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    cascode transistor array Datasheets

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    Part ECAD Model Manufacturer Description Download Buy
    BD9G102G-LB ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade) Visit ROHM Semiconductor
    BD9G341AEFJ ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET Visit ROHM Semiconductor
    BD9G101G ROHM Semiconductor Step-down Switching Regulators with Built-in Power MOSFET Visit ROHM Semiconductor
    BD9E104FJ ROHM Semiconductor 7.0 V to 26.0 V Input, 1 A Integrated MOSFET Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9A600MUV ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter Visit ROHM Semiconductor
    BD9G341AEFJ-LB ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade) Visit ROHM Semiconductor

    cascode transistor array Datasheets Context Search

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    differential pair cascode

    Abstract: piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array
    Text: D Arrays Transistor-continued Super- Beta Transistor Array Incorporates a Super-Beta Differential Cascode Amplifier Plus 3 Independent n-p-n Transistors © © € © © Q 96 (SH- OT©—  , each transistor Matched general-purpose transistors Differential Cascode Amplifier: Super-beta Op-Amp , Transistor Array CA3127 ©©©©©©©© 05 V / Q4 TOP VIEW 7X02 SUBSTRATE 7\03 Ò©©©©©© , Differential Cascode Amplifier: Two super-beta n-p-n transistors — hpjz 1000 Voltage limiting circuitrv


    OCR Scan     		PDF 92CS-20350 CA3095 100/XAdc CA3127 differential pair cascode piezoelectric transducer amplifier CA3095 cascode transistor array Super matched pair super beta transistor Transistor Array differential amplifier transistor Common Base amplifier common collector npn array npn 8 transistor array

    CA3095E

    Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
    Text: CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors , u tp u t section o f each cascode am plifier em ploys a conventional n-p-n transistor , Q3, Q4 , . Max. Units Characteristics A p p ly fo r Each Super-Beta Cascode A m p lifier Transistor Pair (Q , super-beta cascode pairs. Fig.7- h f £ vs. I q fo r each super-beta cascode a m p lifie r transistor p a , transistor p air (Q 1, 0 3 / and (0 2 , Q4). Fig. 19-E ft vs. f fo r each super-beta cascode a m p lifie


    OCR Scan     		PDF CA3095E 16-Lead 3095E 27--Bias CA3095E 28--Super-beta 30-High-input-im Fia32 34--CA309SE CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array

    Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    Abstract: No abstract text available
    Text: Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design , pager’s workhorse amplifier was simply a silicon bipolar junction transistor (BJT), which had no , components. In that era, field-effect transistor (FET) devices were far too expensive, and higher performing , discrete design. In our role as applications engineers, we support customers working on an endless array , amplifier (LNA) architecture was the cascode for the 450 MHz UHF and 929 to 932 MHz pagers. Using silicon


    Original     		PDF 1990s, Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

    2012 - 201934A

    Abstract: AAT2430A AAT2491 AAT2405 cascode transistor array aat2430 AAT2491IAN-T1 PN channel MOSFET 10A TVS 100V 300A AAT2430A-1
    Text: , Lateral TrenchDMOS Array Typical Characteristics (High Voltage Cascode MOSFET) Output Characteristics , TrenchDMOS Array Typical Characteristics (Low Voltage Cascode MOSFET) Source-Drain Diode Forward Voltage , integrate the transistor array . Lateral TrenchDMOS transistors exhibit hot carrier reliability superior , DATA SHEET AAT2491 Dual N-Channel HV Cascode-Clamp, Lateral TrenchDMOS Array General , TrenchDMOS array . The dual-channel AAT2491 monolithically integrates both current-sink (CS) and high-voltage


    Original     		PDF AAT2491 AAT2491 01934A 201934A AAT2430A AAT2405 cascode transistor array aat2430 AAT2491IAN-T1 PN channel MOSFET 10A TVS 100V 300A AAT2430A-1

    Q1/2N3055 RCA

    Abstract: No abstract text available
    Text: The circuit shown uses the ALD-1107, a monolithic matched P-channel quad transistor array , and as a , researchers, Hofstein and Heiman, developed the first working multitransistor MOS array IC (but not , , this included both bipolar discretes (like the famous 2N3055 power transistor ), CMOS microprocessor , device is used as the driver, while the P-channel transistor is used as its active load. The sensitive , , it actually contains several inherent parasitic elements, which include a bipolar transistor , a


    Original     		PDF 1960s 20VTH. ALD110802 Q1/2N3055 RCA

    2009 - TSMC 40nm

    Abstract: TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds
    Text: operation of transistor stacks in a typical analog design, such as the CMOS cascode current supply , Jose, CA 95134 Email: qxiang@altera.com Abstract Advancing field programmable gate array (FPGA , transistor scaling. Since 90 nm, FPGAs have used power-constrained scaling. The low-cost FPGA power budget , Logic Array Designers can also take advantage of the FPGA's advanced programmability to manage power , constraints High-Speed Logic Low-Power Logic Unused Low-Power Logic Logic Array Figure 6. FPGA


    Original     		PDF 40-nm TSMC 40nm TSMC 40nm layout issue cascode transistor array 90 nm CMOS Double high-speed switching diode EP4SE530 90-nm-FPGAs transistor gds

    JFET siced

    Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
    Text: discussed in this article. II. Device concepts 1. Insulated Gate Bipolar Transistor The Insulated Gate Bipolar Transistor (IGBT) combines the advantages of a MOS gate structure with the superior low conduction losses of bipolar transistors. The device comprises a DMOS like cell array situated , sustaining layer is characterised by the emitter efficiencies of backside emitter and top side cell array , transistor . Both device concepts show in the on state unipolar current flow. The topic of greatest concern


    Original     		PDF

    2011 - Large-Signal Characterization and Modeling of MOSFET for PA Applications

    Abstract: NONLINEAR MODEL LDMOS
    Text: , which is the bu uilding block for the cell array used in the final stage PA The cascode stage A , large-signal prediction for a transistor is discussed. It is demonstrated that an accurate modeling of Gm as a function of bias, as well as other important extrinsic transistor parameters, enables proper prediction of the 1-tone distortion behavior for a transistor , which in turn determines the quality of , While providing insight on the sensitivity of each nonlinear component within a transistor to the


    Original     		PDF RTUIF-28 inter-m2004 Large-Signal Characterization and Modeling of MOSFET for PA Applications NONLINEAR MODEL LDMOS

    2006 - cascode transistor array

    Abstract: NTE917
    Text: NTE917 Integrated Circuit Dual, Independent Transistor Array , Differential Amp Description: The , Amplifiers (Differential and/or Cascode ) D Product Detectors D Doubly Balanced Modulators and Demodulators , Mixers D Synthesizer Mixers D Balanced (Push-Pull) Cascode Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor . . . . . . . . . . . , . . . . . +265°C The following ratings apply for each transistor in the device: Collector-Emitter


    Original     		PDF NTE917 NTE917 300MHz. 120MHz. 004-j0 100MHz cascode transistor array

    1993 - CA3054

    Abstract: cascode transistor array CA3054M CA3054M96
    Text: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent , /Mixer/Oscillator; Converter/IF · IF Amplifiers (Differential and/or Cascode ) Ordering Information , · Balanced (Push-Pull) Cascode Amplifiers Pinout CA3054 (PDIP, SOIC) TOP VIEW 1 2 14 , . . . . . . . . . . 50mA Power Dissipation Any One Transistor . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . +300oC NOTE: 1. The collector of each transistor of the CA3054 is


    Original     		PDF CA3054 120MHz CA3054 300MHz. 120MHz. cascode transistor array CA3054M CA3054M96

    rca 2n3375

    Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
    Text: V r = - 2 V V? m High-Gain Transistor Array RCA-CA3036 $ .89(?wead TO-5) dual , plus inverter and RCA-CD4007D, quad transistor array plus inverter and one each of RCA-CD4001D, quad , RCA-CA3006 $3.50 yz-iead i u-o) ■sharp lim iting ■20 dB (typ) cascode power gain @ 100 MHz Vcc , .89 j8 d 0^ DC Amplifier RCA-CA3028B $1.25 (8-|e*d I U-O) ■20 dB (typ) cascode power , / Cascode Amplifier RCA-CA3053 $ .49 ■30 dB (typ) diff. voltage gain @ 10.7 MHz Linear


    OCR Scan     		PDF 000-Series 2N1492 RCA-CA3000 RFT-700E/2L 1076R5 rca 2n3375 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor

    AMD 685

    Abstract: cascode transistor array 5K02 tiles ecl 10K signetics FB300 FB324
    Text: ■-■^«■1 FB324 Tile Array High Performance Tile Low Noise, High Speed NPN Transistor High , Micro Linear FB300 Tile Arrav Family Il'-//-'-' FB324 BIPOLAR TILE ARRAY Description The , noise MLCH300 transistor . This transistor achieves this increase in performance because of it's lower , reference exist on the chip. FB324 Bipolar Tile Array ■16 High Performance Tiles for macrocell or component level design ■Low noise, High speed NPN transistor with low base resistance ■High speed


    OCR Scan     		PDF FB300 FB324 FB324 MLCH300 GG/CS-5K-02/88 AMD 685 cascode transistor array 5K02 tiles ecl 10K signetics

    Not Available

    Abstract: No abstract text available
    Text: analog design FB324 Tile Array Low Noise, High Speed NPN Transistor High Performance Tile Macrocells MLCH340 Cascode Amplifier — programmable gain up to 20 — can be directly cascaded — 3 dB , % Micro Linear FB300 Tile Arrav Family Description FB324 Bipolar Tile Array The FB324 has , speed, low noise MLCH300 transistor . This transistor achieves this increase in performance because of , component level design ■Low noise, High speed NPN transistor with low base resistance ■High speed


    OCR Scan     		PDF FB300 FB324 FB324â MLCH300

    2004 - cascode mosfet switching

    Abstract: TL1451 Application note TL1451 pwm controller cascode TL1451 SLUA315 Drive Base BJT mosfet amplifer circuit
    Text: count, system cost and PCB space. 1 The Cascode The theory of the cascode transistor is quite , increased protection to the smaller control transistor . A typical NPN cascode pair is shown in Figure 1. V , . An NPN Transistor With Cascode In Figure 1, Q1 is controlled by the pulse train fed into its base. When Q1 turns ON it sinks IQ1 from the emitter of the cascode transistor Qc. If VIN is sufficient to , fairly small, low voltage transistor to control a system with a very high VIN voltage. 2 A Cascode


    Original     		PDF SLUA315 TL1451 TL1451 cascode mosfet switching TL1451 Application note TL1451 pwm controller cascode Drive Base BJT mosfet amplifer circuit

    2n3906 equivalent transistor

    Abstract: 2N3906 PNP bipolar junction transistor EP2015CN 2N3906 EP2015ACN EP2015CM MPQ3906 TPQ3906 current mirror cascode NPN pnp MATCHED PAIRS array
    Text: transistor array , see Elantec's EN2016 family data sheet. Elantec facilities comply with MIL-I-45208A and , Cascode Current Source is a basic current mirror with a common base transistor in the collector. This , Array Features • Four independent fast PNP's • 350 MHz ft • Tight Vjje matching—1 mV â , tracking • High Hfe—150 minimum • 40V minimum BVceo • Each transistor similar to 2N3906 • Pin , MDP0027 General Description The EP2015 family are quad monolithic vertical PNP transistor arrays which


    OCR Scan     		PDF EP2015C/EP2015AC 2N3906 TPQ3906 MPQ3906 EP2015CN MDP0031 EP2015ACN MDP003Ã EP2015CM 20-Lead 2n3906 equivalent transistor 2N3906 PNP bipolar junction transistor 2N3906 MPQ3906 current mirror cascode NPN pnp MATCHED PAIRS array

    Not Available

    Abstract: No abstract text available
    Text: CA3054 ff) H A R R IS S E M I C O N D U C T O R Mrc 1993 ah Transistor Array - Dual , ; Converter/IF • IF Amplifiers (Differential and/or Cascode ) • Product Detectors • Doubly Balanced , Mixers * Denotes Tape and Reel • Balanced (Push-Pull) Cascode Amplifiers Pinout CA3054 (PDIP , .50mA Power Dissipation Any One Transistor , ° C NOTE: 1. The collector of each transistor of the CA3054 is isolated from the substrate by an


    OCR Scan     		PDF CA3054 120MHz CA3054 300MHz. 120MHz.

    CA3054

    Abstract: No abstract text available
    Text: V HARRIS S E M I C O N D U C T O R ( * A 'ìf ìR A Transistor Array - Dual Independent , Amplifiers (Differential and/or Cascode ) · Product Detectors · Doubly Balanced Modulators and Demodulators · , Synthesizer Mixers · Balanced (Push-Pull) Cascode Amplifiers ' Ordering Information PART NUMBER CA3054 , Dissipation Any One Transistor . 300mW Total Package , collector of each transistor of the CA3054 is isolated from the substrate by an integral diode. The


    OCR Scan     		PDF 120MHz CA3054 300MHz. 120MHz. CA3054

    pnp phototransistor

    Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
    Text: , This configuration is duality of the cascode topology in figure 3.0. An NPN transistor , 2N4400, is , VS. Forward Current (IF) for cascode configuration using PNP transistor for active high Improved , output, the Cascode topology using an additional NPN transistor is shown here. Figure 4A: Current Transfere Ratio (CTR), Tr and Tf VS. Forward Current (IF) for cascode configuration using NPN transistor , collector and cascode : Note that all of the above is dependent on the optocoupler, the transistor chosen


    Original     		PDF AN3009 pnp phototransistor transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A

    647 transistor

    Abstract: TA6206 cascode transistor array
    Text: Transistor Array Description .>1GHz The CA3127* consists of five general purpose silicon , Dissipation, PD Any One Transistor . 85mW Total , .Derate Linearly at 6.67mW/°C The following ratings apply for each transistor in the device , SPECIFICATIONS (For Each Transistor ) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage , VCE = 6V, 1= 10MHz, Rl = 1kfi, lc = 1mA Cascode Configuration f = 100MHz, V+ = 12V, lc = 1mA


    OCR Scan     		PDF 1A1197 CA3127* CA3127 500MHz. CA3127 100MHz 647 transistor TA6206 cascode transistor array

    Not Available

    Abstract: No abstract text available
    Text: ® HARRIS S E M I C O N D U C T O R CA3127 High Frequency N-P-N Transistor Array Description , , PD Any One Transistor . 85mW Total , transistor in tfie device Colleclor-to-Emitter Voltage, VCEo , SPECIFICATIONS (For Each Transistor ) Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage , = 1MHz VBg = 4V, f = 1MHz VCE = 6V, f = 10MHz, Rl = 1kn, lc = 1mA Cascode Configuration f = 100MHz


    OCR Scan     		PDF CA3127 CA3127* CA3127 500MHz. TA6206. 100MHz

    CA3127

    Abstract: TRANSISTOR 100MHz zener y21 CA3127E
    Text: Transistor Array Description The CA3127 consists of five general purpose silicon NPN transistors on a com m , for each transistor in the device Collsctor-to-Emitter Voltage, VCE0 , , PD (Any One Transistor ) 85mW Maximum Junction Temperature (D ie ). 1 , is n ot im plied NOTES'. 1. The collector of each transistor of the CA3127 is isolated from the , the external circuit to maintain isolation between transistors and to provide for normal transistor


    OCR Scan     		PDF CA3127 CA3127 500MHz. TRANSISTOR 100MHz zener y21 CA3127E

    1999 - AN5337 ca3028

    Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
    Text: amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The , constant-current source that has AGC capability, a cascode amplifier with constant-impedance or conventional AGC capability, a converter, a mixer, and an oscillator. The cascode mode of operation is recommended for , one transistor , in this case Q1, through terminal 1. The base of the second transistor , R1 5k , AND AGC CAPABILITY; (B) A CASCODE AMPLIFIER WITH A CONSTANTIMPEDANCE AGC CAPABILITY; (C) A CASCODE


    Original     		PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22

    RCA-CA3127

    Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
    Text: Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features: ■Gain-bandwidth , of CA3127. MAXIMUM RATINGS, Absolute-Maximum Values: POWER DISSIPATION, PD: Any one transistor , apply for each transistor In the device: Collector-to-Emitter Voltage, VCEo , . 20 mA "The collector of each transistor ot the CA3127 is isolated from the substrate by an integral , to maintain isolation between transistors and to provide for normal transistor action. File Number


    OCR Scan     		PDF DQ14t43 CA3127 RCA-CA3127* CA3127 100-MHz RCA-CA3127 rca 0190 transistor iY22 rca 0190 6 "transistor arrays" ic currentmirror

    CA3127E

    Abstract: No abstract text available
    Text: CA3127 Semiconductor High Frequency NPN Transistor Array August 1996 Features , for each transistor in the device C ollector-to-Em itter Voltage, VCEO , is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the , transistor action. °J A is m easured with the com ponent m ounted on an evaluation PC board in free air , DC CH ARA CTERISTICS (For Each Transistor ) lc = 10nA, lE = 0 20 32 - V


    OCR Scan     		PDF CA3127 CA3127 500MHz. CA3127E

    1998 - BFC505

    Abstract: MBG20 IC vco 900 1800 mhz MGG216
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFC505 NPN wideband cascode transistor Product , Philips Semiconductors Product specification NPN wideband cascode transistor BFC505 FEATURES , soldering point 2 Philips Semiconductors Product specification NPN wideband cascode transistor , 08 3 Philips Semiconductors Product specification NPN wideband cascode transistor , NPN wideband cascode transistor BFC505 Notes 1. VB2 = VC2-E1/2 + 0.6 V 2 2 2 1 + s 11 × s


    Original     		PDF BFC505 OT353 BFC505 MBG20 IC vco 900 1800 mhz MGG216
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