702 E
Abstract: IC 7432 D 431 6-PIN 907 transistor 7432
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP at 2 V, 20 mA • NE699M01 TOP VIEW LOW NOISE FIGURE: — NF =1.1 dB TYP at 2 GHz
|
OCR Scan
|
ne699m01ne687ot363ot-23+7ot-1024-hour702 eic 7432d 4316-pin 907transistor 7432
|
PDF
|
sl 0565 r
Abstract: 6621 sot-23 p 0368 mini
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP TOP VIEW • HIGH GAIN: 2.1 ± 0.1 IS 21 e |2 = 14 dB TYP a tf = 2 GHz, V ce = 2 V, Ic = 20 mA
|
OCR Scan
|
ne699m01ot-363ot-23sl 0565 r+26621 sot-23p 0368 mini
|
PDF
|
6621 sot-23
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01 NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 • HIGH fT: 16 GHz TYP TOP VIEW • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz, VCE = 2 V, Ic = 20 mA
|
Original
|
ne699m01ot-363ot-23ot143+924-hour6621 sot-23rf npn power transistor c 10-12 ghzis21ene699m01-t1s21e519 510sot-363 662transistor 5555
|
PDF
|
t z 1037 519
Abstract: 6621 sot-23 NE699M01
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 16 GHz TYP at 2 V, 20 mA TOP VIEW LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz 2.1 ± 0.1 -
|
OCR Scan
|
ne699m01ne687ot363t z 1037 519+16621 sot-23
|
PDF
|
IC 7432
Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6
Contextual Info: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz
|
Original
|
ne699m01ne687ot36324-hour+7ic 7432at 1004 s12ic 7432 power dissipationne699m01-t1s21eof ic 7432s12 sot 23-6
|
PDF
|
UPA827TF
Abstract: UPA833TF NE685 UPA814T
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01
|
OCR Scan
|
ne696m01ne698m01ne699m01upa806t+8upa807tupa808tupa809tupa814tne685ne686upa827tfupa833tf
|
PDF
|
2SK2396A
Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
Contextual Info: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The
|
Original
|
p10100ej6v0sg002sk2396anec 2sk2396ak2396a+6pc16582sc2407uaa 1006k2396k2597marking code saw mos transistor
|
PDF
|
UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
|
Original
|
d-40472i-20124i-00139d-30177+15gb-mk14d-81925s-18322f-78142e-28007uaa 1006manual* cygnus sl 5000transistor marking t79 ghzpc1658gnec ga fet marking code t79gaas fet t79pc1658mc-77122sc5431nec u71
|
PDF
|
uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
|
OCR Scan
|
upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
|
PDF
|
UPA827TF
Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T
|
OCR Scan
|
upa800tupa801tupa802tupa806t+15upa807tupa808tupa809tupa810tupa811tupa812tupa827tfupa833tfupa831tfsot 363175 sot363sot 153ne685dual sot363sot-363
|
PDF
|
