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    transistor smd t1p Datasheets

    Top Results (6)

    Part ECAD Model Manufacturer Description Download Buy
    BD9G102G-LB ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade) Visit ROHM Semiconductor
    BD9G341AEFJ ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET Visit ROHM Semiconductor
    BD9G101G ROHM Semiconductor Step-down Switching Regulators with Built-in Power MOSFET Visit ROHM Semiconductor
    BD9E104FJ ROHM Semiconductor 7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9A600MUV ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9G341AEFJ-LB ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade) Visit ROHM Semiconductor

    transistor smd t1p Datasheets Context Search

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    TRANSISTOR t1p

    Abstract: T1P29C pa1b dissipator TO127 PA1-1U to220 transistor t1p29 transistor A953
    Text: y-^bj 110 100 90 80 70 60 50 40 30 20 10 PA1-1U W/ T1P -29C (TO-220) TRANSISTOR r i , .375 110 100 90 80 70 60 50 40 30 20 10 0 PC1-1CB w/TIP-29C (TO-220) TRANSISTOR /A


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    PDF w/TIP-29C O-220) O-126, O-127, O-220 TRANSISTOR t1p T1P29C pa1b dissipator TO127 PA1-1U to220 transistor t1p29 transistor A953

    S6R-5-C200-N

    Abstract: transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p
    Text: UNIVERSAL MIDI SENSORS 50 x 50 mm COMPACT SENSORS · · · · New background and foreground suppression models Free voltage versions with relay output 10-30 Vdc version with transistor output Standard cable or M12 connection S6 SERIES The S6 series, thanks to the excellent detection performances and the variety of power supply and connection possibilities, offers the most complete universal , S6T-5-B5-P polarised retroreflex S6-5-T1 retroreflex for transparents S6R-5- T1-P retroreflex for


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    PDF 50x50 S6R-5-M50-P S6R-5-M50-N S6R-5-N20-P S6R-5-N20-N S6-5-F20 S6R-5-F20-P S6R-5-F20-N S6T-5-F20-P S6-5-G20 S6R-5-C200-N transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p

    pin out of 80386 microprocessor

    Abstract: 80386 microprocessor 80386 microprocessor functional block diagram pipeline architecture for 80386 80386 microprocessor pin out diagram 80386 microprocessor architecture microprocessor 80386 pin out diagram intel 80386 pin configuration of intel 80386 i80386
    Text: ,000 transistor VLSI device fabricated in 1.5 micron CMOS technology. The Microcache is available in , MICROSYSTEMS A38152 Microcache A38152 STATE Tx 80386 STATE CYCLE 1 T1P T2P CYCLE 2 T1P T2P Ty T1P T2P T1P T2P clk2 sys-wr# sys-ack# Figure 4-4. Consecutive Bus Cycles 4.4.2 Exiting Pipelined Mode , STATE CYCLE 1 t1p T2P CYCLE 2 Ti T1P 80386 STATE clk2 T1P T2I addr, be# data m/io#, d/c , T1P TJT-fT-TL 1SL read addr.2 data in. 1 read cycle 1 I & read cy r\ :le 2 \J f\ T2P


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    PDF A38152 32-kilobyte 32-bit 84-pin I80386 ADDR11 ADDR12 ADDR13 pin out of 80386 microprocessor 80386 microprocessor 80386 microprocessor functional block diagram pipeline architecture for 80386 80386 microprocessor pin out diagram 80386 microprocessor architecture microprocessor 80386 pin out diagram intel 80386 pin configuration of intel 80386

    1997 - TRANSISTOR t1p

    Abstract: BCX17 BCX18 BCX19 BCX20 BP317
    Text: , halfpage 3 3 DESCRIPTION 1 PNP transistor in a SOT23 plastic package. NPN complements: BCX19 and BCX20. 2 1 2 MARKING Top view TYPE NUMBER MAM256 MARKING CODE BCX17 T1p , . Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4


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    PDF M3D088 BCX17; BCX18 BCX19 BCX20. SCA53 117047/00/02/pp8 TRANSISTOR t1p BCX17 BCX18 BCX20 BP317

    LA 78141

    Abstract: tda 78141 sen 08161 TDA 2809 sn74ls612 386SX 146818 TTL LA 78141 edo 6166 l14f
    Text: OUT2 output of the timer. For driving the speaker, an open collector TTL buffer or a transistor with a


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    PDF TACT83000 D3612 TACT83442 256K-, 32-Bit 16-Bit SRZS001 LA 78141 tda 78141 sen 08161 TDA 2809 sn74ls612 386SX 146818 TTL LA 78141 edo 6166 l14f

    transistor smd R11

    Abstract: TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23
    Text: Power MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor


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    PDF NCP30653ABCKGEVB, NCP3065SOBCKGEVB, NCP3065SOBSTGEVB NCP3065/NCV3065 EVBUM2155/D transistor smd R11 TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23

    moc3041 dimmer

    Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
    Text: Lead Times · Unbeatable Quality · Technical Support 3 4 Pin DIL & SMD Optocouplers Transistor , potentials and impedances 4 Pin DIL & SMD Optocouplers (Part Numbers) Transistor Output ISP321-1 ISP521 , 6 Pin DIL & SMD Optocouplers Transistor Output AC Input Darlington Output Description , systems of different potentials and impedances 6 Pin DIL & SMD Optocouplers (Part Numbers) Transistor , DIL & SMD Optocouplers Part Numbers Transistor Output ISP321-2 ISP521-2 ISP621-2 ISP624-2 ISP827


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    PDF Unbeata140 PAA150 LAA100 LAA110 LAA126 LAA127 LAA120 LAA125 LCB110 LCB111 moc3041 dimmer tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh

    2008 - SMD Transistor dj rm

    Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
    Text: NIC Coilcraft NIC Murata NIC Murata Murata NCST12FR100FTRF NCST12FR100FTRF SMD 1206 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 NIC NIC generic generic generic , Barrier Rectifier 10uH 4.1A 10nF 25V X7R SMD 0603 47nF 25V X7R SMD 0603 4.7uF 50V X7R SMD 1206 , current feedback controller to control the MOSFET power switch through a ZXTC2045 gate drive transistor , gate drive circuitry. Q2 is a complementary BJT pair with the NPN transistor connected as a blocking


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    PDF ZXLD1320 curre41 SMD Transistor dj rm complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd SMD Transistor dj diode smd ed 49

    2009 - capacitor 10uF/63V

    Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
    Text: Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , MOSFET power transistor designed for pulsed applications at L-Band from 960MHz to 1215MHz. The high , Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , L-Band Avionics Pulsed PowerHigh Ruggedness HVV0912-150 High Voltage, Transistor 960-1215 MHz, Pulsed Power Transistor Pulsed Power Transistor 10% Avionics L-Band Avionics10µs Pulse,L-BandDuty Cycle For


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    PDF HVV0912-150 429-HVVi EG-01-DS11B capacitor 10uF/63V capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102

    2001 - saw Colpitts circuit design

    Abstract: smd transistor b2 transistor AE RF working of colpitts oscillator footprint qcc8c smd transistor footprint smd transistor AE TRANSISTOR SMD L3 AG SMD TRANSISTOR rf transistor smd pages
    Text: Application Note SAW-Components How to switch over from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators R8xx in QCC4A SMD package (3.5mm x 5mm) App. Note #23 Author: Updated , over from 4-pin SM-2 SAWR to EPCOS QCC4A Tips and tricks to switch over easily from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators in QCC4A SMD package (3.5mm x 5mm, 4 pins). General , gained profound knowhow in ceramic (metal lid) SMD package technology. For more than a decade, EPCOS SMD


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    PDF D-81617 saw Colpitts circuit design smd transistor b2 transistor AE RF working of colpitts oscillator footprint qcc8c smd transistor footprint smd transistor AE TRANSISTOR SMD L3 AG SMD TRANSISTOR rf transistor smd pages

    thx201

    Abstract: T2AL 250v 18w smd transistor induction cooker circuit diagram 250V T2AL T2AL 250v FUSE FUSE T2Al 250v T2AL fuse thx20 smd transistor 1k 10 ct
    Text: Feedback pin GND Current sense. Power Transistor Emitter drive output and start-up current input. Power Transistor Base drive output and start-up current control. Power Supply. Nov, 2007 www.Orister.com , output of VR. FB pull-up current source is turn off. OE inputs start-up current from power transistor to VCC. OB controls the base current of power transistor and limits the collector current (start-up accept current of RS2201) of power transistor so to safeguard the power transistor . When the VCC voltage


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    PDF RS2201 RS2201, RS2201 DS-RS2201-01 thx201 T2AL 250v 18w smd transistor induction cooker circuit diagram 250V T2AL T2AL 250v FUSE FUSE T2Al 250v T2AL fuse thx20 smd transistor 1k 10 ct

    2009 - smd transistor K2 pnp digital

    Abstract: BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD
    Text: , P-Channel NTF2955T1G ON Semiconductor SOT223 SMD Q5 General Purpose Transistor , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 , SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD , Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23


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    PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor K2 pnp digital BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD

    2007 - smd transistor Q5

    Abstract: SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc
    Text: Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 , Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD R1 100 mW, 0.5 W 2010 SMD R8 , NTF2955T1G ON Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON , Semiconductor SOT223 SMD 1 Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23


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    PDF AND8298 NCP3065/NCV3065 AND8298/D smd transistor Q5 SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc

    2002 - SMD TRANSISTOR j8

    Abstract: transistor SMD J9 transistor smd j6 j13 SMD Transistor smd transistor J6 transistor SMD wm transistor wm WM8762-EV1M WM8762EV1 SMD Transistor PNP 3pin
    Text: from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , % C9 1 0.01uF 0805 SMD Ceramic Capacitor 50V X7R C22 1 0.1uF 0805 SMD Ceramic Capacitor


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    PDF WM8762 WM8762 24-bit, 192kHz WM8762. WM8762-EV1B WM8762-EV1M SMD TRANSISTOR j8 transistor SMD J9 transistor smd j6 j13 SMD Transistor smd transistor J6 transistor SMD wm transistor wm WM8762EV1 SMD Transistor PNP 3pin

    Not Available

    Abstract: No abstract text available
    Text: transistor with a base resistor is necessary. Miscellaneous Signals NU 78- 81 Nonusable, make no


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    PDF TACT83000 flflb23 TACT83443 32-Bit A20GATE 387SX, 387DX, 128-Byte Four-Chi442 208-Lead

    2009 - UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications , MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 470MHz. The high , Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range , UHF Pulsed Power Transistor HVV0405-175 High Voltage, High Ruggedness UHF 420-470 MHz, 300µs Pulse, 10% Power Transistor UHF Pulsed Power TransistorPulsedDuty Cycle 420-470 MHz, Cycle For UHF band


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    PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    1996 - 3F smd transistor

    Abstract: transistor smd 3E smd transistor 3F transistor SMD g 28 smd transistor 3g smd transistor c6 15 TRANSISTOR SMD CODE 6.8 L5 smd transistor transistor smd list smd transistor 68 p
    Text: capacitors; q a SIEGET BFP 420 transistor and a CLY 2 GaAs power FET, both in SMD packages. The drain , Group: the SIEGET® BFP 420 bipolar transistor and CLY 2 GaAs FET. he power amplifier has been implemented as a discrete component with a SIEGET BFP 420 bipolar groundedemitter transistor as the driver and a CLY 2 GaAs field-effect transistor as the output amplifier. With an available input level of , as well as intermediate matching between the two transistors im- plemented with SMD capacitors


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    PDF

    2014 - MYXS00600-15DA0

    Abstract: silicon carbide R Y SMD TRANSISTOR
    Text: SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 Product Overview , Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 y r a in im l re P , €¢ www.micross.com SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 * Absolute , on request • Surface mount • Harsh environment motor drive Figure 1: SMD 0.5 â , (0) 1603 788967 • sales@micross.com • www.micross.com SiC Super Junction Transistor 600 Volt


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    PDF MYXS00600-15DA0 MIL-PRF-19500 MYXS00600-15DA0 silicon carbide R Y SMD TRANSISTOR

    Not Available

    Abstract: No abstract text available
    Text: 8 ,6) • Port P0 pu ll-u p transistor bit is set to “1". • Port P2 pull-up transistor , transistor bit sam e as above. (4) • Port P1 pull-up transistor bit Also, w h en the tim er 1 , u te d (in • C N T R pin pull-up transistor P 3 5/ S 0 u t output form at d e c im a l , €” V cc+ 0 - 3 V O utput transistor are “ o f f O utput voltage POo~P 0 7 , P 1 o ~ P 1 7 . , J VCc = 3 V H ysteresis IN T1p CNTR 0. 15 0. 7 H ysteresis P3g < -( + 1 < 1


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    PDF

    2014 - MYXS00650-07DA0

    Abstract: silicon carbide
    Text: SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 Product Overview , €¢ www.micross.com SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 y r a in , Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 * Absolute Maximum Ratings , on request • Surface mount • Harsh environment motor drive Figure 1: SMD 0.5 â , (0) 1603 788967 • sales@micross.com • www.micross.com SiC Super Junction Transistor 650 Volt


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    PDF MYXS00650-07DA0 MIL-PRF-19500 MYXS00650-07DA0 silicon carbide

    2003 - SMD transistor MARKING CODE 43

    Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor ; R1 = 10 , Semiconductors Product specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k FEATURES · , k NPN resistor-equipped transistor (see "Simplified outline, symbol and pinning" for package , specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k SIMPLIFIED OUTLINE, SYMBOL AND PINNING , specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k LIMITING VALUES In accordance with the


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    PDF PDTC114E resistor-equipPDTC114EE PDTC114EU PDTC114EEF SMD transistor MARKING CODE 43 TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D

    2008 - capacitor 10uF/63V

    Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
    Text: Transistor 400-500 MHz, 300s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications , . DESCRIPTION The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for , UHF Pulsed Power Transistor HVV0405-175 High UHF Pulsed Power Transistor Duty Cycle Voltage, High Ruggedness 400-500 MHz, 300µs Pulse, 10% 400-500 MHz, 300µs Pulse, 10%Pulsed Power Transistor For UHF band , UHF Pulsed Power Transistor UHF Pulsed Power Transistor 400-500 MHz, 300µs Pulse, 10% DutyMHz, 300s


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    PDF HVV0405-175 EG-01-DS10A 429-HVVi capacitor 10uF/63V ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS

    2014 - MYXS00650-15DA0

    Abstract: silicon carbide
    Text: SiC Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 Product Overview , €¢ www.micross.com SiC Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 y r a in , Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 * Absolute Maximum Ratings , €¢ Extremely fast switching • Switch power supplies Figure 1: SMD 0.5 • Screening options , ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com SiC Super Junction Transistor


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    PDF MYXS00650-15DA0 MYXS00650-15DA0 silicon carbide

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry , number of an SMD device from the package code can be a difficult task, involving combing through many , or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD , ' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    2008 - uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: Pulsed Power Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high , HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle 960-1215 MHz, 10µs Pulse , -150 High Voltage,HVV0912-150 High Voltage, High Ruggedness High Ruggedness UHF Pulsed Power Transistor


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    PDF HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
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