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    transistor smd a7s Datasheets

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    BD9G102G-LB ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade) Visit ROHM Semiconductor
    BD9G341AEFJ ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET Visit ROHM Semiconductor
    BD9G101G ROHM Semiconductor Step-down Switching Regulators with Built-in Power MOSFET Visit ROHM Semiconductor
    BD9E104FJ ROHM Semiconductor 7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9A600MUV ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9G341AEFJ-LB ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade) Visit ROHM Semiconductor

    transistor smd a7s Datasheets Context Search

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    2000 - written

    Abstract: free transistor a7s A7s TRANSISTOR vhdl code for 4 bit barrel shifter 4x4 barrel shifter with flipflop 4MX32 using 512KX8 chips ORCAD BOOK 8051 with zero crossing detector and ldr metal detector service manual vhdl code for barrel shifter
    Text: Triscend A7S Configurable System-on-Chip Platform ® August, 2002 (Version 1.10) Product , . Block diagram of the Triscend A7S Configurable System-on-Chip (CSoC). © 2000-2002 by Triscend Corporation. All rights reserved. Patents Pending. TCH305-0001-002 Triscend A7S Configurable System-on-Chip Platform Table 1. Triscend A7S Configurable System-on-Chip Family Device TA7S04 TA7S20 , TCH305-0001-002 System Overview The Triscend A7S Configurable System-on-Chip (CSoC) device is a


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    PDF 32-bit 16Kbyte 455Mbytes Estimates215 written free transistor a7s A7s TRANSISTOR vhdl code for 4 bit barrel shifter 4x4 barrel shifter with flipflop 4MX32 using 512KX8 chips ORCAD BOOK 8051 with zero crossing detector and ldr metal detector service manual vhdl code for barrel shifter

    Not Available

    Abstract: No abstract text available
    Text: epitaxial transistor primarily intended for use as a driver-stage in base stations in the 900 MHz , metallization ensures excellent reliability The transistor has a 4-lead stud envelope with a ceramic cap , K/W July 1986 APX N AUER PHILIPS/DISCRETE b^E U.H.F. power transistor D bbSBTBl , . power transistor 1 l 7 Z 97535 . • * /*.:£&♦ * *- ^ ^ VV^S'V* Vj J j , bb53T31 □ D 2 t U'14 A7S D JL 100 % [% ) 50 0 0,1 0,2 0,3 0,4 PS (W


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    PDF BLV99 OT172A1) OT172A1. bbS3T31 7Z94683 7Z94684 7Z94685 960MHz;

    Not Available

    Abstract: No abstract text available
    Text: i, U na. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ 10005 Darlington transistor is designed for high-voltage, high-speed, power , Inductive Storage Time — 25°C (Typ) h . «7S -J MAX. \ 135 MAX. TO-3 SEATING Operating


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    PDF MJ10005 250Vdc,

    ferroxcube wideband hf choke

    Abstract: BLV99 002im3
    Text: TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use as a driver-stage in base , temperature profile • gold metallization ensures excellent reliability The transistor has a 4-lead stud , PHILIPS/DISCRETE U.H.F. power transistor bTE D bbSBIBl □DE'ìni Qbb «APX BLV99 CHARACTERISTICS Tj , blE 1> ■bbS3^31 002«îM3 13 e! «APX BLV99 U.H.F. power transistor Jl Fig. 6 Printed-circuit , » m bbS3^31 □D2tiltm Ö7S *APX A Pl (W


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    PDF BLV99 OT172A1) OT172A1. 960MHz; ferroxcube wideband hf choke BLV99 002im3

    A7s TRANSISTOR

    Abstract: free transistor a7s
    Text: GENNUM C O R P O R A T I N a-7s GENLINX D2 SERIAL DIGITAL CABLE EQUALIZER - GS9006A Preliminary Data Sheet FEATURES · automatic equalization up to 350 metres of 8281 cable at 143 MB/s data rates. · 8 pin PDIP packaging · single -5 volt power supply operation DEVICE DESCRIPTION The Gennum G ENLINX GS9006A is a monolithic automatic cable equalizer developed for scram bled NRZI Serial Digital , to boost the output signal swing will cause damage to the output stages. Discrete transistor


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    PDF GS9006A GS9006A A7s TRANSISTOR free transistor a7s

    Not Available

    Abstract: No abstract text available
    Text: DESCRIPTION The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications , * * i \ F .1 0 3 /2 ,6 7 -L20/a05 G .3 3 7 /1 4 ,1 3 .3 6 7 /1 4 ,4 0 H ■7S 5


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    PDF SD1530-08 SD1530-08

    2N403G

    Abstract: 2N1036 2n4036 2N403 2N4037 2N4031 N4C36 2N4D37
    Text: leitrj! on a eurk-r tra-*: 2N4036 2N4037 TO-39 .TO- 5 GENERAL PURPOSE TRANSISTOR FNP SILICON , tili . Û7S 0 34 Klif., CULLICiORTO lmiîilh SiTWUTUW VO'JAGl |V1 MAXIMUM SAPg OPERATING AREAS (SOAj


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    PDF 02-RUG-2000 2N4037 2N4036MT -J5A51 2N403G 2N1036 2n4036 2N403 2N4031 N4C36 2N4D37

    STH80N05

    Abstract: C5632 C8052 STW80N05 q04sn STH80N05FI DIODE YV 950 gc229 MN14
    Text: ■7^237 pcms^i na «SGTH _ SGS-THOMSON STH80N05/FI STW80N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Vdss Rps(on)_[d_ STH80N05 50 V < 0.012 £2 80 A STH80N05FI 50 V < 0.012 £2 52 A STW80N05 50 V < 0.012 Q 80 A . TYPICAL RDS(on) = 0.011 ii . AVALANCHE RUGGED TECHNOLOGY ■100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE . VERY HIGH CURRENT , 7121237 0045113 Ö7S ■SGTH STH80N05/FI-STW80N05 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON


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    PDF STH80N05/FI STW80N05 STH80N05 STH80N05FI STW80N05 7T2TE37 STH80N05/FI-STW80N05 C5632 C8052 q04sn DIODE YV 950 gc229 MN14

    2SB1340

    Abstract: ct 1975 2SD1889 SC-75A two transistors TO-126F 4B0G
    Text: freauencv of mounted transistor . Tflgfin1! DOlb^ Ô7S (96-765-D88) 274 ¿pis waperT^1 coPArTdpteq bA Ifs , Transistors 2SB1340 2SD1889 I Power Transistor (—'120V, —6A) 2SB1340 •Future* 1 , =1MHz * 1 Measured using pulse current. * 2 Transition frequency of mounted transistor . (96-650-B88) I Power Transistor (120V, 6A) 2SD1889 •Features 1 ) Darlington connection for high DC current gain , 's smallest transistor with a mold size of 1.6 X 0.8 mm. The mounting area is approximately 60% of the UMT3


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    PDF 2SB1340 2SD1889 2SB1340 2SD1889. 0Glb713 O-220FN O-220FP T0-220FP, T0-220FP. ct 1975 2SD1889 SC-75A two transistors TO-126F 4B0G

    TLP137

    Abstract: E67349 TLP137BV
    Text: TOSHIBA TLP137 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP137 OFFICE MACHINE PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP137 is a small outline coupler, suitable for surface mount assembly. TLP137 consists of a gallium arsenide infrared emitting diode, optically coupled to a photo transistor , and provides high CTR at low input current , u— - ¡7S ( 1 r- 1—K > fi VCB=0V VCB


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    PDF TLP137 TLP137 E67349 TLP137BV

    Not Available

    Abstract: No abstract text available
    Text: voltage and controls the base of the series PNP transistor via a buffer. Saturation control as a function , T L E 426 1 G Block Diagram fiSBSbOS Semiconductor Group 74 Ô7S SIEMENS TLE 4261 , ”Û SIEMENS TLE 4261 Package Outlines P-T0220-7-1 (Plastic Transistor Single Outline) 4 .6 , 10 , approx. 2.1 g Im Dlohtstegberelch (max. 1.8 vom Kdrper) P-T0220-7-2 (Plastic Transistor Single


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    PDF Q67000-A9003 P-T0220-7-1 Q67000-A9109 P-T0220-7-2 Q67000-A9059 P-DSO-20-6 DSO-20-6 35x45â FT271

    Not Available

    Abstract: No abstract text available
    Text: to V ref/2 voltage. Also, a feedback transistor and capacitor can be connected between the error amp , 0.65 V ), the latch circuit will operate to turn the output transistor off and at the same time set , transistor off and at the same time setting the dead time to 100% and holding the SCP pin (pin 14) at , lower than either the error amp output or the DTC pin voltage, the output transistor is switched on , provide a soft start function. 7. Output Transistor The output is open-collector type, with the emitter


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    PDF DS04-27205-4E MB3782 MB3782 MB3782P DIP-20P-M01) MB3782PF FPT-20P-M01) 374175L.

    Transistor SMD a7s

    Abstract: SMD MARKING ACSN AEB02439 AEP02438 AET02177 AET02181 D103 TLE4278G D103a21 smd transistor ab2
    Text: , the dissipated power peak can be significantly reduced by activating the transistor located parallel , 1.05 1.20 — ■Û235b05 D1D3Ö24 Ö7S Bi Semiconductor Group 550 1998-02-01 This Material , , trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device


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    PDF P-DSO-14-4 AEB02441 fl235bD5 P-DSO-14-4 GPS05093 235b05 D103A21 Transistor SMD a7s SMD MARKING ACSN AEB02439 AEP02438 AET02177 AET02181 D103 TLE4278G smd transistor ab2

    Transistor SMD a7s

    Abstract: D1D3A24
    Text: , the dissipated power peak can be significantly reduced by activating the transistor located parallel , €” ■Û2 35b 05 Semiconductor Group - D1D3A24 Ô7S ■550 1998-02-01 SIEM ENS , Information”. SMD = Surface Mounted Device Dimensions in mm ■Semiconductor Group fl£35bD5 O I


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    PDF 23SbG5 P-DSO-14-4 35bD5 Transistor SMD a7s D1D3A24

    A7s TRANSISTOR

    Abstract: Transistor a7s
    Text: .D erate Linearity at 12 m W /°C to 2 00 m W DEVICE DISSIPATION PER OUTPUT TRANSISTOR FOR TA - FULL , Voo -H - 6 >· 2 3 E - K« 4 5 - 6 7 »4 - v00 6 H J l B- j* À7S - k 13 - 12 - II - 10


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    PDF CD4001B CD4002B, 4025B 20-Volt CD4001B CD4002B A7s TRANSISTOR Transistor a7s

    a872 TRANSISTOR equivalent

    Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
    Text: Figure 4. For low noise circuits, Rg usually goes to zero, since the transistor is normally biased for , impedance is 50 ohms. The equivalent circuit for the transistor circuit in Figure 7 can be changed to that , u t resistance of the transistor . The quantitative degradation in noise figure emitter resistor can , ation excludes the actual Letting Z-lri = Rout = R L = 50 ohms transistor and its noise properties from , the gain of the bipolar transistor is significantly reduced by feedback,its openloop noise


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    PDF HP340B a872 TRANSISTOR equivalent WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F

    SMD l4fl

    Abstract: smd TRANSISTOR code marking w2 qml-38535 CDFP4-F16 40109B Transistor SMD a7s transistor 5Cv smd
    Text: Device dissipation per output transistor .100 mW Storage , Drawings ( SMD 's). Standardized Military Drawings. (Copies of the specification, standards, bulletin, and , A REVISION LEVEL 5962-96645 SHEET DESC FORM 193A JUL 94 m 100470Ö 00S0bû3 Ö7S TABLE I. Electrical , control of SMD 's. All proposed changes to existing SMD 's will be coordinated with the users of record for , which SMD 's are applicable to that system. DESC will maintain a record of users and this list will be


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    PDF MIL-BUL-103. MIL-BUL-103 JUL94 T0D47Qà 0D20fa SMD l4fl smd TRANSISTOR code marking w2 qml-38535 CDFP4-F16 40109B Transistor SMD a7s transistor 5Cv smd

    2009 - MAC7100RM

    Abstract: transistor B595 btm 110 bluetooth eim 630 466 BLUETOOTH MODULE BTM B605 transistor equivalent bluetooth btm 330 Btm 220 bluetooth L38Y ovc Bluetooth
    Text: Services Module (SSM) Debug Interface A7S Nexus 2 Module Register Memory Map Quick Reference Mask Set , ) Periodic Interrupt Timer Module (PIT) System Services Module (SSM) Debug Interface A7S Nexus 2 Module


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    PDF MAC7100 MAC7101 MAC7111 MAC7116 MAC7122 MAC7131 MAC7141 MAC7106 MAC7112 MAC7121 MAC7100RM transistor B595 btm 110 bluetooth eim 630 466 BLUETOOTH MODULE BTM B605 transistor equivalent bluetooth btm 330 Btm 220 bluetooth L38Y ovc Bluetooth

    1995 - 24v transformer

    Abstract: a6s transistor application circuits of ic 74121 A7s TRANSISTOR transistor A6S 74121 one shot A1S sh simple proportional pulse stretcher AN-266 LF398
    Text: exceeds this reference A2 readjusts switching transistor Q3's supply voltage to the correct level , pulse (A) and the switching transistor 's drive Modulated by the analog input signal Q2's (and therefore , ) provide a delayed sample command 5 hold amplifier) and Trace D is A7's output Trace E shows the


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    Transistor SMD a7s

    Abstract: smd marking A7s smd A7s smd TRANSISTOR a7s smd transistor b35 qml-38535 A7s TRANSISTOR 4516B CDFP4-F16 4516BN
    Text: Device dissipation per output transistor .100 mW Storage temperature , -103 HANDBOOK MILITARY MIL-HDBK-780 List of Standard Microcircuit Drawings ( SMD 's). Standardized Military , TGD470fl G017713 A7S Table III. Irradiation test connections, y Open Ground VDD = 10 v ±0-5 v 2. 6. 7, 11 , class 0 devices will replace device class M devices. 6.2 Configuration control of SMD 's. All proposed changes to existing SMD 's will be coordinated with the users of record for the individual documents. This


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    PDF MIL-BUL-103. MIL-BUL-103 GD1771S Transistor SMD a7s smd marking A7s smd A7s smd TRANSISTOR a7s smd transistor b35 qml-38535 A7s TRANSISTOR 4516B CDFP4-F16 4516BN

    Not Available

    Abstract: No abstract text available
    Text: drain bias 7 VL Protective transistor bias 17 RG Reset gate clock 8 GND GND , A V rgl -3 +3 % Protective transistor bias Vl *2 *2 * 6 *3 DC , C4 hi = » nr Vertical transfer clock equivalent circuit 501 0302303 ODObbZ'i Ö7S â


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    PDF ICX039BLA ICX039BLA ICX039ALA) 1/50s. 1/100s. 1/10000s. 000fc

    2002 - application circuits of ic 74121

    Abstract: 24v transformer a6s transistor simple proportional pulse stretcher analog fiber delay line cost of logic pulser pulse stretcher ns proportional pulse stretcher a2 signal conditioning amplifier pulse stretcher circuit
    Text: switching transistor Q3's supply voltage to the correct level. 00562706 TRACE VERTICAL HORIZONTAL , 7's in-circuit oscillator (A2) generates both the sampling pulse (A) and the switching transistor , (input of A7 sample-hold amplifier) and Trace D is A7's output. Trace E shows the filter's output at A8


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    1998 - application circuits of ic 74121

    Abstract: ic 74121 datasheet simple proportional pulse stretcher A7s transistor 24v transformer AN-266 DM74121 LF398 LH0082 74121 speed
    Text: transistor Q3's supply voltage to the correct level. couples, in the presence of common-mode noise or , 's in-circuit oscillator (A2) generates both the sampling pulse (A) and the switching transistor 's drive , transformer secondary (input of A7 sample-hold amplifier) and Trace D is A7's output. Trace E shows the


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    PDF LH0082 an005627 application circuits of ic 74121 ic 74121 datasheet simple proportional pulse stretcher A7s transistor 24v transformer AN-266 DM74121 LF398 74121 speed

    Not Available

    Abstract: No abstract text available
    Text: (OTA) can be viewed as an “ideal transistor.” Like a transistor , it has three terminals—a , Product Info: (800) 54X 132 © 1990 Burr-Brown Corporation ■17 313L S DDBVS'n Û7S ■PDS , . TRANSCONDUCTANCE (OTA) SECTION—AN OVERVIEW The symbol for the OTA section is similar to a transistor . Applications circuits for the OTA look and operate much like transistor circuits—the transistor , too, is a , aids the circuit optimization process. Many of the same intuitive techniques used with transistor


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    PDF OPA66O 850MHz OPA66O 17313b5 0Q57blfl ZZ182

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry , number of an SMD device from the package code can be a difficult task, involving combing through many , or equivalents and pinout information. How to use the SMD Codebook To identify a particular SMD , ' data and other sources of SMD device ID codes, pinout and leaded device equivalent information. The , example, a device specified as NPN 20V 0.1A 1W is a NPN transistor with a Vce (max) of 20V, maximum


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    PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
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