LA 5530
Abstract: c 4977 transistor em 223 IC AT 6884 TRANSISTOR NPN 16085
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD P A C K A G E D R A W IN G S (Unit: m m ) FEA TU R E S • Low noise and high gain
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upa826tf2sc4959pa826tfpa826tf59+6jpa826tfla 5530c 4977 transistorem 223ic at 6884transistor npn 16085
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nec 2410
Abstract: transistor NEC D 587 2410 nec
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIM ENSIONS in m illim eters 2.1
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2sc49594959-t4959-t2nec 2410+2transistor nec d 5872410 nec
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nec 2410
Abstract: transistor marking T83 ghz 2SC4959 63950 2SC4959-T1
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS Low Noise, High Gain in millimeters Low Voltage Operation 2.1 ± 0.1 Low Feedback Capacitance 1.25 ± 0.1
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2sc4959nec 2410transistor marking t83 ghz63950+12sc4959-t1
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nec 2410
Abstract: pulse 01940
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4959 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD FEATURES • Low Noise, High Gain • Low Voltage Operation • Low Feedback Capacitance C re PACKAGE DIMENSIONS in m illim eters •
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2sc49592sc4959-t14959-t2nec 2410+1pulse 01940
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D1880
Abstract: transistor D1880 d2646 D4205 D4144 d1839 D1880 Transistor D5149 D1294 D2243
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAGE DRAWINGS (Unit: mm) FEATURES • Low noise and high gain 2.10±0.1
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ppa826tf2sc4959d1880transistor d1880+8d2646d4205d4144d1839d1880 transistord5149d1294d2243
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7082 B ic audio amplifier
Abstract: SN 16880 14 pin ic 4027 TRANSISTOR NPN 16085 TRANSISTOR SN 532-3 NEC 4570 IC 7487 transistor lc 7822 n transistor 9527 IC AT 6884
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4959 THIN -TYPE SMALL MINI MOLD PACKAG E DRAWINGS (U nit: mm) FEATURES • Low noise and high gain •
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upa826tf2sc4959/xpa826tf/xpa826tf-t+107082 b ic audio amplifiersn 1688014 pin ic 4027transistor npn 16085transistor sn 532-3nec 4570ic 7487transistor lc 7822 ntransistor 9527ic at 6884
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3692 nec
Abstract: 2SC4226 2SC4959
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor µPA835TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA835TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF
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pa835tf2sc49593692 nec2sc4226 |
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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XM0830SJ
Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517bf770abf771+16bf775bf799bf799wbfp181bfp181rbfp182xm0830sjsmd code marking 162 sot23-5marking v14 sot23-5rf transistor selectionsmd code marking rf ft sot23smd code marking nec rf transistorsot-363 infsmd marking d3 sot363xm0860shmga51563
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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bas32bas45bav105ll4148+15ll4448bb241bb249ll914ll4150mmbd2104transistor nec 05fhp2835 diodezener diode t2dwhat is the equivalent of ztx 458 transistormmbd2103t2d diode 3wt2d 8n2n2222 as equivalent for bfr96mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249mmbd2103zener diode t2dmmbd2101mmbd2102mmbd2104smd codesbc107 transistor smd code package sot23transistor nec 05fbat15-115snds358n
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249smd codestransistor smd t1pmmbd2104baw92smd transistor a6aschottky diode s6 81aa4s smd transistortransistor smd a7stransistor smd p2fmmbd2101
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BGT24MTR11
Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters
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24ghzbf517bf770abf771+16bf799bf799wbfp181bfp182bfp182rbfp182wbgt24mtr11az1045-04fbar86-02lrh24ghz radarbga628l7smv1705bfr181walpha&omega date codemarking code onsemi diode2sc4586
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014e1
Abstract: cce 7100 transistor d 13009 br 8764 CD 5888 cb ic CD 5888 CB bf 0252 ha 14052 transistor j 13009 NE68530
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES_ • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES ♦ • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fr of 1 2 GHz • NOISE FIGURES OF 1.5 dB AT ZQ GHZ
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ne685ne68518-t1ne68519-t1e68530-t1+14ne68533-t1ne68539-t1ne68539r-t124-hour014e1cce 7100transistor d 13009br 8764cd 5888 cb iccd 5888 cbbf 0252ha 14052transistor j 13009ne68530
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cce 7100
Abstract: 85500 transistor br 8764 NE685 NE68530 cce 7100 1053 BJT BF 167 BJT IC Vce 2SC4959 2SC5010
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
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ne685ne68518-t1ne68519-t1ne68530-t1+13ne68533-t1ne68539-t1ne68539r-t124-hourcce 710085500 transistorbr 8764ne68530cce 7100 1053bjt bf 167bjt ic vce2sc49592sc5010
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transistor 9527
Abstract: p12724 ic 5219 8mm 2SC4226 2SC4959 IC 4822 ic 8720
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor µPA832TF NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) The µPA832TF has two different built-in transistors (Q1 2.10±0.1 and Q2) for low noise amplification in the VHF band to UHF
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pa832tf2sc4226transistor 9527p12724+4ic 5219 8mm2sc4959ic 4822ic 8720
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pulse 01940
Abstract: 2SC4959 lem 714
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Noise, High Gain (Unit: mm) • Operable at Low Voltage 2.1±0.1 • Small Feed-back Capacitance
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pa806tpa806t-t1pulse 019402sc4959+1lem 714
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2SC5743
Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC4091 2SC5937 2sc5747 2sc2570
Contextual Info: 高周波半導体デバイス Microwave Semiconductor Devices W-CDMA用IC（ICs for W-CDMA） ・W-CDMA用にシリコン／GaAs MMICを開発中 ・小型ミニモールドやリードレスQFNなど実装面積の削減に有効なパッケージに搭載
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pc8190/8191krx-ifpc8194/8195krx-ifpg2124th10tssop+1210-pinfax044435-96082sc57432sc56002sc55332sc56932sc56782sc57442sc40912sc59372sc57472sc2570
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85500 transistor
Abstract: transistor d 13009 NPN Transistor 13009 transistor MJE 13009 k 13009 c 5929 transistor transistor E 13009 BR 13009 NE685 CCE 7100
Contextual Info: SILICON TRANSISTOR NE685 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER
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ne6858539rne68518-t1-ane68519-t1-a+13ne68530-t1-ane68533-t1-ane68539-t1-ane68539r-t185500 transistortransistor d 13009npn transistor 13009transistor mje 13009k 13009c 5929 transistortransistor e 13009br 13009cce 7100
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P806T
Abstract: 0371
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA806T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD FEATURES PACKAGE DRAW INGS • Low N oise, H igh Gain • O p e ra b le at Low V o lta g e • (U n it: m m )
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pa806t2sc4959upa806tupa806t-t1+2p806t0371
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uc 8343
Abstract: transistor d 13009 NT 2955 ON transistor 2SC4226 2SC4959 IC 4069 pin ic 4069 pin configuration transistor 13009
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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uc 8343transistor d 13009nt 2955 on transistor2sc4226+42sc4959ic 4069 pinic 4069 pin configurationtransistor 13009
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cce 7100
Abstract: 85500 transistor 2SC4955 NE68519-T1 2SC4959 2SC5010 2SC5015 NE685 NE68518 NE68519
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ 18 SOT 343 STYLE
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ne685ne68518-t1ne68519-t1ne68530-t1+12ne68533-t1ne68539-t1ne68539r-t124-hourcce 710085500 transistor2sc49552sc49592sc50102sc5015ne68518ne68519
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uPD72002-11
Abstract: uPD16305 uPC1237 upc1701 uPD65656 2SD1392 2sb1099 UPD65625 uPD78F0841 uPG508
Contextual Info: 品名別検索 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］ダイアログ・ボックスが表示されます。 3. 検索したい品名または品名の一部を入力して， 検索 F を クリックしてください。
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pd43256ax13769xj2v0cd00pd750004pd750006+15pd750008pd75p0016pd750104pd750106pd750108upd72002-11upd16305upc1237upc1701upd656562sd13922sb1099upd65625upd78f0841upg508
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85500 transistor
Abstract: st 85500 LM 7209 transistor d 13009 P 13009 0803 P 13009 0708 0384 80700 L 8629 lm 7803
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE685 SERIES FEATURES • LOW C O ST • S M A LL AND U L T R A S M A LL S IZ E P A C K A G E S • LOW V O LTA G E/LO W C U R R E N T O PER A TIO N • HIGH GAIN BANDW IDTH P R O D U C T : fTof 12 GHz . N O ISE F IG U R E S O F 1.5 d B A T 2.0 GHZ
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ne685ot-143ne68518-t1ne68519-t1+14ne68530-t1ne68533-t1ne68539-t1ne68539r-t185500 transistorst 85500lm 7209transistor d 13009p 13009 0803p 13009 0708038480700l 8629lm 7803
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