ha 7741
Abstract: UPA833TF 13924 IC 7487
Contextual Info: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,
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ne688ne685upa833tfne68830+6ne68530upa833tf-t1upa836tfha 774113924ic 7487
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Um 3562
Abstract: IC 7487 UPA833TF 263 7660 ic 7421 transistor M 9741 NT 2955 ON transistor FA 5323 IC 7431 ha 7741
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • UPA833TF OUTLINE DIMENSIONS Units in mm Package O utline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 —
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upa833tfne6881ne685upa833tf-t1+9um 3562ic 7487263 7660ic 7421transistor m 9741nt 2955 on transistorfa 5323ic 7431ha 7741
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UPA833TF
Abstract: Um 3562
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA833TF OUTLINE DIMENSIONS Units in mm FEATURES Package O utline TS06 (Top View) LOW NOISE: Q1 :NF = 1.7 dB T Y P at f = 2 G Hz, V c e = 1 V, Ic = 3 mA Q 2:N F = 1.5 dB T Y P at f = 2 G Hz, V c e = 3 V, Ic = 3 mA
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upa833tfne688ne685ne68830+4ne68530upa833tf-t124-hourum 3562
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UPA833TF
Abstract: NE68830
Contextual Info: NONLINEAR MODEL UPA833TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 3.8e-16 7e-16 MJC 0.48 0.34 BF 135.7 109 XCJC 0.56 NF 1 1 CJS 0.75 VAF 28 15 VJS 0.75 IKF 0.6 0.19 MJS ISE 3.8e-15 7.9e-13 FC 0.75 0.5 3e-12 NE 1.49 2.19 TF 11e-12
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upa833tf8e-168e-155e-16+7796e-12549e-127e-169e-134e-1218e-12ne68830
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UPA833TF
Abstract: q2.048
Contextual Info: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12
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upa836tf7e-169e-134e-12+818e-128e-168e-155e-16796e-12549e-12upa833tfq2.048
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5252 F 1005
Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA
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upa836tfne685ne688upa833tf+6upa836tf-t124-hour5252 f 10055252 f 1114s21e5942
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UPA827TF
Abstract: UPA833TF NE685 UPA814T
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01
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ne696m01ne698m01ne699m01upa806t+8upa807tupa808tupa809tupa814tne685ne686upa827tfupa833tf
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MJE 13031
Abstract: 054S1 cd 4637
Contextual Info: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA
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upa836tfne685ne688upa836tf-t1+4upa833tfmje 13031054s1cd 4637
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UPA833TF
Abstract: transistor MJE 2955 uP 6308 AD
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^
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upa833tfne688ne685ne68830+5ne68530upa833tf-t1upa836tftransistor mje 2955up 6308 ad
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MJE 13031
Abstract: LA 7693
Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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pt 6964
Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA
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upa833tfne688ne685upa833tf-t1+7ne68830ne68530upa836tf24-hourpt 6964mje 13031s21e
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transistor M 9741
Abstract: cd 4017 IC NEC JAPAN IC IC D 7520 transistor 9718 ic cd 4017 IC 4017 B transistor M 9718 NPN C 5344 nec 4312 E 70 5059
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION 2.10± 0.1 • The ¿¡PA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF
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upa833tf2sc51932sc4959transistor m 9741+9cd 4017 icnec japan ic ic d 7520transistor 9718ic cd 4017ic 4017 btransistor m 9718npn c 5344nec 4312e 70 5059
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UPA827TF
Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T
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upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363
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