2SC5179
Abstract: 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630 NE68633 S21E transistor nec cel
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639r2sc51792sc5180+72sc5181ne68618ne68619ne68630ne68633s21etransistor nec cel
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84t MARKING
Abstract: marking 83T transistor marking 68t NE68139R NE68739R marking 84t marking 28R 1817 transistor NE68539R NE68039R
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 39R +0.2 2.8 -0.3 +0.10 0.6 -0.05 +0.2 1.5 -0.1 3 2 0.85 1.8 2.9 ± 0.2 0.95 1 1.1+0.2 -0.1 4 +0.10 0.4 -0.05 LEADS 1, 3, 4 0.16 +0.10
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ne68039rne68139rne68539rne68639r+9ne68739rne68839rne85639r84t markingmarking 83ttransistor marking 68tmarking 84tmarking 28r1817 transistor
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2SC5181
Abstract: 2SC5179 2SC5180 NE686 NE68618 NE68619 NE68630 S21E UPA807T 73300
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ne68618-t1ne68619-t1ne68630-t1+13ne68633-t1ne68639-t1ne68639r-t124-hour2sc51812sc51792sc5180ne68618ne68619ne68630s21eupa807t73300
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NE68018
Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10
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PJ 0349
Abstract: CD 888 CB pj 0266 iv PJ 0399 pj 1126 1V nt 9989 pj 1126 SIC SOT343 IC HS 8108 pj 0159
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES HIGH GAIN BANDW IDTH PRO DUCT: fT o f 15 G H z LOW VO LTAG E/LO W CU R R EN T OPERATION HIGH INSERTION POW ER GAIN: |S 21 E|2 = 12 dB @ 2 V , 7 m A , 2 G H z |S 2 1 E |2 = 11 d B @ 1 V, 5 mA, 2 G H z
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ne686ot-143ne68618-t1ne68619-t1+14ne68630-t1ne68633-t1ne68639-t1ne68639r-t1pj 0349cd 888 cbpj 0266 ivpj 0399pj 1126 1vnt 9989pj 1126sic sot343ic hs 8108pj 0159
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marking 269-3 sot23
Abstract: NE68618-T1-A IC ua 741 T 0599
Contextual Info: SILICON TRANSISTOR NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne6868639rne68618-t1-ane68619-t1-a+7ne68630-t1ne68633-t1ne68639-t1ne68639r-t1marking 269-3 sot23ic ua 741t 0599
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NE68019
Abstract: NE68839 NE68018 NE68719
Contextual Info: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications - ” „ ft. -.H r* VCE lc TYP V (m A) (dB) •Wf, ,-fc « &€ MAX SOT-343 STYLE 4 PIN SUPER MINI MOLD NE68018 1.0 1 1 1.5 12.0 1.0 1 12.5 10.0 100 35 320 NE68118 1.0 2.5 3
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cd 1691 cp
Abstract: cp 8888 sj 6344 cP8888 nt 9989 1691 AI bt 67600
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|Z = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ot-143ne68618-t1ne68619-t1+10ne68630-t1ne68633-t1ne68639-t1cd 1691 cpcp 8888sj 6344cp8888nt 99891691 aibt 67600
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sot 326
Abstract: 338 sot-23 NE68530 NE02139
Contextual Info: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100
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20323
Abstract: marking 269-3 sot23 S21E 2SC5179 2SC5180 2SC5181 NE686 NE68618 NE68619 NE68630
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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uPA63
Abstract: UPA827TF UPA831TF NE685
Contextual Info: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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upa800tupa801tupa802tupa806t+10upa807tupa808tupa809tura810tupa811tupa812tupa63upa827tfupa831tfne685
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marking 269-3 sot23
Abstract: NE68618 SOT-143 MARKING 557 2SC5179 2SC5180 2SC5181 NE686 NE68619 NE68630 NE68633
Contextual Info: NE686 SERIES SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz
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ne686ne68618-t1ne68619-t1ne68630-t1+13ne68633-t1ne68639-t1ne68639r-t124-hourmarking 269-3 sot23ne68618sot-143 marking 5572sc51792sc51802sc5181ne68619ne68630ne68633
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ne666
Abstract: 21421 Series ic 74600 NE686
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fTof 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21EI2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 = 11 dB @ 1 V, 5 mA, 2 GHz
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is21ei2ne686ot-143ne68618-t1+5ne68619-t1ne68630-t1ne66621421 seriesic 74600
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tt 18934
Abstract: 30i sot23 5140 SN 74500
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z
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