TRANSISTOR t1p
Abstract: T1P29C pa1b dissipator TO127 PA1-1U to220 transistor t1p29 transistor A953
Text: y-^bj 110 100 90 80 70 60 50 40 30 20 10 PA1-1U W/ T1P -29C (TO-220) TRANSISTOR r i , .375 110 100 90 80 70 60 50 40 30 20 10 0 PC1-1CB w/TIP-29C (TO-220) TRANSISTOR /A
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w/TIP-29C
O-220)
O-126,
O-127,
O-220
TRANSISTOR t1p
T1P29C
pa1b
dissipator
TO127
PA1-1U
to220 transistor
t1p29
transistor A953
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S6R-5-C200-N
Abstract: transistor C200 S6R-5-M50-P s6-5-M25 S6-1-C90 s6-5-c200 S6-1-C200 datasensor s6r-5-c200-p S6-5-C90 datasensor s6t-5-m25-p
Text: UNIVERSAL MIDI SENSORS 50 x 50 mm COMPACT SENSORS · · · · New background and foreground suppression models Free voltage versions with relay output 10-30 Vdc version with transistor output Standard cable or M12 connection S6 SERIES The S6 series, thanks to the excellent detection performances and the variety of power supply and connection possibilities, offers the most complete universal , S6T-5-B5-P polarised retroreflex S6-5-T1 retroreflex for transparents S6R-5- T1-P retroreflex for
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50x50
S6R-5-M50-P
S6R-5-M50-N
S6R-5-N20-P
S6R-5-N20-N
S6-5-F20
S6R-5-F20-P
S6R-5-F20-N
S6T-5-F20-P
S6-5-G20
S6R-5-C200-N
transistor C200
S6R-5-M50-P
s6-5-M25
S6-1-C90
s6-5-c200
S6-1-C200
datasensor s6r-5-c200-p
S6-5-C90
datasensor s6t-5-m25-p
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pin out of 80386 microprocessor
Abstract: 80386 microprocessor 80386 microprocessor functional block diagram pipeline architecture for 80386 80386 microprocessor pin out diagram 80386 microprocessor architecture microprocessor 80386 pin out diagram intel 80386 pin configuration of intel 80386 i80386
Text: ,000 transistor VLSI device fabricated in 1.5 micron CMOS technology. The Microcache is available in , MICROSYSTEMS A38152 Microcache A38152 STATE Tx 80386 STATE CYCLE 1 T1P T2P CYCLE 2 T1P T2P Ty T1P T2P T1P T2P clk2 sys-wr# sys-ack# Figure 4-4. Consecutive Bus Cycles 4.4.2 Exiting Pipelined Mode , STATE CYCLE 1 t1p T2P CYCLE 2 Ti T1P 80386 STATE clk2 T1P T2I addr, be# data m/io#, d/c , T1P TJT-fT-TL 1SL read addr.2 data in. 1 read cycle 1 I & read cy r\ :le 2 \J f\ T2P
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A38152
32-kilobyte
32-bit
84-pin
I80386
ADDR11
ADDR12
ADDR13
pin out of 80386 microprocessor
80386 microprocessor
80386 microprocessor functional block diagram
pipeline architecture for 80386
80386 microprocessor pin out diagram
80386 microprocessor architecture
microprocessor 80386 pin out diagram
intel 80386
pin configuration of intel 80386
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1997 - TRANSISTOR t1p
Abstract: BCX17 BCX18 BCX19 BCX20 BP317
Text: , halfpage 3 3 DESCRIPTION 1 PNP transistor in a SOT23 plastic package. NPN complements: BCX19 and BCX20. 2 1 2 MARKING Top view TYPE NUMBER MAM256 MARKING CODE BCX17 T1p , . Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 Note 1. Transistor mounted on an FR4
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M3D088
BCX17;
BCX18
BCX19
BCX20.
SCA53
117047/00/02/pp8
TRANSISTOR t1p
BCX17
BCX18
BCX20
BP317
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LA 78141
Abstract: tda 78141 sen 08161 TDA 2809 sn74ls612 386SX 146818 TTL LA 78141 edo 6166 l14f
Text: OUT2 output of the timer. For driving the speaker, an open collector TTL buffer or a transistor with a
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TACT83000
D3612
TACT83442
256K-,
32-Bit
16-Bit
SRZS001
LA 78141
tda 78141
sen 08161
TDA 2809
sn74ls612
386SX
146818
TTL LA 78141
edo 6166
l14f
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transistor smd R11
Abstract: TRANSISTOR SMD 1 KW transistor SOT23 J5 MBRS540LT3G EEEVFK1H221P transistor SMD g 28 TRANSISTOR SMD 85 330 SMD transistor r12 transistor SOT23 J6 smd transistor 24 sot23
Text: Power MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor , General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 100 mW, 0.5 W , MOSFET, P-channel NTF2955T1G ON Semiconductor SOT223 SMD General Purpose Transistor
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NCP30653ABCKGEVB,
NCP3065SOBCKGEVB,
NCP3065SOBSTGEVB
NCP3065/NCV3065
EVBUM2155/D
transistor smd R11
TRANSISTOR SMD 1 KW
transistor SOT23 J5
MBRS540LT3G
EEEVFK1H221P
transistor SMD g 28
TRANSISTOR SMD 85 330
SMD transistor r12
transistor SOT23 J6
smd transistor 24 sot23
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moc3041 dimmer
Abstract: tlp521 equivalent Application silicon bilateral switch light Dimmer QTC 4N35 Optocouplers QTC moc3023 dimmer MOC3011 optocoupler smd transistor b35 moc3042 KAQY212eh
Text: Lead Times · Unbeatable Quality · Technical Support 3 4 Pin DIL & SMD Optocouplers Transistor , potentials and impedances 4 Pin DIL & SMD Optocouplers (Part Numbers) Transistor Output ISP321-1 ISP521 , 6 Pin DIL & SMD Optocouplers Transistor Output AC Input Darlington Output Description , systems of different potentials and impedances 6 Pin DIL & SMD Optocouplers (Part Numbers) Transistor , DIL & SMD Optocouplers Part Numbers Transistor Output ISP321-2 ISP521-2 ISP621-2 ISP624-2 ISP827
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Unbeata140
PAA150
LAA100
LAA110
LAA126
LAA127
LAA120
LAA125
LCB110
LCB111
moc3041 dimmer
tlp521 equivalent
Application silicon bilateral switch light Dimmer
QTC 4N35
Optocouplers QTC
moc3023 dimmer
MOC3011 optocoupler
smd transistor b35
moc3042
KAQY212eh
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2008 - SMD Transistor dj rm
Abstract: complementary bipolar transistor driver schematic Z-Power P7 TRANSISTOR SMD mosfet driver cree mc-e driver TRANSISTOR SMD mosfet power 882 smd ZXLD1320 SMD Transistor dj diode smd ed 49
Text: NIC Coilcraft NIC Murata NIC Murata Murata NCST12FR100FTRF NCST12FR100FTRF SMD 1206 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 SMD 0805 / 0603 NIC NIC generic generic generic , Barrier Rectifier 10uH 4.1A 10nF 25V X7R SMD 0603 47nF 25V X7R SMD 0603 4.7uF 50V X7R SMD 1206 , current feedback controller to control the MOSFET power switch through a ZXTC2045 gate drive transistor , gate drive circuitry. Q2 is a complementary BJT pair with the NPN transistor connected as a blocking
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ZXLD1320
curre41
SMD Transistor dj rm
complementary bipolar transistor driver schematic
Z-Power P7
TRANSISTOR SMD mosfet driver
cree mc-e driver
TRANSISTOR SMD mosfet
power 882 smd
SMD Transistor dj
diode smd ed 49
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2009 - capacitor 10uF/63V
Abstract: capacitor 220uF/63V J152 100 pf, ATC Chip Capacitor pF CAPACITOR 100v 100b*500x 10uf 63v capacitor capacitor 1206 63V ID Innovations resistor smd 1206 102
Text: Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , MOSFET power transistor designed for pulsed applications at L-Band from 960MHz to 1215MHz. The high , Avionics Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS , L-Band Avionics Pulsed PowerHigh Ruggedness HVV0912-150 High Voltage, Transistor 960-1215 MHz, Pulsed Power Transistor Pulsed Power Transistor 10% Avionics L-Band Avionics10µs Pulse,L-BandDuty Cycle For
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HVV0912-150
429-HVVi
EG-01-DS11B
capacitor 10uF/63V
capacitor 220uF/63V
J152
100 pf, ATC Chip Capacitor
pF CAPACITOR 100v
100b*500x
10uf 63v capacitor
capacitor 1206 63V
ID Innovations
resistor smd 1206 102
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2001 - saw Colpitts circuit design
Abstract: smd transistor b2 transistor AE RF working of colpitts oscillator footprint qcc8c smd transistor footprint smd transistor AE TRANSISTOR SMD L3 AG SMD TRANSISTOR rf transistor smd pages
Text: Application Note SAW-Components How to switch over from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators R8xx in QCC4A SMD package (3.5mm x 5mm) App. Note #23 Author: Updated , over from 4-pin SM-2 SAWR to EPCOS QCC4A Tips and tricks to switch over easily from any 4 pin SMD SAW resonator to the new EPCOS SAW resonators in QCC4A SMD package (3.5mm x 5mm, 4 pins). General , gained profound knowhow in ceramic (metal lid) SMD package technology. For more than a decade, EPCOS SMD
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D-81617
saw Colpitts circuit design
smd transistor b2
transistor AE RF
working of colpitts oscillator
footprint qcc8c
smd transistor footprint
smd transistor AE
TRANSISTOR SMD L3
AG SMD TRANSISTOR
rf transistor smd pages
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thx201
Abstract: T2AL 250v 18w smd transistor induction cooker circuit diagram 250V T2AL T2AL 250v FUSE FUSE T2Al 250v T2AL fuse thx20 smd transistor 1k 10 ct
Text: Feedback pin GND Current sense. Power Transistor Emitter drive output and start-up current input. Power Transistor Base drive output and start-up current control. Power Supply. Nov, 2007 www.Orister.com , output of VR. FB pull-up current source is turn off. OE inputs start-up current from power transistor to VCC. OB controls the base current of power transistor and limits the collector current (start-up accept current of RS2201) of power transistor so to safeguard the power transistor . When the VCC voltage
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RS2201
RS2201,
RS2201
DS-RS2201-01
thx201
T2AL 250v
18w smd transistor
induction cooker circuit diagram
250V T2AL
T2AL 250v FUSE
FUSE T2Al 250v
T2AL fuse
thx20
smd transistor 1k 10 ct
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2009 - smd transistor K2 pnp digital
Abstract: BC817-LT1G k2 smd transistor EEEVFK1H221P transistor smd j6 AND8298 Nu SmD TRANSISTOR smd transistor J6 smd transistor 015 G 4.7 MF 50v CAPACITOR SMD
Text: , P-Channel NTF2955T1G ON Semiconductor SOT223 SMD Q5 General Purpose Transistor , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 , SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD , Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD 1 R1 , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23
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AND8298
NCP3065/NCV3065
AND8298/D
smd transistor K2 pnp digital
BC817-LT1G
k2 smd transistor
EEEVFK1H221P
transistor smd j6
AND8298
Nu SmD TRANSISTOR
smd transistor J6
smd transistor 015 G
4.7 MF 50v CAPACITOR SMD
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2007 - smd transistor Q5
Abstract: SMD Transistor 1f smd transistor 1k 10 ct smd transistor J3 resistor SMD footprint 2010 smd resistor SMD resistors 1f smd transistor transistor smd list SMD Transistors series nc
Text: Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23 , Transistor MMBT3904LT1G ON Semiconductor SOT23 SMD R1 100 mW, 0.5 W 2010 SMD R8 , NTF2955T1G ON Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON , Semiconductor SOT223 SMD 1 Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor , Semiconductor SOT223 SMD Q5 General Purpose Transistor MMBT3904LT1G ON Semiconductor SOT23
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AND8298
NCP3065/NCV3065
AND8298/D
smd transistor Q5
SMD Transistor 1f
smd transistor 1k 10 ct
smd transistor J3
resistor SMD footprint
2010 smd resistor
SMD resistors
1f smd transistor
transistor smd list
SMD Transistors series nc
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2002 - SMD TRANSISTOR j8
Abstract: transistor SMD J9 transistor smd j6 j13 SMD Transistor smd transistor J6 transistor SMD wm transistor wm WM8762-EV1M WM8762EV1 SMD Transistor PNP 3pin
Text: from the WM8762EV1 evaluation board, a transistor clamp circuit arrangement has been added to the , evaluation board, PNP transistor Q1 of the trigger circuit is held on until capacitor C9 is fully charged. With transistor Q1 held `on', NPN transistors Q3 and Q4 of the clamp circuits are also switched on , evaluation board, PNP transistor Q2 of the trigger circuit is switched on. In turn, transistors Q3 and Q4 of , % C9 1 0.01uF 0805 SMD Ceramic Capacitor 50V X7R C22 1 0.1uF 0805 SMD Ceramic Capacitor
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WM8762
WM8762
24-bit,
192kHz
WM8762.
WM8762-EV1B
WM8762-EV1M
SMD TRANSISTOR j8
transistor SMD J9
transistor smd j6
j13 SMD Transistor
smd transistor J6
transistor SMD wm
transistor wm
WM8762EV1
SMD Transistor PNP 3pin
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Not Available
Abstract: No abstract text available
Text: transistor with a base resistor is necessary. Miscellaneous Signals NU 78- 81 Nonusable, make no
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TACT83000
flflb23
TACT83443
32-Bit
A20GATE
387SX,
387DX,
128-Byte
Four-Chi442
208-Lead
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2009 - UHF TRANSISTOR
Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
Text: Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications , MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 470MHz. The high , Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range , UHF Pulsed Power Transistor HVV0405-175 High Voltage, High Ruggedness UHF 420-470 MHz, 300µs Pulse, 10% Power Transistor UHF Pulsed Power TransistorPulsedDuty Cycle 420-470 MHz, Cycle For UHF band
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HVV0405-175
429-HVVi
EG-01-DS10B
05/XX/09
UHF TRANSISTOR
J152-ND
J151-ND
RF MOSFET CLASS AB
Coaxicom
transistor SMD g 28
100B100JP500X
RC1206JR-07100KL
smd transistor 259
4404 mosfet
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1996 - 3F smd transistor
Abstract: transistor smd 3E smd transistor 3F transistor SMD g 28 smd transistor 3g smd transistor c6 15 TRANSISTOR SMD CODE 6.8 L5 smd transistor transistor smd list smd transistor 68 p
Text: capacitors; q a SIEGET BFP 420 transistor and a CLY 2 GaAs power FET, both in SMD packages. The drain , Group: the SIEGET® BFP 420 bipolar transistor and CLY 2 GaAs FET. he power amplifier has been implemented as a discrete component with a SIEGET BFP 420 bipolar groundedemitter transistor as the driver and a CLY 2 GaAs field-effect transistor as the output amplifier. With an available input level of , as well as intermediate matching between the two transistors im- plemented with SMD capacitors
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2014 - MYXS00600-15DA0
Abstract: silicon carbide R Y SMD TRANSISTOR
Text: SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 Product Overview , Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 y r a in im l re P , ¢ www.micross.com SiC Super Junction Transistor 600 Volt 15 Amp Hermetic SMD MYXS00600-15DA0 * Absolute , on request ⢠Surface mount ⢠Harsh environment motor drive Figure 1: SMD 0.5 â , (0) 1603 788967 ⢠sales@micross.com ⢠www.micross.com SiC Super Junction Transistor 600 Volt
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MYXS00600-15DA0
MIL-PRF-19500
MYXS00600-15DA0
silicon carbide
R Y SMD TRANSISTOR
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Not Available
Abstract: No abstract text available
Text: 8 ,6) ⢠Port P0 pu ll-u p transistor bit is set to â1". ⢠Port P2 pull-up transistor , transistor bit sam e as above. (4) ⢠Port P1 pull-up transistor bit Also, w h en the tim er 1 , u te d (in ⢠C N T R pin pull-up transistor P 3 5/ S 0 u t output form at d e c im a l , V cc+ 0 - 3 V O utput transistor are â o f f O utput voltage POo~P 0 7 , P 1 o ~ P 1 7 . , J VCc = 3 V H ysteresis IN T1p CNTR 0. 15 0. 7 H ysteresis P3g < -( + 1 < 1
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2014 - MYXS00650-07DA0
Abstract: silicon carbide
Text: SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 Product Overview , ¢ www.micross.com SiC Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 y r a in , Super Junction Transistor 650 Volt 7 Amp Hermetic SMD MYXS00650-07DA0 * Absolute Maximum Ratings , on request ⢠Surface mount ⢠Harsh environment motor drive Figure 1: SMD 0.5 â , (0) 1603 788967 ⢠sales@micross.com ⢠www.micross.com SiC Super Junction Transistor 650 Volt
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MYXS00650-07DA0
MIL-PRF-19500
MYXS00650-07DA0
silicon carbide
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2003 - SMD transistor MARKING CODE 43
Abstract: TRANSISTOR SMD MARKING CODE A1 TRANSISTOR SMD MARKING CODE 42 SMD Transistor A1 TC114E smd TRANSISTOR code marking 36 smd TRANSISTOR code marking 013 Transistor SMD marking code NV smd transistor 023 TRANSISTOR SMD MARKING CODE X D
Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor ; R1 = 10 , Semiconductors Product specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k FEATURES · , k NPN resistor-equipped transistor (see "Simplified outline, symbol and pinning" for package , specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k SIMPLIFIED OUTLINE, SYMBOL AND PINNING , specification NPN resistor-equipped transistor ; R1 = 10 k, R2 = 10 k LIMITING VALUES In accordance with the
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PDTC114E
resistor-equipPDTC114EE
PDTC114EU
PDTC114EEF
SMD transistor MARKING CODE 43
TRANSISTOR SMD MARKING CODE A1
TRANSISTOR SMD MARKING CODE 42
SMD Transistor A1
TC114E
smd TRANSISTOR code marking 36
smd TRANSISTOR code marking 013
Transistor SMD marking code NV
smd transistor 023
TRANSISTOR SMD MARKING CODE X D
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2008 - capacitor 10uF/63V
Abstract: ds10a capacitor 100uF 50V capacitor 1206 63V hex head screws 10uf 63v capacitor AB-45 banana socket datasheet diode gp 429 SMD 1206 RESISTOR 100 OHMS
Text: Transistor 400-500 MHz, 300s Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications , . DESCRIPTION The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for , UHF Pulsed Power Transistor HVV0405-175 High UHF Pulsed Power Transistor Duty Cycle Voltage, High Ruggedness 400-500 MHz, 300µs Pulse, 10% 400-500 MHz, 300µs Pulse, 10%Pulsed Power Transistor For UHF band , UHF Pulsed Power Transistor UHF Pulsed Power Transistor 400-500 MHz, 300µs Pulse, 10% DutyMHz, 300s
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HVV0405-175
EG-01-DS10A
429-HVVi
capacitor 10uF/63V
ds10a
capacitor 100uF 50V
capacitor 1206 63V
hex head screws
10uf 63v capacitor
AB-45
banana socket datasheet
diode gp 429
SMD 1206 RESISTOR 100 OHMS
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2014 - MYXS00650-15DA0
Abstract: silicon carbide
Text: SiC Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 Product Overview , ¢ www.micross.com SiC Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 y r a in , Super Junction Transistor 650 Volt 15 Amp Hermetic SMD MYXS00650-15DA0 * Absolute Maximum Ratings , ¢ Extremely fast switching ⢠Switch power supplies Figure 1: SMD 0.5 ⢠Screening options , ROW) +44 (0) 1603 788967 ⢠sales@micross.com ⢠www.micross.com SiC Super Junction Transistor
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MYXS00650-15DA0
MYXS00650-15DA0
silicon carbide
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry , number of an SMD device from the package code can be a difficult task, involving combing through many , or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD , ' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum
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BZV49
BZV55
500mW
BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
SMD Codes
TRANSISTOR SMD T1P
MMBD2104
BAW92
smd transistor A6a
schottky diode s6 81A
a4s smd transistor
Transistor SMD a7s
transistor SMD P2F
MMBD2101
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2008 - uhf 150w mosfet
Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
Text: Pulsed Power Transistor 960-1215 MHz, 10s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF , power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high , HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor HVV0912-150 High Voltage, High Ruggedness UHF Pulsed Power Transistor 960-1215 MHz, 10µs Pulse, 10% Duty Cycle 960-1215 MHz, 10µs Pulse , -150 High Voltage,HVV0912-150 High Voltage, High Ruggedness High Ruggedness UHF Pulsed Power Transistor
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HVV0912-150
121eliable.
EG-01-DS11A
or429-HVVi
uhf 150w mosfet
10uF CAPACITOR 1210 PACKAGE
capacitor 10uF/63V
smd transistor EK
10uf 63v capacitor
50V 1215MHZ
banana socket datasheet
capacitor 220uF/63V
diode gp 429
DS2346
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