BLF6G22L-40BN |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G22L-40BN,112 |
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NXP Semiconductors
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BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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Original |
PDF
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BLF6G22L-40BN,118 |
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NXP Semiconductors
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BLF6G22L-40BN - Power LDMOS transistor, SOT1112A Package, Standard Marking, Reel Pack, SMD, 13" |
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Original |
PDF
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BLF6G22L-40P |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G22L-40P,112 |
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NXP Semiconductors
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BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack |
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Original |
PDF
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BLF6G22L-40P,118 |
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NXP Semiconductors
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BLF6G22L-40P - Power LDMOS transistor, SOT1121A Package, Standard Marking, Reel Pack, SMD, 13" |
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Original |
PDF
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BLF6G22LS-100 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB |
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Original |
PDF
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BLF6G22LS-100 |
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NXP Semiconductors
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF6G22LS-100,112 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B |
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Original |
PDF
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BLF6G22LS-100,118 |
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Ampleon USA
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.2DB SOT502B |
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Original |
PDF
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BLF6G22LS-100,112 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Blister pack |
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Original |
PDF
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BLF6G22LS-100,112 |
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NXP Semiconductors
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF6G22LS-100,118 |
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NXP Semiconductors
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Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 29 %; Frequency band: 2110 - 2170 GHz; Mode: W-CDMA / UMTS ; Output power: 25 W; Package material: SOT502B ; Power gain: 18.5 dB; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" |
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Original |
PDF
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BLF6G22LS-100,118 |
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NXP Semiconductors
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BLF6G22LS-100 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-2, FET RF Power |
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Original |
PDF
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BLF6G22LS-130 |
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NXP Semiconductors
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Power LDMOS transistor |
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Original |
PDF
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BLF6G22LS-130,112 |
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NXP Semiconductors
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Power LDMOS transistor; Package: SOT502B (LDMOST); Container: Blister pack |
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Original |
PDF
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BLF6G22LS-130,118 |
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NXP Semiconductors
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Power LDMOS transistor; Package: SOT502B (LDMOST); Container: Reel Pack, SMD, 13" |
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Original |
PDF
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BLF6G22LS-180PN,11 |
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NXP Semiconductors
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BLF6G22LS-180PN - Power LDMOS transistor, SOT539B Package, Standard Marking, Tube - DSC Bulk Pack |
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Original |
PDF
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BLF6G22LS-180PN:11 |
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NXP Semiconductors
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BLF6G22LS-180PN - Power LDMOS transistor, SOT539B Package, Standard Marking, Reel Pack, SMD |
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Original |
PDF
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BLF6G22LS-180RN,11 |
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NXP Semiconductors
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Power LDMOS transistor, SOT502B (LDMOST), Blister pack |
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Original |
PDF
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