UPA806T Search Results

transistor K 2937

Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
Contextual Info: SILICON TRANSISTOR UPA806T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz

transistor NEC D 587

Abstract: 63950
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA806T MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD PACKAGE DRAWINGS FEATU RES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance

TRANSISTOR C 6090 npn

Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz

transistor bf 458

Abstract: NE685 S21E UPA806T UPA806T-T1
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1

NF NPN Silicon Power transistor TO-3

Abstract: transistor bf 458
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package PACKAGE O UTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz 2.1 ± 0.1

TRANSISTOR 3358

Abstract: transistor 9527 LB 4890 NE685 S21E UPA806T UPA806T-T1 UPA806T-T1-A of IC 9290 transistor k 4110
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE685 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 12 GHz

Contextual Info: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 VAF 15 VJS IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF

cascode transistor array VCO

Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

UPA827TF

Abstract: UPA833TF NE685 UPA814T
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01

UPA802T

Abstract: BD304 NE02132
Contextual Info: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -

transistor bf 458

Abstract: Transistor B C 458 Q555 transistor 3247 NF NPN Silicon Power transistor TO-3
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UpA8 6T OUTLINE DIMENSIONS (Units in mm) SMALL PACKAGE STYLE: P A C K A G E OUTLINE S06 (Top View) 2 NE685 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH GAIN: IS21EI2 = 8.5 dB TYP at 2 GHz

SMD M05 sot23

Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
Contextual Info: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly

ne3511s02 s2p

Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Contextual Info: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

nec b1007

Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Contextual Info: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

P806T

Abstract: 0371
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATURES PACKAGE DRAW INGS • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • (U n it: m m )

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

SMD transistor M05

Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Contextual Info: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE

BB 509 varicap diode

Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Contextual Info: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s