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    UPA836TF Search Results

    UPA836TF Datasheets (4)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    UPA836TF
    NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF 73.79KB 12
    uPA836TF
    NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF 73.79KB 12
    UPA836TF-T1
    NEC NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE Original PDF 73.79KB 12
    uPA836TF-T1
    NEC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PA Original PDF 73.79KB 12

    UPA836TF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UPA833TF

    Abstract: q2.048
    Contextual Info: NONLINEAR MODEL UPA836TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 3.8e-16 MJC 0.34 0.48 BF 109 135.7 XCJC 0.56 NF 1 1 CJS 0.75 VAF 15 28 VJS 0.75 IKF 0.19 0.6 MJS ISE 7.9e-13 3.8e-15 FC 0.5 0.75 11e-12 NE 2.19 1.49 TF 2e-12


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    upa836tf7e-169e-134e-12+818e-128e-168e-155e-16796e-12549e-12upa833tfq2.048 PDF

    MJE 13031

    Abstract: 054S1 cd 4637
    Contextual Info: PRELIMINARY DATA SHEET UPA836TF NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package O utline TS06 (Top View) Q1 :NF = 1.5 dB TYP at f = 2 GHz, V ce = 3 V, Ic = 3 mA Q2:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA


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    upa836tfne685ne688upa836tf-t1+4upa833tfmje 13031054s1cd 4637 PDF

    5252 F 1005

    Abstract: 6681 - 250 transistor npn d 5058 cd 4027
    Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package O utline TS06 Q1 :NF = 1.5 dB T Y P at f = 2 G Hz, V ce = 3 V, Ic = 3 mA Q 2:N F = 1.7 dB T Y P at f = 2 G Hz, V ce = 1 V, Ic = 3 mA


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    upa836tfne685ne688upa836tf-t1+524-hour5252 f 10056681 - 250transistor npn d 5058cd 4027 PDF

    MJE 13031

    Abstract: LA 7693
    Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA


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    upa836tfne685ne688pa836tf+7hie-14ne68530ne68830upa836tf-t1upa833tfmje 13031la 7693 PDF

    5252 F 1005

    Abstract: 5252 F 1114 UPA836TF NE685 NE688 S21E UPA833TF UPA836TF-T1 5942
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 2.1 ± 0.1 Q2:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA


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    upa836tfne685ne688upa833tf+6upa836tf-t124-hour5252 f 10055252 f 1114s21e5942 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


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    2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


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    ne696m01ne698m01ne699m01upa806t+8upa807tupa808tupa809tupa814tne685ne686upa827tfupa833tf PDF

    ha 7741

    Abstract: UPA833TF 13924 IC 7487
    Contextual Info: NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA833TF OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, V ce = 1 V, Ic = 3 mA Q2:NF = 1.5 dB TYP at f = 2 GHz, Vce = 3 V, Ic = 3 mA HIGH GAIN: Q1: IS21 EI2 = 3.5 dB TYP at f = 2 GHz, Vce = 1 V,


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    ne688ne685upa833tfne68830+6ne68530upa833tf-t1upa836tfha 774113924ic 7487 PDF

    UPA833TF

    Abstract: transistor MJE 2955 uP 6308 AD
    Contextual Info: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm Package Outline TS06 LOW NOISE: +— Q1 :NF = 1.7 dB TYP at f = 2 GHz, V c e = 1 V, Ic = 3 mA 2.1 ± 0.1 — ► 1.25±0.1-^


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    upa833tfne688ne685ne68830+5ne68530upa833tf-t1upa836tftransistor mje 2955up 6308 ad PDF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


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    pt 6964

    Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
    Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA


    Original
    upa833tfne688ne685upa833tf-t1+7ne68830ne68530upa836tf24-hourpt 6964mje 13031s21e PDF

    UPA833TF

    Abstract: NE68830
    Contextual Info: NONLINEAR MODEL UPA833TF BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 3.8e-16 7e-16 MJC 0.48 0.34 BF 135.7 109 XCJC 0.56 NF 1 1 CJS 0.75 VAF 28 15 VJS 0.75 IKF 0.6 0.19 MJS ISE 3.8e-15 7.9e-13 FC 0.75 0.5 3e-12 NE 1.49 2.19 TF 11e-12


    Original
    upa833tf8e-168e-155e-16+7796e-12549e-127e-169e-134e-1218e-12ne68830 PDF

    nec 14312 transistor

    Abstract: tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec
    Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The uPA836TF has tw o different built-irvtransistors (Q1 and Q 2) for low noise amplification in the VHF band to UHF


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    upa836tf2sc51932sc4959nec 14312 transistor+8tag 9040tag 8538tm 5503tag 8504nec 6681tag 8743tag 144728504 nec PDF

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


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    upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363 PDF