620 BFP620 applications note BFP620 BFP620 r2s gummel AN077 BFP620 spice infineon AN077 BGA420 GMA marking RF Power Transistor spice

    2001 - BFP620 applications note

    Abstract: 28428 bfp640 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz
    Text: in a 2400 ­ 2483.5 MHz Low Noise Amplifier Application. The BFP640 is a newer sibling of the BFP620 , offering higher gain and higher breakdown voltage than BFP620. Potential target markets at 2.4 GHz include , its older sibling, the BFP620 , as follows: Parameter BVCEO BVCBO BVEBO fT ICmax Gms (1.8 GHz) CCB ( f=1MHz ) S12 @ 2V, 5mA, 1.8 GHz BFP620 2.3 V 8V 1.2 V 57 GHz 80 mA 21 dB BFP640 4.0 V 13 V 1.2 V 36 GHz 50 mA , Transition frequency: measured at 2.3V, 30mA for BFP620 , and 3V, 30mA for BFP640 Maximum collector current


    Original
    PDF BFP640 BFP620, BFP620. OT-343 BFP620 applications note 28428 BFP640 noise figure transistor l2 ansoft 3RD Rail Engineering RF LNA 10 GHz

    2007 - transistor marking R2s

    Abstract: germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK
    Text: BFP620_Chip S B B LBB LBC CBE C RCS E LCB CCS RES CES LEC CBEI CCEI , BFP620 NPN Silicon Germanium RF Transistor · High gain low noise RF transistor 3 · Provides , ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP620 1Pb , available upon special request 2007-04-20 1 BFP620 Maximum Ratings Parameter Symbol , BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit


    Original
    PDF BFP620 OT343 transistor marking R2s germanium transistor ac 128 BFP620 BGA420 T-25 RBS INFINEON TRANSISTOR MARKING NK

    2009 - Not Available

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor • Highly linear low noise RF transistor 3 â , (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking BFP620 R2s Pin Configuration 1=B 2=E 3=C 1 4=E - Package - SOT343 2010-09-21 BFP620 , Resistance 2 2010-09-21 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified , used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2010-09-21 BFP620 Total power


    Original
    PDF BFP620

    2004 - Not Available

    Abstract: No abstract text available
    Text: , no scalling is necessary. Package Equivalent Circuit: CBS RBS CBCC LCC C BFP620_Chip B S , BFP620 NPN Silicon Germanium RF Transistor · High gain low noise RF transistor · Provides , : Electrostatic discharge sensitive device, observe handling precaution! 3 4 2 1 VPS05605 Type BFP620 , Value 300 Unit Junction - soldering point 1) K/W 1 Aug-11-2004 BFP620 Electrical , Unit V µA nA µA - 2 Aug-11-2004 BFP620 Electrical Characteristics at TA = 25°C, unless


    Original
    PDF BFP620 VPS05605 OT343 Aug-11-2004

    2009 - AT 2313

    Abstract: BFP640 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram
    Text: the BFP620 , offering higher gain and higher breakdown voltage than BFP620.Potential target markets at , (LNA) BFP640 differs from its older sibling, the BFP620 , as follows Table 1 Differences between BFP640 and BFP620 Parameter BFP620 BFP640 Comments BVCEO 2.3 V 4.0 V , BFP620 , and 3 V, 30 mA for BFP640 ICmax Gms 80 mA 50 mA Maximum collector current 21 dB 24 dB Maximum Stable Gain |S21/S12| Measured at 2 V, 20 mA for BFP620 , and 3 V, 20 mA for BFP640


    Original
    PDF BFP640 AT 2313 BFP620 applications note dc to 3 ghz lna application circuits BFP620 MTA100 BFP640 noise figure amplifier TRANSISTOR 12 GHZ dc to 3 ghz lna amplifier application circuits lna schematic diagram

    BFP620 applications note

    Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
    Text: regard. The BFP620's worst-case collector-emitter breakdown voltage (BVCEO) is 2.3 volts, but , for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor · Gain = 14.7 dB · , Table 1. Typical Performance for BFP620 V4.3 Application at 1960 MHz, T=25C, V=3.0V Parameter The , connector losses were subtracted, the noise figure result would be 0.2 dB lower. Infineon's BFP620 is a , portable telephones and other battery operated wireless communications devices. The BFP620 offers


    Original
    PDF BFP620 BFP620 lowMay-2000 LQP10A LQG10A 05-Oct-2000 AN060 BFP620 applications note BFP540 AN057 BCR400R BCR400W MS10 MS11 MS12

    2005 - Not Available

    Abstract: No abstract text available
    Text: , no scalling is necessary. Package Equivalent Circuit: CBS RBS CBCC LCC C BFP620_Chip B S , BFP620 NPN Silicon Germanium RF Transistor · High gain low noise RF transistor · Provides , : Electrostatic discharge sensitive device, observe handling precaution! 3 4 2 1 VPS05605 Type BFP620 , Value 300 Unit Junction - soldering point 1) K/W 1 Aug-11-2004 BFP620 Electrical , Unit V µA nA µA - 2 Aug-11-2004 BFP620 Electrical Characteristics at TA = 25°C, unless


    Original
    PDF BFP620 VPS05605 OT343

    2004 - BFP620

    Abstract: T-25
    Text: C BFP620_Chip S B B LBB LBC CBE C RCS E LCB CCS RES CES LEC , BFP620 NPN Silicon Germanium RF Transistor 3 4 · High gain low noise RF transistor · , , observe handling precaution! Type BFP620 Marking R2s 1=B Pin Configuration 2=E 3=C 4 , point 1) RthJS 300 K/W 1 Aug-11-2004 BFP620 Electrical Characteristics at TA = 25 , Thermal Resistance 2 Aug-11-2004 BFP620 Electrical Characteristics at TA = 25°C, unless


    Original
    PDF BFP620 VPS05605 OT343 BFP620 T-25

    2009 - BFP620 applications note

    Abstract: AN057 BFP620 TRANSISTOR 37518 AN060 BCR400R BCR400W BFP540 LQG10A MS11
    Text: voltage breakdown effects. The BFP620's worst case collector-emitter breakdown voltage (VCEO) is 2.3 V , H z A p pl i c a t i o n U s i n g t h e S i l i c o n Germanium BFP620 Transistor R F & P r o t , 3 2 4 1 1 = B, 2 = E, 3 = C, 4 = E 1.1 Description Infineon´s BFP620 is a , portable telephones and other battery operated wireless communications devices. The BFP620 offers exceptionally low noise figure, high gain and high linearity at low power consumption levels. The BFP620 rivals


    Original
    PDF BFP620 TECHN-01-09 AN060 AN060 BFT620 BFP620 applications note AN057 TRANSISTOR 37518 BCR400R BCR400W BFP540 LQG10A MS11

    1999 - RF AMPLIFIER marking A01

    Abstract: marking 53 Sot-343 BFP620
    Text: BFP620 NPN Silicon-Germanium RF Transistor Preliminary Data · · · · · · For high gain low , discharge sensitive device, observe handling precautions! Type BFP620 Marking Ordering Code (8 , . Wireless Products 1 Edition A01, 05/99 BFP620 Electrical Characteristics at TA = 25 °C , Wireless Products 2 Edition A01, 05/99 BFP620 Test Circuit For High IIP3 Vb=0.82V Vc=2V 4.7µF 100nF 82nH 100nF 4.7µF 82nH RF input 47pF BFP620 47pF RFouput SYMBOL S21 NF


    Original
    PDF BFP620 70GHz 10dBm OT-343 RF AMPLIFIER marking A01 marking 53 Sot-343 BFP620

    2005 - BFP620

    Abstract: BGA420 T-25 KF 25 transistor AF 2596
    Text: BFP620_Chip S B B LBB LBC CBE C RCS E LCB CCS RES CES LEC CBEI CCEI , BFP620 NPN Silicon Germanium RF Transistor · High gain low noise RF transistor 3 · Provides , precaution! Type BFP620 Marking R2s 1=B Pin Configuration 2=E 3=C 4=E - Package - , 1 BFP620 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point , calculation of R thJA please refer to Application Note Thermal Resistance 2005-10-17 2 BFP620


    Original
    PDF BFP620 OT343 BFP620 BGA420 T-25 KF 25 transistor AF 2596

    2002 - Not Available

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides , device, observe handling precaution! Type BFP620 Marking ACs 1=B Pin Configuration 2=E 3 , -19-2002 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter , , IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V 2 Dec-19-2002 BFP620 Electrical , Dec-19-2002 BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip


    Original
    PDF BFP620 VPS05605 OT343 Dec-19-2002

    2002 - Not Available

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides , device, observe handling precaution! Type BFP620 Marking ACs 1=B Pin Configuration 2=E 3 , -19-2002 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Parameter , , IC = 0 DC current gain - IC = 50 mA, VCE = 1.5 V 2 Dec-19-2002 BFP620 Electrical , Dec-19-2002 BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip


    Original
    PDF BFP620 VPS05605 OT343 Collector-emit50 Dec-19-2002

    2002 - deviation sheet

    Abstract: No abstract text available
    Text: transistor Provides outstanding performance BFP620 3 4 for a wide range of wireless applications , E6327 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP620 , R please refer to Application Note Thermal Resistance thJA 1 Aug-01-2002 BFP620 , . Unit 2 Aug-01-2002 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise , -01-2002 BFP620 Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 200 mW 10 3


    Original
    PDF E6327 E7764 BFP620 VPS05605 E7764 E6327 Aug-01-2002 deviation sheet

    2004 - transitor RF 98

    Abstract: BFP620 applications note germanium transistor ac 128 BFP620
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 · High gain low noise RF transistor · , , observe handling precaution! Type BFP620 Marking R2s 1=B Pin Configuration 2=E 3=C 4 , point 1) RthJS 300 K/W 1 Apr-21-2004 BFP620 Electrical Characteristics at TA = 25 , Thermal Resistance 2 Apr-21-2004 BFP620 Electrical Characteristics at TA = 25°C, unless , this measurement is 50 from 0.1 MHz to 6 GHz 3 Apr-21-2004 BFP620 SPICE Parameter


    Original
    PDF BFP620 VPS05605 OT343 Apr-21-2004 transitor RF 98 BFP620 applications note germanium transistor ac 128 BFP620

    2002 - deviation sheet

    Abstract: BFP620 acs BFP620 applications note
    Text: noise RF transistor Provides outstanding performance BFP620 3 4 for a wide range of wireless , precaution! Type BFP620 Maximum Ratings Parameter Marking ACs 1=B Pin Configuration 2=E 3=C 4 , Application Note Thermal Resistance thJA 1 Aug-01-2002 BFP620 Electrical Characteristics at TA = , -01-2002 BFP620 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min , -01-2002 BFP620 Total power dissipation Ptot = (TS ) Permissible Pulse Load RthJS = (tp ) 200 mW 10 3


    Original
    PDF E6327 E7764 L7764 BFP620 VPS05605 E7764 L7764 E6327 Aug-01-2002 deviation sheet BFP620 acs BFP620 applications note

    2003 - BFP620

    Abstract: BFP620 acs BFP620 applications note GFT45
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides , , observe handling precaution! Type BFP620 Marking ACs 1=B Pin Configuration 2=E 3=C 4 , Thermal Resistance Value Unit 300 K/W Parameter thJA 1 Apr-07-2003 BFP620 , gain - IC = 50 mA, VCE = 1.5 V 2 Apr-07-2003 BFP620 Electrical Characteristics at TA = , Apr-07-2003 BFP620 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor


    Original
    PDF BFP620 VPS05605 OT343 Apr-07-2003 BFP620 BFP620 acs BFP620 applications note GFT45

    2001 - BFP620 acs

    Abstract: BFP620 s parameters 4ghz
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 · High gain low noise RF transistor 4 · , precaution! Type BFP620 Marking ACs 1=B Pin Configuration 2=E 3=C 4=E Package SOT343 , please refer to Application Note Thermal Resistance 1 Aug-29-2001 BFP620 Electrical , is 50 from 0.1MHz to 6GHz. 2 Aug-29-2001 BFP620 SPICE Parameters (Gummel-Poon Model , : http://www.infineon.com/silicondiscretes 3 Aug-29-2001 BFP620 For non-linear simulation


    Original
    PDF BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz

    BFP619

    Abstract: IC 621 tranzystor BFP620 BFP621 BFP 619 Kl PS
    Text: TRANZYSTORY n-p-n BFP619, BFP620 i BFP621 SWW 1156-213 Tranzystory krzemowe epiplanarne malej mocy wielkiej' czQstotliwoSci. przeznaczone do stosowania w ukladach automatyki, ukladach , parametrow eksploatacyjnych Typ Napi^cie BFP619 BFP620 BFP621 kolektor-baza Ucbo 70 50 30 V Napi^cie , TRANZYSTOR BFP621 Parametry statyczne TRANZYSTOR BFP620 Parametry statyczne przy tamb = 298 K (25°C) Prqd , €” pa-rametr H] BFP620 1 10 ta 71 ¿ ~ •25 .60


    OCR Scan
    PDF BFP619, BFP620 BFP621 BFP619 IC 621 tranzystor BFP621 BFP 619 Kl PS

    2004 - Not Available

    Abstract: No abstract text available
    Text: 16 dB IIP3 7 6.5 15 dBm Wideband Gain Block Wideband Gain Block BFP620 BFP540F LNA BFP620 BFP540F I 90° BGA619 Pin/ Switch Q Application Example UMTS , Dual Schottky Power Detection BAT62xx BAT68xx VGA Wideband Gain Block I 90° BFP620


    Original
    PDF BGA619 CDMA2000 99GHz. BGA619. B132-H8413-X-X7600

    Not Available

    Abstract: No abstract text available
    Text: BFP620 Infineon technologies NPN Silicon-Germanium RF Transistor Preliminary Data • • For high gain low noise amplifier Noise Figure F = 0.65 dB at 1.8 GHz • G ms=21 dB at 1.8 GHz , precautions! Type Marking O rdering Code (8-m m taped) Pin C onfiguration 1 2 3 4 B BFP620 , Ratings. W ireless Products 1 Edition A 0 1 , 05/99 BFP620 Infineon technologies , ; Z^0D | W ireless Products 2 Edition A 0 1 , 05/99 BFP620 Infineon technologies


    OCR Scan
    PDF BFP620 10dBm T-343

    2009 - BFP620F

    Abstract: BFP640 schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon
    Text: characteristics as compared to the BFP620 , while maintaining the BFP620's phenomenally low noise figure levels , ' B7HF process. The BFP640 is a derivative of Infineon's original SiGe transistor, the BFP620. While , older BFP620. In addition to being useful in LNA applications, the BFP640 has been successfully , VCE0 ICmax PDISS Volts mA mW BFP620 2.3 80 BFP620F 2.3 Device , predecessor, the BFP620. There are other SiGe transistors in Infineon's high-frequency transistor family


    Original
    PDF BFP640 BFP620F schematic diagram CORDLESS DRILL BFP620 applications note TRANSISTOR40GHZ AN082 amplifier TRANSISTOR 12 GHZ BFP650 BFP690 5703 infineon

    transistor 2SC5066

    Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
    Text: BFP405 BFP420 BFP450 BFP520 BFP620 BFP640 2SC5645 2SC5541 MT3S41T 2SC5629 2SC5700 2SC5781


    Original
    PDF THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
    Supplyframe Tracking Pixel