NE698M01 Search Results

UPA827TF

Abstract: UPA833TF NE685 UPA814T
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01

FR110

Abstract: 3059 npn transistor 3268 SOT-363 RF 2.0GHZ transistor 554-1
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 H IG H fT : 17 GHz TYP • NE698M01 TOP VIEW H IG H G A IN : 2.1 ± 0.1 IS21 e|2 = 15.5 dB TYP at f = 2 GHz, Vce = 2 V, Ic = 1 mA

uA 741 IC

Abstract: TRANSISTOR 6019 IC ua 741 S21E NE698M01 NE698M01-T1 OF IC 741 ic ca 741 SOT-363 662
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 17 GHz TYP • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz, VCE = 2 V, IC = 1 mA

Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • NE698M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 H IG H fr: 17 G Hz TYP a t 2 V , 7 mA TO P VIEW • LOW NOISE FIGURE: - 2.1 ± 0 .1

NE686

Abstract: NE698M01 NE698M01-T1 S21E 8 pin ic 5916 ic 4072 transistor s11 s12 s21 s22 TRANSISTOR K 2191 8427 transistor
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE698M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 17 GHz TYP at 2 V, 7 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA • HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz

2SK2396A

Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

uPA63

Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening

UPA827TF

Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T