2000 - Not Available
Abstract: No abstract text available
Text: Controller M em ory Bus DDR M em ory LX1671 TA (°C) 0 to 70 Copyright 2000 Rev. 0.5f , . CS2 VS2 SS1 FB1 EO1 CS1 VS1 (Top View) PACKAGE DATA Copyright 2000 Rev. 0.5f , 2002-04-03 , Copyright 2000 Rev. 0.5f , 2002-04-03 Microsemi Integrated Products, Power Management 11861 Western , 230 4.0 0.1 200 3.0 10 0.25 255 345 ELECTRICALS Copyright 2000 Rev. 0.5f , Units ! .816 ! ELECTRICALS Copyright 2000 Rev. 0.5f , 2002-04-03 Microsemi Integrated
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LX1671
LX1671
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1999 - 20c15
Abstract: SYM20C15 20c15 Hart Modem DN25D HART BELL 202 J120 MOSFET hart protocol hart J119 transistor depletion mode mosfet
Text: transistor Q1 (DN25D depletion mode MOSFET), in association with the internal op amp and voltage reference on , external pass transistor (Q2) is added to reduce the power loading on the depletion mode MOSFET Q1. BOOST 40k 80k 40 LOOP RTN LOOP() C1 C2 C3 C1 0.01F C2 0.5F C3 0.16F , second section, an operational amplifier and NPN transistor which acts as a current amplifier to set the current flowing from the LOOP RTN pin. The base drive to the NPN transistor servos the voltage
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AN-534
AD421,
20C15*
AD421
16-lead
J1-19
J1-20
28F0195-100
J1-21
J1-22
20c15
SYM20C15
20c15 Hart Modem
DN25D
HART BELL 202
J120 MOSFET
hart protocol
hart
J119 transistor
depletion mode mosfet
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Not Available
Abstract: No abstract text available
Text: products are used in such equipment or applications without prior consultation with TOSHIBA. TA78M 05F - , V IN 40 PD a o I- TA78M 05F TA78M 06F TA78M 08F TA78M 09F TA78M 10F Input V oltage , TA78M 05F - 2 1 9 9 4 -3 -7 T O SH IB A CORPORATION INTEGRATED TO SH IB A CIRCUIT t e c h , TA78M20F, TA78M24F TA78M 05F ELECTRICAL CHARACTERISTICS (V|n = 10V, lo U T = 350mA, 0 ° C â T jà , oltage A verage Tem perature Coefficient o f O utput V oltage 60 TA78M 05F - 3 1 9 9 4 -3 -7 T
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TA78M05F,
TA78M06F,
TA78M08F,
TA78M09F
TA78M10F,
TA78M12F,
TA78M15F,
TA78M18F
TA78M20F,
TA78M24F
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lm35 to 1-5 volts
Abstract: LM34 LM34AH LM34C LM34CA LM34CH LM34D LM34H LM35
Text: , 0.18°F in still air · Nonlinearity only ± 0.5°F typical · Low-impedance output, 0.4Ohm for 1 mA load , hermetic TO-46 transistor packages, while the LM34C, LM34CA and LM34D are also available in the plastic TO-92 transistor package. The LM34D is also available in an 8-lead surface mount small outline package. The LM34 , still air Nonlinearity only ± 0.5°F typical Low-impedance output, 0.4 for 1 mA load Connection
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LM34H,
LM34AH,
LM34CH,
LM34CAH
LM34DH
lm35 to 1-5 volts
LM34
LM34AH
LM34C
LM34CA
LM34CH
LM34D
LM34H
LM35
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LM34
Abstract: LM34CAZ LM34DM LM34AH LM34C LM34CA LM34CH LM34D LM34H LM35
Text: , 0.18°F in still air · Nonlinearity only ± 0.5°F typical · Low-impedance output, 0.4Ohm for 1 mA load , hermetic TO-46 transistor packages, while the LM34C, LM34CA and LM34D are also available in the plastic TO-92 transistor package. The LM34D is also available in an 8-lead surface mount small outline package. The LM34 , still air Nonlinearity only ± 0.5°F typical Low-impedance output, 0.4 for 1 mA load Connection
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DS006685-19
LM34CZ,
LM34CAZ
LM34DZ
LM34
LM34DM
LM34AH
LM34C
LM34CA
LM34CH
LM34D
LM34H
LM35
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1998 - 20c15
Abstract: DN25D SYM20C15 HART HART BELL 202 hart protocol 28F0195-100 AD421-20C15 hart modem AD421
Text: transistor around the reference is used to back off the potentially high loop voltage from the reference , the programmed loop current. The pass transistor Q2 sinks the current from the loop into the BOOST , circuitry. The external NPN transistor , Q2, reduces the external current load that the reference has to supply. If the pass transistor is not included, the reference may go unstable when asked to supply , 0.5F C3 0.16F CC FROM 20C15 Figure 3. AD421 Current Control Circuitry The DAC output
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AN-534
AD421,
20C15*
AD421
16-lead
J1-19
J1-20
28F0195-100
J1-21
J1-22
20c15
DN25D
SYM20C15
HART
HART BELL 202
hart protocol
28F0195-100
AD421-20C15
hart modem
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1997 - TSDF1205R
Abstract: TSDF1205
Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies. Features D Low-power applications D Very low noise figure D High transition frequency fT = 12 GHz 2 , : 05F Plastic case (SOT 143) 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter Absolute Maximum
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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Not Available
Abstract: No abstract text available
Text: T fmtt Semiconductors TSDF1205/TSDF1205R Electrostatic sensitive device. ^ Observe precautions for handling. M Silicon NPN High Frequency Transistor Applications Features · Low-power applications · Very low noise figure · High transition frequency fj- = 12 GHz For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF , ; 3 = Base; 4 = Emitter TSDF1205R Marking: 05F Plastic case (SOT 143) 1 = Collector; 2 = Emitter; 3
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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2002 - 2SD2165
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin-molded insulation , . Not all devices/types available in every country. Please check with local NEC representative for
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2SD2165
2SD2165
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1999 - Not Available
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure D , Emitter TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 =
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
20-Jan-99
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Not Available
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure D , Emitter TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 =
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
30-Jun-00
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2004 - Not Available
Abstract: No abstract text available
Text: VISHAY TSDF1205 / 1205R / 1205W / 1205RW Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 Features · Low power applications · Very low noise figure · High transition frequency fT = 12 GHz 3 1 4 2 SOT-143 SOT-143R Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and , TSDF1205W F05 05F WF0 W0F Marking SOT-143 SOT-143R SOT-343R SOT-343 Package Document Number 85065 Rev
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TSDF1205
1205R
1205RW
OT-143
OT-143R
OT-343
OT-343R
OT-143
TSDF1205R
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2004 - 2SD2165
Abstract: NEC marking b
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat
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2SD2165
2SD2165
NEC marking b
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2SD2165
Abstract: nec transistor Transistor NEC 30
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2165 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2165 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , transistors, but it is a single transistor . 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 3 ±0.1 mounting cost , In addition, this transistor features a small resin-molded 4 ±0.2 · High hFE and low VCE(sat
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2SD2165
2SD2165
nec transistor
Transistor NEC 30
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2002 - D1615
Abstract: transistor ab2 12
Text: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1578 QUALITY GRADES Electrode connection 1. Emitter 2. Collector 3.Base · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E
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2SD2425
2SD2425
2SB1578
C11531E)
D1615
transistor ab2 12
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2002 - darlington transistor for audio power application
Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor . This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for , to darlington connection · Large current capacitance and low VCE(sat) · TO-126 power transistor with high power dissipation · Complementary transistor with 2SC4342 QUALITY GRADES · Standard
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2SA1714
2SA1714
O-126
2SC4342
C11531E)
darlington transistor for audio power application
2SC4342
C11531E
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2002 - Not Available
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SD2403 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2403 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for DC/DC , Complementary transistor with 2SB1572 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Symbol , local NEC representative for availability and additional information. Document No. D16156EJ2V0DS00
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2SD2403
2SD2403
2SB1572
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TSDF1205RW
Abstract: TSDF1205 TSDF1205R TSDF1205W
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure , TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 1 1
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205R
TSDF1205W
D-74025
30-Jun-00
TSDF1205RW
TSDF1205
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2004 - 2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR , a high-speed Darlington power transistor . PART NUMBER PACKAGE 2SA1841 MP-10 This transistor is ideal for high-precision control such as PWM control for pulse motors brushless motors in OA and FA equipment. In addition, this transistor features a package that can be automounted in radial , in every country. Please check with an NEC Electronics sales representative for availability and
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2SA1841
2SA1841
MP-10
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2002 - 2SB1430
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is , transistor features a small resin-molded insulation type package, thus contributing to high-density mounting , version. Not all devices/types available in every country. Please check with local NEC representative , change without notice. For actual design-in, refer to the latest publications of NEC 's data sheets or
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2SB1430
2SB1430
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2001 - Not Available
Abstract: No abstract text available
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure D , Emitter TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 =
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205
TSDF1205R
D-74025
30-Jun-00
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2001 - TSDF1205R
Abstract: TSDF1205RW TSDF1205W TSDF1205 Transistor TSDF1205R marking W0F
Text: TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. Features D Low power applications D Very low noise figure , TSDF1205R Marking: 05F Plastic case (SOT 143R) 1 = Collector, 2 = Emitter, 3 = Base, 4 = Emitter 1 1
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TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
TSDF1205R
TSDF1205W
D-74025
30-Jun-00
TSDF1205RW
TSDF1205
Transistor TSDF1205R
marking W0F
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2002 - 2SD2164
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially PACKAGE DRAWING (UNIT: mm) for high hFE. This transistor is ideal for simplifying drive , it is a single transistor . In addition, this transistor features a small resin insulated package , . Not all devices/types available in every country. Please check with local NEC representative for
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2SD2164
2SD2164
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2002 - NEC semiconductor
Abstract: 2sd2217 transistor PT 4500 C11531E NEC C11531E
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2217 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON , transistor developed for lowfrequency power amplifiers and low-speed switching. PACKAGE DRAWING (UNIT: mm) This transistor is ideal for direct driving from the IC out to drivers such as pulse motor drivers , Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the , country. Please check with local NEC representative for availability and additional information
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2SD2217
2SD2217
C11531E)
NEC semiconductor
transistor PT 4500
C11531E
NEC C11531E
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2002 - NEC semiconductor
Abstract: C11531E dumper diode dumper
Text: DATA SHEET COMPOUND TRANSISTOR CE2A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The CE2A3Q is a transistor of on-chip high hFE resistor PACKAGE DRAWING (UNIT: mm) incorporating dumper diode in collector to emitter as protect elements. This transistor is ideal for actuator , diode for reverse cable QUALITY GRADES · Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of
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C11531E)
NEC semiconductor
C11531E
dumper
diode dumper
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