COLOSSUS Search Results

XPOSYS

Abstract: Germanium Transistor X-GOLD
Contextual Info: BGB707L7ESD SiGe:C Wideband MMIC LNA with Integrated ESD Protection Data Sheet Revision 3.2, 2010-06-30 RF & Protection Devices Edition 2010-06-30 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

ITS4200S-SJ-D

Abstract: MJ 5023 JEDEC51-7 I200SD AURIX EPCOS 5025 -3
Contextual Info: ITS4200S-SJ-D Smart High-Side NMOS-Power Switch Data Sheet Rev 1.0, 2012-09-01 Standard Power Smart High-Side NMOS-Power Switch 1 ITS4200S-SJ-D Overview Features • • • • • • • • • • • • • • • • CMOS compatible input Switching all types of resistive, inductive and capacitive loads

advantage of fm transmitter two stage

Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
Contextual Info: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by

sle 66r01p

Abstract: SLE66R01P 66R01L 66R01P nfc antenna design NXP 14443-3 type A command read write 66R01PN SLE66 murata nfc antenna NFC Tags
Contextual Info: my- d mov e my- d™ mov e N FC S LE 66 R01 P S LE 66 R01 P N Intelligent 1216 bit EEPROM with Contactless Interface compliant to ISO/IEC 14443-3 Type A and support of NFC Forum™ Type 2 Tag Operation Sh o rt P ro d u c t I n fo r m a ti o n 2011-11-24

XPOSYS

Abstract: gummel poon model parameter HBT X-GOLD colossus diodes transistor marking k2 dual Trimble Germanium Transistor agilent ads SENSONOR 2.4ghz lnb
Contextual Info: BFP640ESD Robust High Performance Low Noise Bipolar RF Transistor Data Sheet Revision 1.0, 2010-06-29 RF & Protection Devices Edition 2010-06-29 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.

BGM1043

Abstract: GLOBAL NAVIGATION 3000 BGM1043N7 LNA bluetooth lte tranceiver 1800MHz
Contextual Info: B G M10 43 N7 Low -N ois e Fr ont -E nd Mo dule for G loba l Na vig atio n S atelli te S ys te m s G N SS Applic atio n Usi ng H igh - Q Ind uc tors Applic atio n N ote A N 283 Revision: Rev. 1.0 2012-04-10 RF and P r otecti on D evic es Edition 2012-04-10

tvs3v3l4u

Abstract: TVS3V3
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes TVS3V3L4U Low Capacitance ESD / Transient / Surge Protection Array TVS3V3L4U Data Sheet Revision 2.2, 2012-05-09 Final Power Management & Multimarket Edition 2012-05-09 Published by Infineon Technologies AG 81726 Munich, Germany

BGM1033

Abstract: BGM1033N7 gps schematic diagram
Contextual Info: BGM1033N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.2, 2011-07-18 RF & Protection Devices Edition 2011-07-18 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

BGM1043N7

Abstract: BGM1043 GLOBAL NAVIGATION 3000 bluetooth based positioning system block diagram M120319 omnivision EVALUATION BOARD gps m 89 pin configuration lte tranceiver 1800MHz
Contextual Info: B G M10 43 N7 Low -N ois e Fr ont -E nd Mo dule for G loba l Na vig atio n S atelli te S ys te m s G N SS Applic atio n Usi ng 0 201 Co m p onents Applic atio n N ote A N 286 Revision: Rev. 1.0 2012-06-27 RF and P r otecti on D evic es Edition 2012-06-27

GPS chip 3330r

Abstract: 3330r 3330R 38743 XE16BB10 cr816 GPS+chip+3330r digital correlator A/GPS chip 3330r
Contextual Info: XE16BB10 Enhanced GPS Correlator XE16BB10 Enhanced GPS Channel Correlator FEATURES GENERAL DESCRIPTION • • The XE16BB10 is part of the XE1610 chipset based on the advanced FirstGPS architecture. This enhanced GPS channel correlator is designed to receive and

Contextual Info: Hipac High performance passive and actives on chip BGF106C SIM Card Interface Filter and ESD Protection BGF106C Datasheet Rev. 3.1, 2013-01-16 Final Power Management & Multimarket BGF106C Revision History Rev. 3.0, 2011-05-13 Page or Item Subjects major changes since previous revision

2qs03g

Abstract: ICE2QS03
Contextual Info: Edition 2014-03-06 Published by Infineon Technologies AG, 81726 Munich, Germany. 2014 Infineon Technologies AG All Rights Reserved. LEGAL DISCLAIMER THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE

Contextual Info: TLE4964-3M High Precision Automotive Hall Effect Switch Data Sheet Revision 1.0, 2012-12-18 Sense & Control Edition 2012-12-18 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

INFINEON package PART MARKING

Contextual Info: BGM1044N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.0, 2012-03-27 RF & Protection Devices Edition 2012-03-27 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion 3 phase 200 V and 600 V gate drive IC 6EDL04I06PT 6EDL04I06NT 6EDL04N06PT 6EDL04N02PR EiceDRIVER™ datash eet <Revision 2.3>, 20.06.2013 Indust rial Po wer & Con trol Edition 20.06.2013

ISO1H811

Contextual Info: ISOFACE ISO1H811G Galvanic Isolated 8 Channel High-Side Switch Datasheet Revision 2.3, 2013-01-31 Power Management & Multimarket Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

ESD204

Abstract: 02ELS
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD204-B1-02ELS Bi-directional Low Capacitance TVS Diode ESD204-B1-02ELS Data Sheet Revision 1.1, 2013-02-06 Final Power Management & Multimarket Edition 2013-02-06 Published by Infineon Technologies AG 81726 Munich, Germany

1ED020I12FA2

Abstract: 1ED020I12-F Solid State Micro Technology 2055 logic connections diagramms
Contextual Info: EiceDRIVER 1ED020I12FA2 Single IGBT Driver IC Preliminary Data Sheet Rev. 1.2, 2012-12-05 Asic & Power ICs Edition 2012-12-05 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

Contextual Info: Infineon LITIX Power Multitopology LITIXTM Power DC/DC Controller IC TLD5095EL Infineon® LITIX™ Power Multitopology LITIXTM Power DC/DC Controller IC Data Sheet Revision 1.4 2015-03-11 Automotive Power Infineon® LITIX™ Power TLD5095EL Table of Contents

2EDL23N06

Abstract: trimble R8
Contextual Info: Eice DR IV ER High voltage gate driver IC BDTIC E valu atio n B oar d Application Note EV AL -2 E DL2 3N 06 PJ EV AL -2 E DL2 3N 06 PJ Applic atio n N ote Rev. 1.0 2014-04-11 Infin eon T echnol ogi es A G www.BDTIC.com/infineon BDTIC Edition 2014-04-11

Contextual Info: Electronic Component Distributor. Source:Infineon Technologies P.N:BGA524N6E6327XTSA1 Desc:IC AMP SI-MMIC Web:http://www.hotenda.cn E-mail:sales@hotenda.cn Phone: +86 075583794354 BGA524N6 Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems (GNSS)

Contextual Info: Eice DR IV ER High voltage gate driver IC 6E D f a mil y - 2 nd g e nera tion Chip pr od uct 3 phase 600 V gate drive IC 6ED003L06-C2 6EDL04I06PC 6EDL04I06NC 6EDL04N06PC EiceDRIVER™ datash eet <Revision 2.2>, 19.02.2013 Indust rial Po wer an d C ont rol

Contextual Info: LED Drivers for High Power LEDs ILD4120 1200 mA Step Down LED Driver Data Sheet Revision 5.0, 2011-08-23 Preliminary Industrial and Multimarket Edition 2011-08-23 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG

Contextual Info: BGB717L7ESD SiGe:C Low Noise Amplifier MMIC for FM Radio Applications Data Sheet Revision 3.3, 2010-06-24 RF & Protection Devices Edition 2010-06-24 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved.