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Contextual Info: SILICON MMIC NEC UPC1677B/C PRELIMINARY 1.7 GHz Medium Power Wide-Band Amplifier FEATURES PHYSICAL DIMENSIONS • H IG H P O W E R O U T P U T : + 19.5 dBm Units in mm UPC1677B • EXCELLENT FR E Q U E N C Y RESPONSE: 1 27 ± 0 1 1.27±0 1 1.7GHz TYP at 3 dB Down
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upc1677b/cupc1677bupc1677upc1677c |
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nec d 588
Abstract: UPC1677C UPC1677 UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586
Contextual Info: E C/ CALIFORNIA SbE D b427414 DDDSbSM TÒT * N E C C NEC UPC1677B UPC1677C UPC1677P 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER =T-1H-6-Ol OUTUNE DIMENSIONS FEATURES • HIGH POWER OUTPUT + 1 9 .5 d B m Units in mm O U T U N E B08 • EXCELLENT FREQUENCY RESPONSE:
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b4274140002b54upc1677upc1677b+8upc1677cupc1677ppara5-89b4e7414d002bs6nec d 5888-lead 3.gnd dip 7.vccnec d 586
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UPC1677C
Abstract: UPC1677B
Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C upci677c - NOISE FIGURE AND GAIN V » . FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT:+19.5 dBm
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upc1677bupc1677cupci677cupc1677 |
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UPC1677
Abstract: UPC1677B
Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B* *For Hi-Rel Applications Only INSERTION GAIN vs. FREQUENCY VCC = 5 V • HIGH POWER OUTPUT: +19.5 dBm 40 30 • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down Gain,GS dB 20
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upc1677bupc167724-hour |
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upc 577
Abstract: 1677c
Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES_ UPC1677B UPC1677C UPC1677C NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE • HIGH POWER OUTPUT: +19.5 dBm • EXCELLENT FREQUENCY RESPONSE: 1.7 G Hz Typ at 3 dB Down • HIGH POWER GAIN: 24 dB Typ at 500 MHz
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upc1677bupc1677c1677cstringe30+1upc 577
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Contextual Info: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER UPC1677B UPC1677C OUTLINE DIMENSIONS FEATURES • H IG H POW ER O UTPUT: + 19.5 dBm Units in mm OUTLINE B08 • EXCELLENT FREQ UENC Y RESPONSE: 1.27±0.1 1.27+0,1 1.7GHz TYP at 3 dB Down (LEADS 2,4,6.8) 0.6
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upc1677bupc1677cupc1677 |
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UPC1
Abstract: UPC1677 UPC1677B UPC1677C 8-lead 3.gnd dip 7.vcc 677c
Contextual Info: NEC 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER FEATURES UPC1677B UPC1677C OUTLINE DIM ENSIONS • HIGH POWER OUTPUT: +19.5 dBm Units in mm O UTLINE B08 • EXCELLENT FREQUENCY RESPONSE: 1.7GHz TYP at 3 dB Down 1.27±0.1 1.27±0.1 (LEADS 2,4,6.8) 0.6
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upc1677bupc1677cupc1677upc1+28-lead 3.gnd dip 7.vcc677c
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SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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an83301-1ne24615an83302an83303-1+16ne71083ne70083an83901an8530111/86-lnan86104svi 3104 cupc1678gne333stb 1277 transistor equivalenttransistor bf 175ne85635 packaging schematicne72000 vcsvi 3104ne9000ne720
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transistor t06
Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX
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transistor t06t06 transistortransistor t06 192sc 930 af+5t06 93upc1678blt 5219upc8103tupc8108t
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mmic a08
Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
Contextual Info: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18
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mmic a08t06 transistortransistor t06b584b+6b585b544 mmicupc1675mmic prescaler divide by 64upc1668bupc1678b
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UPC2712B
Abstract: UPB1509B upc2709b NE85608-L NE68108 NE73408 UPB1508B NE85608 NE41607 NE02103
Contextual Info: G E T -3 0 6 9 8 Rev.F Specification Control D raw ing G rade L Devices For S p ace Application = H i-R e l P rep ared on NEC Com pound S ilic o n D ev ic e = : D ec e m b er 1 6 , 2 0 0 2 S e m ic o n d u c to r D evices, Ltd. 1 /3 7 G E T -3 0 6 9 8 Rev.E
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get-30698ne89400upb584b10cycies+15page31ne02100page35/37upc1677p1678pupc2712bupb1509bupc2709bne85608-lne68108ne73408upb1508bne85608ne41607ne02103
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C1678
Abstract: c1677 UPC1678B UPG100B uPG101 MARKING 106 UPG101B G100 G101 G103
Contextual Info: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. B08 1.27±0.1 1.27±0.1 LEADS 2, 4, 6, 8 0.6 0.4 (LEADS 1, 3, 5, 7) 4 3 2 MARKING 10.6 MAX 1 5 3.8±0.2 6 7 8 3.8±0.2 10.6 MAX 1.7 MAX
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upc1677bc1677upc1678bc1678+9upg100bupg101bupg103b24-hourupg101marking 106g100g101g103
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Contextual Info: 1.7 GHz MEDIUM POWER BROADBAND SILICON M M IC AMPLIFIER upG1677C UpG1677p UPC1677C INSERTION GAIN vs. FREQUENCY FEATURES_ • HIGH POWER OUTPUT: +19.5 dBm V C C -5 V • EXCELLENT FREQUENCY RESPONSE: 1.7 GHz TYP at 3 dB Down 40 30 • HIGH POWER GAIN: 24 dBtyp at 0.5 GHz
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upg1677cupg1677pupc1677cupc1677+2upc1677bupc1677p
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