B4E7414 Search Results

NE32700

Abstract: NE46734 NE32702 NE32708 NE32740A NE32740B NE46700 NE68039 NE94430
Contextual Info: N E C / CALIFORNIA SbE D • b4E7414 DD0ES33 374 M N E C C Additional Small Signal Silicon Bipolar Products E LE C T R IC A L CH ARACTERISTICS PAR T N UM BER PACKAGE CODE VCEO V (mA) Pt (W) NE32700 NE32702 NE32708 NE32740A NE32740B CHIP 02 08 40A 40B 12

NE202

Abstract: NE20300 NE20383A
Contextual Info: E C/ C A L I F O R N I A NEC 1SE D b4E7414 ODOISTT 1 NE20300 NE20383A ULTRA LOW NOISE Ku-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES • L O W N O IS E F IG U R E 1.25 d B T Y P at f = 12 G H z NE20300 CHIP (Units in pm) • H IG H A S S O C IA T E D GAIN

PC1675G

Abstract: 1675P
Contextual Info: 103 b4E7414 G002b4b 5 bE D E C/ CALIFORNIA NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE D IM ENSIO N S FEA TU RES Units in mm O UTLINE 39 (SOT-143) • W ID E BA N D W ID T H : 1900 MHz T Y P at 3 d B Point for UPC1675G

4H74

Abstract: NE68337 S21E
Contextual Info: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS

nec d 588

Abstract: UPC1677C UPC1677 UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586
Contextual Info: E C/ CALIFORNIA SbE D b427414 DDDSbSM TÒT * N E C C NEC UPC1677B UPC1677C UPC1677P 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER =T-1H-6-Ol OUTUNE DIMENSIONS FEATURES • HIGH POWER OUTPUT + 1 9 .5 d B m Units in mm O U T U N E B08 • EXCELLENT FREQUENCY RESPONSE:

2SC2037

Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
Contextual Info: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable

2SK281

Abstract: 203l2 NE218 NE21889 NE21800
Contextual Info: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

20PM4

Abstract: NE985100 NE985200 NE985400
Contextual Info: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)

881-1 nec

Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S

2SC1365

Abstract: 2SC1252 NE741 NE74113 2SC*1365 NE74100 NE74114
Contextual Info: N E C / C A L IF O R N I A Sb E NEC D b4S74m ÜGQ547Ö b S l H N E C C NE74100 NE74113 NE74114 NPN MEDIUM POWER UHF-VHF TRANSISTOR T *^ "3 > -0 £ > OUTLINE DIMENSIONS FEATURES Unita In mm NE74100 (CHIP) • H IG H GAIN BAN DW IDTH P R O D U C T : fr = 1.7 GHz

2SC2150

Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
Contextual Info: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use

2SK281

Abstract: sl2109
Contextual Info: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure

2SC3538

Abstract: 2SC3539 2SC3537 B-28 NEM0900 NEM092081B-28 NEM094081B-28 NEM096081B-28 B2-8
Contextual Info: E C/ CALIFORNIA SbE D • b45?414 QOQSSbS e]fl4 INECC " ' v i s NEM092081B-28 NEM094081B-28 NEM096081B-28 CLASS C, 900 MHz, 28 VOLT POWER TRANSISTOR FEATURES r o OUTLINE DIMENSIONS Units in mm • HIGH P O W E R OUTLINE 81B • H IG H GAIN • TITAN IU M /PLA TIN U M /G O LD M ETALLIZATIO N

UPC1670C

Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
Contextual Info: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1

impatt diode

Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Contextual Info: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz

2SK609

Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
Contextual Info: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ­ ated gain thru K-band by employing a recessed 0.3 micron

Contextual Info: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S

UPC1678B

Abstract: UPC1678
Contextual Info: N E C / C A L IF O R N IA 5bE D L427414 000Eb5cJ 5bl H N E C C NEC UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER ; " T - iq - r 3 , - o i FEATURES UPC1678B/P INSERTION GAIN vs. FREQUENCY • HIGH OUTPUT POWER: +18 dBm Vcc = 5 V

5E DIODE

Abstract: ND5051-3A ND5051-5E L427 microwave sensors RF Microwave schottky Diode mixer ND5051-3G noise diode
Contextual Info: NEC N E C / CALIFORNIA 15E D • b427414 OOOl'ilM 5 ■ X TO K-BAND G aAs SCHOTTKY BARRIER MIXER DIODE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B T Y P at f = 10 G H z SYM BO LS U N IT S R A T IN G S

2SK280

Abstract: NE13783 NE13700 NE13783-4 NE13783S RF MESFET S parameters
Contextual Info: L N E C / 1SE D CALIFORNIA NEC • b427414 Q0G1SÖS 7^3h l S 1 LOW NOISE Ku-BAND G aAs MESFET NE13700 NE13783 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fMAx: 80 G H z The NE137 features low noise figure and high associated gain • L O W N O IS E F IG U R E